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    D 92 M 03 DIODE Search Results

    D 92 M 03 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    D 92 M 03 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    BC547 sot package sot-23

    Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC5001T1 MDC3105LT1 BC547 sot package sot-23 BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package

    MMBF4856

    Abstract: pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF 226AA) 226AE) MMSD1000T1 236AB MMBF0201NLT1 MMBF0202PLT1 MMBF4856 pin configuration NPN transistor BC547 sot-23 BC337/BC327 BC547 sot package sot-23 t6661 bipolar transistor bc107 MPS6595 zt751 FET Transistor Guide BS107 MOTOROLA

    7803 3V 1A positive voltage regulator

    Abstract: 20 qfn 3x3 datasheet for 4x4 keyboard F QFN 3X3 LTC3452 LTC3524 QFN-56 5x9 50w LED driver sw 2604 ic ic sw 2604
    Text: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/24/08 3:43:50 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.


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    PDF 1-800-4-LINEAR LW100815KU 7803 3V 1A positive voltage regulator 20 qfn 3x3 datasheet for 4x4 keyboard F QFN 3X3 LTC3452 LTC3524 QFN-56 5x9 50w LED driver sw 2604 ic ic sw 2604

    7803 3V 1A positive voltage regulator

    Abstract: 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755
    Text: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/21/08 12:52:45 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.


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    PDF 1-800-4-LINEAR LW100815KU 7803 3V 1A positive voltage regulator 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755

    68W SOT

    Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
    Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua


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    PDF B132-H7456-GI-X-7600 68W SOT ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE

    1N4938

    Abstract: No abstract text available
    Text: ¡•i" - v - v . 11 7cî'1û3 00D0357 M I 30E D B K C INTERNATIONAL s ¡r n~'03-0°i BKC IN TE RNATIONAL ELECTRONICS, INC. 6 LAKE STREET, LAWRENCE, MA 01B41 TE L NO. 508 6 8 1- 03 92 TYPE 1N4938 (SILICON DIODE) AB SO L U T E MA XI MU M RA TI NG S PEAK RE VE RS E VO LTABE


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    PDF T-03-DÂ 1N4938 250mW 100mA DO-35 1N4938

    BDC08

    Abstract: BDC06 MPSW92
    Text: MOT ORCL A SC XSTRS/R F ISE D I t3b?aSM OOñS^lb T |T - BDC06 BDC08 CA SE 29-03, STYLE 14 TO-92 TO-226AE M A X IM U M RATINGS U nit Sym bol BDC 06 BDC 08 Collector-Emitter Voltage VCEO 300 250 Vdc Collector-Base Voltage VcBO 300 250 Vdc Em itter-Base Voltage


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    PDF BDC06 BDC08 O-226AE) BDC08 MPSW92

    tic 223

    Abstract: liA SOT23 7S1B-03
    Text: CASE 29-04 T0 -2 2 6 AA TO-92 1 3 2 CASE 318E-04 (TO-261AA) SOT-223 CASE 318-07 (TO-236AB) SOT-23 14 CASE 646-06 (TO-116) Plastic-Encapsulated Transistors CASE 7S1B-03 SO-16 M o to ro la 's p la s tic tra n s is to rs and d io d e s e n co m p a ss huncreds of devices spanning the gamut from general-purpose


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    PDF O-236AB) OT-23 318E-04 O-261AA) OT-223 O-116) 7S1B-03 SO-16 O-116 OT-23, tic 223 liA SOT23

    tic 2160

    Abstract: BDC07 BDC05 MPSW42
    Text: MO T OR OL A SC 12E D I fc.3b?aSM 0005115 ñ | X S TR S/ R F BDC05 BDC07 CASE 29-03, STYLE 14 TO-92 TO-226AE M AXIM UM RATINGS R atin g S ym b ol BDC 05 BDC 07 U n it C ollector-E m itter Voltage VCEO 3 00 250 Vdc Collector-Base Voltage VCBO 3 00 250 Vdc


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    PDF BDC05 BDC07 tic 2160 MPSW42

    F930

    Abstract: T12P MPF960 F990
    Text: MPF930* MPF960* MPF990* M AXIMUM RATINGS Rating Symbol MPF930 MPF960 MPF990 D ra in -S o u rc e V o lta g e V DS 35 D ra in -G a te V o lta g e V DG 35 G a te -S o u rc e V o lta g e V GS CASE 29-03, STYLE 22 TO-92 TO-226AE Unit 60 90 Vdc 60 90 V dc 3 D rain


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    PDF MPF930* MPF960* MPF990* MPF930 MPF960 MPF990 O-226AE) MPF930, MPF960, F930 T12P F990

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    PDF

    ML4000

    Abstract: diodes chart ML40150 ML4923 ML40019
    Text: M an AMP com pany Space Qualified Diodes ML4000 Series V2.00 GaAs Gunn Diodes Minimum Output Power Po mW Operating Frequency 5 to 8GHz 8 to 12.4GHz 12.4 18.0 22.0 27.0 32.0 40.0 50.0 90.0 to to to to to to to to 18.0GHz 22.0GHz 27.0GHz 32.0GHz 40.0GHz 50.0GHz


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    PDF ML4000 ML4901 ML4910 ML4903 ML4911 ML4905 ML4921 ML4931 ML4941 ML4951 diodes chart ML40150 ML4923 ML40019

