D0237 Search Results

Contextual Info: MITSUBISHI LSIs bHMRflSS D02377G 00 3 • f l I T l M 5 M 4 V 4 8 J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4194304-BIT 524288-WORD BY 8-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) (3 .3 V )V c c DQl * * { DQ2 «■ »RITE CONTROL

D0237

Abstract: AD578 DH-32B
Contextual Info: ANALOG DEVICES INC 33E D H DölbflOO 0 Q 2 3 7 Ö 7 A N ALO G D E V IC E S 5 • ANA Very Fast, Complete 12-Bit A/D Converter AD578 . „ 1.1 T-5/ -10-IZ Scope. T his specification covers the detail requirem ents for a hy b rid , very fast, 12-bit successive approxim ation

Contextual Info: b E 4 tì fl ES 0G23bTì IMA • H IT 1 MITSUBISHILSIs M 5 M 4 4 1 9 0 A J ,T P ,R T - 6 ,-7 ,-8 ,-6 S ,- 7 S ,- 8 S FAST PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 18-bit dynamic RAMS, fabricated with the high performance CMOS process, and is

KM681001A

Abstract: KM681001A-15 KM681001A-20 KM681001AJ D0237
Contextual Info: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. .• Low Power Dissipation Standby (TTL) The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by

Contextual Info: BiCMOS SRAM KM68B1002 128Kx8 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION The KM68B1002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM68B1002 uses eight common Input and output lines and has an output enable pin which operates

Contextual Info: Data Sheet • A l G il Microelectronics T7121 HDLC Interface for ISDN HIFI-64 Features • Low-cost device for B-channel (64 kbits/s) or Dchannel (16 kbits/s) data transport ■ Optional transparent mode — no HDLC framing is performed ■ Frame sync (FS) allows a slot-select feature to

Contextual Info: International \IQR}Rectifier Provisional Datasheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED IR H N A7260 IR H N A 8260 HEXFET T R A N S IS T O R N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology

CDM5364

Contextual Info: HARRIS SEMICOND SECTOR 37E D M3D2271 0023712 1 IHAS Read-Only Memories ROMs CDM5364, CDM5364A T-w-w-is- to Ol 24 - VDD - A8 22 - A9 21 - AI2 — CE/CÉ (9 - AIO ie - A ll 17 - <57 16 — 06 15 - Q5 14 — 04 13 - Q3 92C3-336 C D M 5364

Contextual Info: taMTÖSS OOEBTMû b b? • M IT I MITSUBISHI LSIs M5M4V4400J,TP,RT-6,-7,-8, -6S,-7S,-8S FAST PAGE MODE 4194304-BIT 1048576-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a fam ily of 1 0 4 8 5 7 6 - word by 4 - b it dynamic R AM S,

Contextual Info: Si GEC P L E S S E Y S E M I C O N D U C T O R S DS3574-3.3 MA28151 RADIATION HARD PROGRAMMABLE COMMUNICATION INTERFACE The MA28151 is based on the industry standard 8251A Universal Synchronous Asynchronous Receiver/Transmitter USART , modified for data communications with the MAS281

ma31750

Contextual Info: S i GEC PLESSEY SE M IC O N D U C TO R S DS3810-2.4 MA8251 RADIATION HARD PROGRAMMABLE COMMUNICATION INTERFACE The MA8251 is based on the industry standard 8251A Universal Synchronous Asynchronous Receiver/Transmitter USART . The MA8251 is used as a peripheral device and is

Contextual Info: cP ÍITSU IJ L 1 J v May 1997 Revision 1.0 d a ta s h e e t SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as

TLCS-68000

Contextual Info: S HI B A UC/UP 54E D TOSHIBA • DDE3 7 1 ti 7 7 S * T 0 S 3 TM P68440 ~ T V 5 2 '* 3 3 - 1 ? 1. INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to maxim ize performance and throughput. The TMP68440 dual-direct memory access controller

Contextual Info: O K I Semiconductor MSM6652/6653/6654/6655/6656 Speech Synthesizers with Internal ROM DESCRIPTION The MSM6650 family is the successor to the MSM637x family. These speech synthesizers use varying amounts of internal mask ROM for speech playback, as shown in the table below.

