BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
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BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
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MMBF4856
Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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226AA)
226AE)
MMSD1000T1
236AB
MMBF0201NLT1
MMBF0202PLT1
MMBF4856
pin configuration NPN transistor BC547 sot-23
BC337/BC327
BC547 sot package sot-23
t6661
bipolar transistor bc107
MPS6595
zt751
FET Transistor Guide
BS107 MOTOROLA
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7803 3V 1A positive voltage regulator
Abstract: 20 qfn 3x3 datasheet for 4x4 keyboard F QFN 3X3 LTC3452 LTC3524 QFN-56 5x9 50w LED driver sw 2604 ic ic sw 2604
Text: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/24/08 3:43:50 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.
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1-800-4-LINEAR
LW100815KU
7803 3V 1A positive voltage regulator
20 qfn 3x3
datasheet for 4x4 keyboard
F QFN 3X3
LTC3452
LTC3524
QFN-56 5x9
50w LED driver
sw 2604 ic
ic sw 2604
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7803 3V 1A positive voltage regulator
Abstract: 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755
Text: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/21/08 12:52:45 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.
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1-800-4-LINEAR
LW100815KU
7803 3V 1A positive voltage regulator
4x5 led display
12V, 350mA LED driver
LT3476
LTC3454
sw 2604 ic
datasheet for 4x4 keyboard
03 07 qfn 3x3
F QFN 3X3
LT3755
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68W SOT
Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua
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B132-H7456-GI-X-7600
68W SOT
ultra low noise 12GHz
64W SOT23
AUs SOT363
BAS 40-04 Infineon
BAS 68-04
BAT 43 - 46 - 85 - 86
61 SIEMENS
DIODE BAT 19
SOT143 DUAL DIODE
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1N4938
Abstract: No abstract text available
Text: ¡•i" - v - v . 11 7cî'1û3 00D0357 M I 30E D B K C INTERNATIONAL s ¡r n~'03-0°i BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01B41 TE L NO. 508 6 8 1- 03 92 TYPE 1N4938 (SILICON DIODE) AB SO L U T E MA XI MU M RA TI NG S PEAK RE VE RS E VO LTABE
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T-03-DÂ
1N4938
250mW
100mA
DO-35
1N4938
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BDC08
Abstract: BDC06 MPSW92
Text: MOT ORCL A SC XSTRS/R F ISE D I t3b?aSM OOñS^lb T |T - BDC06 BDC08 CA SE 29-03, STYLE 14 TO-92 TO-226AE M A X IM U M RATINGS U nit Sym bol BDC 06 BDC 08 Collector-Emitter Voltage VCEO 300 250 Vdc Collector-Base Voltage VcBO 300 250 Vdc Em itter-Base Voltage
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BDC06
BDC08
O-226AE)
BDC08
MPSW92
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tic 223
Abstract: liA SOT23 7S1B-03
Text: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose
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O-236AB)
OT-23
318E-04
O-261AA)
OT-223
O-116)
7S1B-03
SO-16
O-116
OT-23,
tic 223
liA SOT23
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tic 2160
Abstract: BDC07 BDC05 MPSW42
Text: MO T OR OL A SC 12E D I fc.3b?aSM 0005115 ñ | X S TR S/ R F BDC05 BDC07 CASE 29-03, STYLE 14 TO-92 TO-226AE M AXIM UM RATINGS R atin g S ym b ol BDC 05 BDC 07 U n it C ollector-E m itter Voltage VCEO 3 00 250 Vdc Collector-Base Voltage VCBO 3 00 250 Vdc
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BDC05
BDC07
tic 2160
MPSW42
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F930
Abstract: T12P MPF960 F990
Text: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain
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MPF930*
MPF960*
MPF990*
MPF930
MPF960
MPF990
O-226AE)
MPF930,
MPF960,
F930
T12P
F990
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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ML4000
Abstract: diodes chart ML40150 ML4923 ML40019
Text: M an AMP com pany Space Qualified Diodes ML4000 Series V2.00 GaAs Gunn Diodes Minimum Output Power Po mW Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 18.0 22.0 27.0 32.0 40.0 50.0 90.0 to to to to to to to to 18.0GHz 22.0GHz 27.0GHz 32.0GHz 40.0GHz 50.0GHz
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ML4000
ML4901
ML4910
ML4903
ML4911
ML4905
ML4921
ML4931
ML4941
ML4951
diodes chart
ML40150
ML4923
ML40019