    RG4 DIODE

    Abstract: 1N5821 MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE 1N5820 1N5822 IEC134 MCB841
    Text: SbE D • 7 1 1 D fi2 b r ilill J 9 UC1IHWVIIUUVIVI9 O lim c m i 7 T T ■ P H IN 11 T Controlled avalanche Schottky barrier diodes P H I L I P S IN T E R N A T IO N A L D E S C R IP T IO N Schottky barrier diodes in herm etically se aled S O D 8 4 A Implosion Diode ID ) envelope,


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    PDF 1N5820ID/21ID/22ID OD84A 1N5820 1N5821 1N5822 711002b RG4 DIODE MCB843 b35 DIODE schottky marking JB SCHOTTKY BARRIER DIODE IEC134 MCB841

    T74LS90

    Abstract: modulo-12 T74LSXX
    Text: SGS-THOMSON IQÂÏÏMSOtgS T74LS90 T74LS92/93 COUNTERS: LS90 DECADE LS92 DIVIDE BY TWELVE LS93 4-BIT BINARY • LOW POWER CONSUMPTION TYPICALLY 45 mW ■ HIGH COUNT RATES TYP 50 MHz ■ CHOICE OF COUNTING MODES BCD, BI-QUINARY. DIVIDE-BY-TWELVE BINARY ■ INPUT CLAMP DIODES LIMIT HIGH SPEED


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    PDF T74LS90 T74LS92/93 T74LSXX T74LS90/92/93 ILS90) modulo-12

    2SK1818-MR

    Abstract: No abstract text available
    Text: 2SK1818-MR FUJI POWER MOS-FET N-CHANNEL ENHANCEMENT TYPE MOS-FET F-Y SERIES I Features • O utline Draw ings Include fast recovery diode >Hign voltage Low driving power I A pp licatio n s Motor controllers Inverters Chcppors I Max. Ratings and Characteristics


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    PDF 2SK1818-MR SC-67

    BK 300 MI

    Abstract: WTVA KO-48 ESAC63-004 H125
    Text: ESAC63-004 2 oa i'a y h ï- 'O J T m — K SC H O T T K Y B A R R IER DIODE m n & : Features • f&vF Low Vp Super high speed switching. m m & n Connection Diagram High reliability by planer design, : Applications High speed power switching. M aximum Ratings and Characteristics


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    PDF O-22QAB SC-46 500ns, BK 300 MI WTVA KO-48 ESAC63-004 H125

    Untitled

    Abstract: No abstract text available
    Text: ESAC63-004 2 oa : O utline D raw ings >a - y h * - ' < V 7 m — F SCHOTTKY BARRIER DIODE 03.6 *o ? 4.5 ’Ü I .32 5 08 : Features JEDEC T0-220AB Low Vp EIAJ SC-46 T.'tvT's'f a e - K ^ n t i - a s i ' Super high speed switching. m m &m •1 & V F • Connection Diagram


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    PDF ESAC63-004 T0-220AB SC-46 500ns, l95t/R

    OA 10 diode

    Abstract: No abstract text available
    Text: ESA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE • 4 $ a : Features • teV F Low VF Super high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications High speed pow er sw itch in g . ■ Æ t& fc & te : Maxim um Ratings and Characteristics


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    PDF 500ns, I95t/R89) OA 10 diode

    Untitled

    Abstract: No abstract text available
    Text: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode


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    PDF IRG4PC30UD O-247AC

    ESAC85-009

    Abstract: No abstract text available
    Text: E SA C 85-009 ioa ♦>a SCHOTTKY BARRIER DIODE I 4 $ A : Features te V F Low VF S uper high speed sw itch in g . Connection Diagram H igh reliability by planer design : Applications 'M&ni3X4'y*>9 H igh speed pow er sw itch in g . Maximum Ratings and Characteristics


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    PDF ESAC85-009 T0-220AB SC-46 500ns,

    D 92 M - 03 DIODE

    Abstract: No abstract text available
    Text: F 1 H 5 B - 6 1 5 Q a * ± y =e ^ = l - ) v _ FAST RECOVERY DIODE MODULE : Features Short Reverse Recovery Time • tS IM S lV ft* • Variety of Connection Menu Insulated Type • fflJ i! I A pplications Arc-W elders • 7 l) —Tfr'i —Ji»y4


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    PDF 1FI150B-060050A) 50/60Hz l95t/R89 D 92 M - 03 DIODE

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SENICOND/DISCRETE 03 DE • 7E50533 OODbbCH 3 | ~ ZC2800Er ZC2810E ZC2811E ZC5800E Schottky barrier diodes The Z C 2 8 1 0 E is not recommended for NEW DESIGNS. CH ARACTERISTICS at 2 5 ° C ambient temperature . Parameter Breakdown Voltage Reverse leakage current


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    PDF 7E50533 ZC2800Er ZC2810E ZC2811E ZC5800E ZC2800E

    ae9t

    Abstract: M1011 T460 T760 TP802C09 A2D0.1 a456
    Text: TP802C09 ioa SCHO TTKY B A R R IER DIODE ’ Features • 1&VF Low V p Connection Diagram Super high speed switching. High reliability by planer design I Applications High speed power switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings


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    PDF TP802C09 500ns, l95t/R89 ae9t M1011 T460 T760 A2D0.1 a456