D MARKING L87 Search Results

part MARKING k48

Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Contextual Info: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E

BZX 48c 6v8

Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Contextual Info: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P

L78 H

Contextual Info: Centrai CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini surface mount package with enhanced specifications

"dual TRANSISTORs"

Contextual Info: Central" CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini™ surface

L78 marking transistor

Abstract: L78 H complementary npn-pnp transistor NF marking code CMLT5078E CMLT5087E CMLT5088E marking l87 IC MARKING CODE TA D marking l87
Contextual Info: CMLT5078E CMLT5087E CMLT5088E ENHANCED SPECIFICATION SURFACE MOUNT SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini surface mount package

D marking PNP

Abstract: CMLT5088E CMLT5078E CMLT5087E D 6 marking PNP L78 H dual NPN 100ma 50v
Contextual Info: Central CMLT5078E NPN/PNP CMLT5087E PNP/PNP CMLT5088E NPN/NPN TM Semiconductor Corp. ENHANCED SPECIFICATION PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5078E, CMLT5087E, and CMLT5088E, are Silicon transistors in a PICOmini™ surface

sot 23-5 marking code fairchild

Abstract: MARKING PA TR SOT-23 marking 305 marking pk sot23 power trench sot-23 fairchild
Contextual Info: FDV305N 20V N-Channel PowerTrench MOSFET General Description Features This 20V N-Channel MOSFET uses Fairchild’s high voltage PowerTrench process. It has been optimized for power management applications. • 0.9 A, 20 V Applications • Low gate charge

Contextual Info: www.ti.com TS3A24159 0.3-Ω DUAL SPDT ANALOG SWITCH DUAL-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER SCDS238C – MARCH 2007 – REVISED FEBRUARY 2008 FEATURES 1 • • • • • • • • 2 • DGS PACKAGE TOP VIEW Specified Break-Before-Make Switching

WC SOT23-3

Abstract: 6C t marking code sot 23 SOT-23 6C 6B SOT23-3 FAIRCHILD SOT-23 MARK 30 sot23 mark code e2
Contextual Info: BC817-25 / BC817-40 BC817-25 BC817-40 C E SOT-23 B Mark: 6B. / 6C. NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 38. Absolute Maximum Ratings*

MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Contextual Info: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark: 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 75. Absolute Maximum Ratings*

pn2222a fairchild

Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: www.ti.com TS3A24159 0.3-Ω DUAL SPDT ANALOG SWITCH DUAL-CHANNEL 2:1 MULTIPLEXER/DEMULTIPLEXER SCDS238C – MARCH 2007 – REVISED FEBRUARY 2008 FEATURES 1 • • • • • • • • 2 • DGS PACKAGE TOP VIEW Specified Break-Before-Make Switching

MARKING W3 SOT23 TRANSISTOR

Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 13 CKT SIZE 4 5 12 DIM A .709 .4 9 6 I2.60 .8 74 .66 I (22.20) ( I6.80 ) (26.40) 1.2 0 5 7 (3 0 . 6 0 ) 1.3 7 0 8 (34.80) L 535 9 (3 9 . 0 0 ) I0 I \2 B ( I8 .0 0 ) 1.0 3 9 6 DIM 10 1.7 0 I (43.20) 1.8 6 6 (47.40) NOTES: 1. MATERIALS: HOUSING: T = NYLON 6 /6 , U L 9 4 V - 2, COLOR: NA TUR AL

2N5088 Cross Reference

Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Contextual Info: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.

SOT23 component marking code KA

Abstract: MARKING W2 SOT23 Marking W3 marking code w2 sot23 BAT54 BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 sot-23 Marking L43
Contextual Info: BAT54/A/C/S BAT54/A/C/S BAT54/A/C/S Connection Diagrams: 3 3 BAT54 3 BAT54A Top Marking BAT54 = L4P BAT54A = L42 BAT54C = L43 BAT54S = L44 2 1 2 NC 1 BAT54S BAT54C 2 1 2 1 3 3 1 2 Schottky Barrier Diode Sourced from Process KA. Schottky Barrier Diode Sourced from

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MARKING W2 SOT23

Abstract: diode 4148 sot-23 fairchild s sot-23 Device Marking Diode Marking 1p SOT-23 marking code w2 sot23 marking P2 sot-23 On semiconductor date Code sot-23 SOT23 DIODE marking CODE AV fairchild marking codes sot-23 4148SE
Contextual Info: 3 CONNECTION DIAGRAMS 5H 3 3 4148 2 NC 1 1 2 4148CC 2 SOT-23 MARKING MMBD4148 5H MMBD4148CA D6 MMBD4148CC D5 MMBD4148SE D4 1 3 1 2 3 3 1 2 4148SE 1 4148CA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings*

power sot-23 Marking aa

Abstract: SOT23 component marking code KA MARKING W2 SOT23 L443 sot-23 MARKING bv BAT54A BAT54C BAT54S Schottky Diode Marking sot-23 marking P2 sot-23
Contextual Info: BAT54/A/C/S 3 CONNECTION DIAGRAMS PACKAGE BAT54 L4P SOT-23 TO-236AB Low 1 2 3 2 NC 1 MARKING BAT54 L4P BAT54C L43 BAT54A L42 BAT54S L44 3 BAT54C 2 1 3 3 2 1 BAT54A BAT54S 1 2 Schottky Barrier Diode Sourced from Process KA Absolute Maximum Ratings* Sym Tstg

BAR43/D95

Abstract: MARKING W2 SOT23 da5 diode "MARKING CODE" LA sot-23 fairchild marking codes sot-23 marking db2 bar43c A0 SOT-23 BAR43 BAR43A BAR43S
Contextual Info: BAR43/A/C/S BAR43/A/C/S Connection Diagrams: 3 3 3 BAR43 BAR43A Top Marking: 2 1 BAR43 BAR43A BAR43C BAR43S = D95 = DB2 = DB1 = DA5 2 NC 1 3 3 BAR43S BAR43C 1 2 1 1 2 2 Schottky Barrier Diode Sourced from Process KA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

marking l30

Abstract: 1N4150 BAV23S MMBD1201 MARKING W2 SOT23 SOT23 DIODE marking CODE AV wA MARKING SOT-23 SERIES DIODE L30 SOT23 sot-23 Marking 3p wc diode sot23
Contextual Info: BAV23S BAV23S Top Marking: L30 3 2 Connection Diagram: 3 2 1 1 High Voltage General Purpose Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units IF AV Average Rectified Current 200 mA IFSM Non-repetitive Peak Forward Surge Current

transistor 1201 1203 1205

Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Contextual Info: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBD1503

Abstract: MMBD1501 MMBD1501A MMBD1503A MMBD1504 MMBD1505 MARKING 1L SOT-23 marking P2 sot-23 wA MARKING SOT-23 SERIES DIODE SOT23 MARKING CODE 720
Contextual Info: 3 CONNECTION DIAGRAMS 11 3 1 2 SOT-23 MMBD1501 MMBD1503 MMBD1504 MMBD1505 1 3 1501 2 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A 2 NC 1 A11 A13 A14 A15 1 2 3 3 1504 1503 3 1 2 1 1505 2 High Conductance Low Leakage Diode Sourced from Process 1L.

sot-23 marking code sf

Abstract: Marking ss SOT-23 BD1701 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 sot-23 Marking B1
Contextual Info: 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 2 NC 1 2 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 1 1 2 1703 2 3 3 1704 85A 87A 88A 89A 3 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T.