D002 Search Results

Contextual Info: Plastic fibre optics HPF-D002-H Technical data General specifications Fibre optic length Fibre optic diameter End piece Bend radius Approvals l d 2000 mm 2.2 mm thread min. 25 mm CE Standard conformity Standards EN 60947-5-2 Ambient conditions Ambient temperature

Contextual Info: SOLI» STATE DEVICES INC 12E D |fi3bLQll D00207S S | Pr eliminary Data Sheet f - 32-07 .-• .— — — - ■ ■ SFT3997 SSDI 5 AMP HIGH SPEED NPN TRANSISTOR 14849 FIRESTONE BLVD. LA MIRADA, CA. 90638 213 921-9660 FAX (213) 921-2396 150 VOLTS e; s t y l e :

Contextual Info: SOLID STATE DEVICES INC 15E D | f l 3 t b 0 1 1 D0020Ô3 1 | T ' 3 3 2N5006 AND 2N5008 10 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS - IS 2>^m\ 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 CASE STYLE T

Contextual Info: I I ^QOmai D002544 I bi FMP-CR MAINTENANCE TYPE FOCUS METAL-GLAZE PRESET conductive rubber versions • For hi-bi and lo-bi colour picture tubes, focus voltage range 3.9 to 9.3 kV • Simple mounting and connection by conductive rubber QUICK REFERENCE DATA

C1327 transistor

Abstract: c1251 C1327 C1322 C2079 MCT276
Contextual Info: GENL I N S T I L OPTOELEK GENERAL INSTRUMENT fla 880 0299S 0-r-^ -83 DE 1 3 0 ^ 0 1 2 3 D002Ti5 □ f • Optocoupiers 3890128 GE NL INSTR, O P T O E L E K PHOTOTRANSISTOR OPTOCOUPLER MCT276 DESCRIPTION PACKAGE DIMENSIONS The MCT276 is a phototransistor-type optically

diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Contextual Info: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation

0813p

Contextual Info: M ER R IM A C IN D U ST R IE S IN C HbE D b004b3T D00201D hd Merrimac 3 IH fi M I I — p 'p ^ . IQP-20R series PRECISION I & Q DEMODULATORS Close Tolerance Meri-Pac • Catalog and Custom to 1000 MHz • Low Loss, ±1°, 0.1 dB Balance • Low Profile, High Reliability Package

Contextual Info: SA N Y O SEMICONDUCTOR tí CORP 1S.E D I i m U l W D002bál - *. . T-&7 -ZI-SS ' I I H I Í h íÍ P CMOS High-Speed Standard Logic LC74HC Series 3006B - 3 1 7 3 5 B to 8 -L i n e • D e c o d e r . . . Features , The LC74H C 1 3 8 decodes a. three - b i t address to one-of - e i g h t activ e - l o w outputs.

DS1820B

Abstract: DS2436C DS2433A DS18S20B DS1282A dallas date code octagon qualify DS80CH11 DS1002A
Contextual Info: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: April 25, 2000 Subject: PRODUCT CHANGE NOTICE – D002501 Description: DS80CH11 Changing from A3 to A4

BCW61RA

Abstract: bcx71 bcx71rh BCX71C BCW60
Contextual Info: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

TWX910-950-1942

Abstract: XGS05035 XGSQ5030 XGSQ5035 XGSQ5040
Contextual Info: SÛUARE D CO/ GE NE RAL 3918590 GENERAL 15 D • ôSESSQâ D002210 SEM ICONDUCTOR 95D S 02210 CR. General ^ ^S em ico n d u cto r i^L * Industries, Inc. XGSQ5030 XGSQ5035 XGSQ5040 adUHRETl COMPRNV 7-0 3 - 0*7 NPN SWITCHING POWER TRANSISTORS NPN This unique series utilizes General Semiconductor Industries' C 2R process which

MCR1906-6

Abstract: MCR1906-8 MCR1906-2 MCR1906-4 MCR1906 MCR1906-3
Contextual Info: MOTOROLA SC DIODES/OPTO BSE D b3b72SS D002ÖÖL 4 ÖM0T7 T- 25"- 5" MCR1906 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors T h e se d e v ice s are g la ss iv a te d p la n ar co n stru ctio n d e sig n e d fo r a p p lic a tio n s in

0211s

Abstract: 1N4728 1N4764 DO-213AB MLL4728 MLL4730A MLL4731A MLL4764 HLL47
Contextual Info: MICROSEni CORP STE D nsc b l l 5 ñ t i S D002114 4kT MLL4728 thru MLL4764 Microsemi Corp. 5 C O T T S / A i.L . A Z For more information, call: S A M 'A A S A , CA 6 0 2 ) <MMOOO D E S C R I P T I O N /F E A T U R E S • • • • LEADLESS GLASS ZENER

