PZTA06 Search Results

Contextual Info: Product specification PZTA56 SOT-223 • Features Unit: mm +0.2 3.50-0.2 +0.2 -0.2 6.50 ● Collector current DC ：IC=500mA +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 ● Power dissipation：PC=1W +0.2 0.90-0.2 +0.1 3.00-0.1 ● Complementary NPN Type Available (PZTA06)

MPS A06 transistor

Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 PZTA06 TRANSISTOR NPN FEATURES   1. BASE Low Voltage and High Current General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

UA 3843 A

Abstract: MPSA06 fairchild transistor BF121 MMBTA06 MPSA06 PZTA06 ic 3843 ua 3843 ic 3843 datasheet
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

ic 3843 datasheet

Abstract: 3843 MMBTA06 MPSA06 PZTA06
Contextual Info: MPSA06 MMBTA06 PZTA06 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol

MPSA06

Contextual Info: MPSA06 / MMBTA061 PZTA06 Discrete POWER & Sign al Technologies National Semiconductor “ PZTA06 MMBTA06 MPSA06 SOT-23 SOT-223 Mark: 16 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.

MPSA06

Abstract: MPSA06 fairchild transistor PZTA06 SOT-223 LA 3843 CBVK741B019 F63TNR MMBTA06 PN2222N PZTA06 mark 116 sot
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: s e m :c d ! S U G T O R -,> MPSA06 MMBTA06 PZTA06 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum RatinQS TA = 25°C unless otherwise noted

MARKING W3 SOT23 TRANSISTOR

Abstract: SOT23-3 JEDEC standard orientation sot23 mark E coding MARKING W2 SOT23 TRANSISTOR sot-23 marking code w2 transistor marking code ne SOT-23 FAIRCHILD SOT-223 MARK WC SOT23-3 marking code fs 1 sot 223 wc sot23
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

ic 3843 datasheet

Abstract: ua 3843 MMBTA06 MPSA06 PZTA06
Contextual Info: MPSA06 MMBTA06 PZTA06 C C E E C BE TO-92 SOT-23 C B B SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol

Contextual Info: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G

Contextual Info: SEMEONPUCTQR MPSA06 MMBTA06 SOT-23 PZTA06 B SOT-223 M ark: 1G NPN General Purpose Amplifier T his device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

BP317

Abstract: PZTA06 PZTA56
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA06 NPN general purpose transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose transistor

Philips MD4

Abstract: PZTA05 PZTA06 Phin
Contextual Info: Philips Semiconductors Data sheet status Preliminary specification date of issue April 1991 PZTA05/PZTA06 Silicon epitaxial transistors QUICK REFER EN CE DATA DESCRIPTION DESCRIPTION 1 base 2 collector 3 emitter 4 collector VCBO VcEO V ebo lc hpE PARAMETER

ic 3843

Abstract: PZTA06 SOT-223 CBVK741B019 F63TNR MMBTA06 MPSA06 PN2222N PZTA06 SOT23 JEDEC standard orientation pad size MPSA06 fairchild transistor
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MMBTA06

Abstract: MPSA06 PZTA06
Contextual Info: 2001-04-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-033-69 MPSA06 trans MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier

2MPSA06

Abstract: MPSA06 NPN EBC SOT-23 MMBTA06 PZTA06 SOT-23 EBC B010100
Contextual Info: MPSA06 / MMBTA06 / PZTA06 NPN General Purpose Amplifier Features • This device is designed for general purpose amplifier applications at collector currents to 300mA. • Sourced from Process 33. MMBTA06 MPSA06 PZTA06 C C E E TO-92 SOT-23 SOT-223 B Mark:1G

ua 3843

Abstract: UA 3843 A ltf5 3843 ic 3843 3843 application note MMBTA06 MPSA06 PZTA06
Contextual Info: MPSA06 / PZTA06 Discrete POWER & Sign al Technologies National e? Semiconductor PZTA06 MMBTA06 MPSA06 SOT-23 B SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.

Contextual Info: Philips Semiconductors Product specification NPN general purpose transistor FEATURES PZTA06 PINNING • High current max. 500 mA PIN • Low voltage (max. 80 V). DESCRIPTION 1 base 2, 4 APPLICATIONS collector emitter 3 • Medium power switching in e.g. telephony and

Contextual Info: PZTA06 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.50 h(FE) Max. Current gain.

pn2222a fairchild

Abstract: MARKING W2 SOT23 TRANSISTOR marking A06 amplifier MARKING CODE A06 a06 transistor
Contextual Info: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BF1216

Contextual Info: MMBTA06 PZTA06 C C E C B TO-92 B SOT-23 E SOT-223 Mark: 1G B E C MPSA06 / MMBTA06 / PZTA06 MPSA06 NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings*

1D SOT 23-6

Abstract: MMBTA06 MMBTA42 MMBTA43 NZT6714 NZT6715 NZT6717 PZTA06 PZTA42
Contextual Info: This Surface Mount Transistors Material tr Copyrighted □ □ Ln a t-* t-1 Ui Discrete POWER & Signal Technologies Na t i o n a I f i Semiconductor" Surface Mount Transistors a NPN Medium Power JC a JC -0 _D By ai a -i Device No. SOT-23 Mark Case Style

PZTA05

Abstract: PZTA06
Contextual Info: 711002b □Gb'^TS S76 « P H I N Philips Semiconductors Data sheet status Preliminary specification date of issue April 1991 V ebo lc LU x:IL base collector emitter collector VcEO DC current gain fT transition frequency VCE sat collector-emitter saturation voltage