Contextual Info: b E 4 li ñ S S 0 0 2 3 7 ^ 2 7 7 4 • H I T MITSUBISHI LS Is ! M5M4V4900J,TP,RT-6,-7,-8,-6S,-7S,-8S 1 * ,> FAST PAGE MODE 4718592-BIT 524288-WORD BY 9-BIT DYNAMIC RAM r. \\n<¿ DESCRIPTION This is a fam ily o f 524288-w ord by 9-bit dynamic RAMs, PIN CONFIGURATION (TOP VIEW)

jedec package MO-220-WGGD

Abstract: package lfcsp-wq
Contextual Info: a FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance 2.5 ⍀ Typ Low On-Resistance Flatness (0.5 ⍀) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm ؋ 4 mm Chip Scale Package Fast Switching Times t ON = 16 ns t OFF = 10 ns Typical Power Consumption (< 0.01 ␮W)

Contextual Info: 2.5 ⍀ Quad SPST Switches in Chip Scale Package ADG781/ADG782/ADG783 a FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance 2.5 ⍀ Typ Low On-Resistance Flatness (0.5 ⍀) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm ؋ 4 mm Chip Scale Package

Contextual Info: KM641003 CMOS SRAM 256K x 4 Bit With UE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10mA(max.) Operating KM641003-15: 170mA(max.) KM641003-17:1 6 0 mA(max.)

Contextual Info: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS3577-3.4 MA290911 RADIATION HARD MICROPROGRAM SEQUENCER The MA2909/11 M icroprogram Sequencer is fully compatible with the industry standard 2909A and 2911A components, and forms part of the GPS 2900 Series of

Contextual Info: bSMTöES □□237E7 T32 • M I T I MITSUBISHILSIs M5M4V 4100J,TP,RT- 6,-7,-8, -6S,-7S,-8S FAST PAGE MODE 4194304-BIT 4194304-WORD BY 1-BIT DYNAMIC RAM DESCRIPTION This is a fam ily o f 4 1 9 4 3 0 4 -w ord by 1- b it dynamic RAMS, PIN CONFIGURATION (TOP VIEW)

LFCSP-WQ

Contextual Info: a CMOS 3 V/5 V, Wide Bandwidth Quad 2:1 Mux in Chip Scale Package ADG784 FEATURES Low Insertion Loss and On Resistance: 4 ⍀ Typical On-Resistance Flatness <2 ⍀ Bandwidth >200 MHz Single 3 V/5 V Supply Operation Rail-to-Rail Operation Very Low Distortion: <1%

LFCSP-WQ

Abstract: ADG783BCPZ-REEL7 package lfcsp-wq CP-20-6
Contextual Info: a FEATURES 1.8 V to 5.5 V Single Supply Low On Resistance 2.5 ⍀ Typ Low On-Resistance Flatness (0.5 ⍀) –3 dB Bandwidth > 200 MHz Rail-to-Rail Operation 20-Lead 4 mm ؋ 4 mm Chip Scale Package Fast Switching Times t ON = 16 ns t OFF = 10 ns Typical Power Consumption (< 0.01 ␮W)

Contextual Info: MITSUBISHI MICROCOMPUTERS 3806 Group SINGLE-CHIP 8-B IT CMOS MICROCOMPUTER DESCRIPTION • A-D converter. 8 -b itX 8 channels The 3806 group Is 8-bit microcomputer based on the 740 • D-A -b itX 2 channels

41516

Abstract: MSM6650 MSM6652 MSM6653 MSM6654 MSM6655 MSM6656 B-057
Contextual Info: O K I Semiconductor MSM6652/6653/6654/6655/6656 Speech Synthesizers with Internal ROM D E S C R IP T IO N The MSM6650 family is the successor to the MSM637x family. These speech synthesizers use varying amounts of internal mask ROM for speech playback, as shown in the table below.