IEEE 1284 CONNECTOR

Abstract: micro UPS Model 1000 diagram S1284 schematic diagram UPS IEC1000-4-2 150pFr 1284-C
Contextual Info: PRELIMINARY " lâ31k 0 D00233b 7 0 C A L I F O R N I A M IC R O D E V IC E S ►►►►► SUPER 1284 P/ACTIVE IEEE 1284 ECP/EPP TERMINATION NETW ORK Features A p p lica tio n s • • • • • • • • • • Single chip IEEE 1284 parallel port termination

120v 10a transistor

Abstract: o25m 2N5291 npn 120v 10a transistor
Contextual Info: SOLITRON DEVICES INC fib DE I fiBbfikDa D002S0b 5 | 'f'-jjELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PN P EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 63 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum Collector: Polished Silicon

SFR 460

Contextual Info: 9 0 9 7 2 50 T O S H I B A " D I S C R E T E / O P T O _ 39C 02361 “¿13 THYRISTOR STACK (BRIDGE STACK) TOSHIBA {DI SC RE TE/ OPTO } 3T De | T Q ^ S S G D0023L.1 b 1. STUD TYPE STACK 3-P H A S E HYBRID BRIDGE SFR300L6P1, SFR300U6P2 The SFR300L6P1 and SFR300U6P2 series are thy­

Contextual Info: MICRON TECHNOLOGY INC 3fiE D b l U S M T D0027ÖS fi BiflRN m T -M -ii-o Ç t [iUiiW 4K X 4 SRAM SRAM WITH SEPARATE INPUTS AND OUTPUTS FEATURES PIN ASSIGNMENT Top View « High speed: 12,15,20,25,30 and 35ns • High-performance, low-power, CMOS double metal

ITT 1P647

Abstract: RM4004G 1N4003 specs BY410 itt 1p644 ITT BY133 1P646 1N4007 A7 PR54A 1N4001
Contextual Info: 4684955 I T T S E M I C ONDUCTOR S D E | ML, fl in55 D002345 • 87D 02345 flr D RECTIFIERS T ~ o t~f l Silicon Rectifiers 1 and 3 Amps in Plastic Package Type Dwg. No. Average Rectified Current atTA=60°C Peak Inverse Voltage lo P.I.V. Repetitive Peak Forward

M05R

Abstract: 16v8d
Contextual Info: WF D SSF • bbD13^3 D002S74 103 ■ ALUMINUM ELECTROLYTIC CAPACITORS Chip Type, Low Im pedance n ic liic o n Z IP Low Impedance Anti-Solvent Feature • Chip type, low impedance temperature range up to +105°C. • Designed for surface mounting on high density PC board.

120v 10a transistor

Contextual Info: SOLITRON DEVICES INC fib D E | A3hAb02 D002£7b 0 ~f~ 'T'~ 3 } ~ ° * ELEMENT NUMBER 186 MEDIUM VOLTAGE, FAST SWITCHING NPN E P IT A X IA L/T R IP L E DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 A Aluminum FO RM ERLY 86

Contextual Info: •SUPER INTENSITY INFRARED LED 92 4b7fll5fl D00242b S7b |>| Sensor ▼PACKAGE DIMENSIONS Unit : mm

1s1892

Abstract: toshiba 1s1891 1S1890 1S1891 J120 1s188 1S1885A 1S1886A 1S1887A 251C
Contextual Info: 9 0 9 Z 2 50 T O S H I B A 39C 0222<+ <D I S C R E T E / O P T O STANDARD RECTIFIER 1S1887A T ~ à/ ' f$- D E g ì D Ì T E S D D002ES4 7 f Unii in ; 400V 1.2 A MAXIMUM RATINGS CHARACTERISTIC 1S1885A Repetitive Peak 1S1886A Reverse Voltage 1S1887A Average Forward Current

BCX71RG

Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
Contextual Info: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

547AR

Contextual Info: •]LITE-ON INC i m 31 E D . ■ SS3b3b? LTS-540ASERIES D0023b2 T ILTN 0.52" SINGLE D IG IT NUMERIC DISPLAYS • M I-3 3 FEATURES • 0.52 INCH 13.2m m D IG IT H EIG H T. • CO N TINU O U S U N IF O R M SEGMENTS. • CHOICE OF S IX B R IG H T C O LO R S-R ED /B R IG H T