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RG4 DIODE
Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
Text: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,
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1N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
711002b
RG4 DIODE
MCB843
b35 DIODE schottky
marking JB SCHOTTKY BARRIER DIODE
IEC134
MCB841
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T74LS90
Abstract: modulo-12 T74LSXX
Text: SGS-THOMSON IQÂÏÏMSOtgS T74LS90 T74LS92/93 COUNTERS: LS90 DECADE LS92 DIVIDE BY TWELVE LS93 4-BIT BINARY • LOW POWER CONSUMPTION TYPICALLY 45 mW ■ HIGH COUNT RATES TYP 50 MHz ■ CHOICE OF COUNTING MODES BCD, BI-QUINARY. DIVIDE-BY-TWELVE BINARY ■ INPUT CLAMP DIODES LIMIT HIGH SPEED
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T74LS90
T74LS92/93
T74LSXX
T74LS90/92/93
ILS90)
modulo-12
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2SK1818-MR
Abstract: No abstract text available
Text: 2SK1818-MR FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-Y SERIES I Features • O utline Draw ings Include fast recovery diode >Hign voltage Low driving power I A pp licatio n s Motor controllers Inverters Chcppors I Max. Ratings and Characteristics
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2SK1818-MR
SC-67
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BK 300 MI
Abstract: WTVA KO-48 ESAC63-004 H125
Text: ESAC63-004 2 oa i'a y h ï- 'O J T m — K SC H O T T K Y B A R R IER DIODE m n & : Features • f&vF Low Vp Super high speed switching. m m & n Connection Diagram High reliability by planer design, : Applications High speed power switching. M aximum Ratings and Characteristics
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O-22QAB
SC-46
500ns,
BK 300 MI
WTVA
KO-48
ESAC63-004
H125
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Untitled
Abstract: No abstract text available
Text: ESAC63-004 2 oa : O utline D raw ings >a - y h * - ' < V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features JEDEC T0-220AB Low Vp EIAJ SC-46 T.'tvT's'f a e - K ^ n t i - a s i ' Super high speed switching. m m &m •1 & V F • Connection Diagram
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ESAC63-004
T0-220AB
SC-46
500ns,
l95t/R
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OA 10 diode
Abstract: No abstract text available
Text: ESA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE • 4 $ a : Features • teV F Low VF Super high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications High speed pow er sw itch in g . ■ Æ t& fc & te : Maxim um Ratings and Characteristics
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500ns,
I95t/R89)
OA 10 diode
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Untitled
Abstract: No abstract text available
Text: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PC30UD
O-247AC
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ESAC85-009
Abstract: No abstract text available
Text: E SA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE I 4 $ A : Features te V F Low VF S uper high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications 'M&ni3X4'y*>9 H igh speed pow er sw itch in g . Maximum Ratings and Characteristics
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ESAC85-009
T0-220AB
SC-46
500ns,
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D 92 M - 03 DIODE
Abstract: No abstract text available
Text: F 1 H 5 B - 6 1 5 Q a * ± y =e ^ = l - ) v _ FAST RECOVERY DIODE MODULE : Features Short Reverse Recovery Time • tS IM S lV ft* • Variety of Connection Menu Insulated Type • fflJ i! I A pplications Arc-W elders • 7 l) —Tfr'i —Ji»y4
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1FI150B-060050A)
50/60Hz
l95t/R89
D 92 M - 03 DIODE
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Untitled
Abstract: No abstract text available
Text: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current
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7E50533
ZC2800Er
ZC2810E
ZC2811E
ZC5800E
ZC2800E
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ae9t
Abstract: M1011 T460 T760 TP802C09 A2D0.1 a456
Text: TP802C09 ioa SCHO TTKY B A R R IER DIODE ’ Features • 1&VF Low V p Connection Diagram Super high speed switching. High reliability by planer design I Applications High speed power switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings
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TP802C09
500ns,
l95t/R89
ae9t
M1011
T460
T760
A2D0.1
a456
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