D029 Search Results

D029

Abstract: L465 L4B10 L4B11 L4B12 L4B13 L4B15 L4B16 L4B18 l4b7
Contextual Info: L4 Series 400W Voltage Limiting Diodes A range of medium power zener and avalanche surge suppressor diodes available to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar configurations.

in4728

Abstract: IN4158 in4764 IN4400 IN4193 104 Z4 z0b07 IN4358 Z0B11 Z0B12
Contextual Info: Z4 Series ZO Series 1W Voltage Regulator D iodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con­ figurations. P max c o n t-

in4728

Abstract: zener diode Z483 IN4158 zener diode Z487 104 Z4 Z4 13 Z4*13 z4810 Z4818 D029
Contextual Info: Z4 Series ZO Series 1W Voltage Regulator Diodes A range of medium power zener and avalanche diodes to BS 9305-F-078 in a hermetically sealed D029 glass package in both unipolar and bipolar con­ figurations. P max c o n t- 1W

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

T86 MSOP

Abstract: AD7476A AD7477A AD7478A TMS320C541 AD7476AAKSZ-500RL7
Contextual Info: 2.35 V to 5.25 V, 1 MSPS, 12-/10-/8-Bit ADCs in 6-Lead SC70 AD7476A/AD7477A/AD7478A FEATURES FUNCTIONAL BLOCK DIAGRAM Fast throughput rate: 1 MSPS Specified for VDD of 2.35 V to 5.25 V Low power 3.6 mW at 1 MSPS with 3 V supplies 12.5 mW at 1 MSPS with 5 V supplies

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

PIC18F example code CAN bus

Abstract: 18f14k50 PIC18f external interrupt example codes PIC18F sleep mode example 3 phase pwm generator pic18f PIC18f clearing ram pic18f for 3 phase inverter pic 18f14k50 PIC18f example codes PIC18F45k20 examples
Contextual Info: PIC18F/LF1XK50 Data Sheet 20-Pin USB Flash Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41350D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

AD5545

Abstract: AD5555 TSSOP-16 low input capacitance buffer ADR06
Contextual Info: Dual, Current-Output, Serial-Input, 16-/14-Bit DACs AD5545/AD5555 FEATURES 16-bit resolution AD5545 14-bit resolution AD5555 ±1 LSB DNL monotonic ±1 LSB INL 2 mA full-scale current ±20%, with VREF = 10 V 0.5 s settling time 2Q multiplying reference-input 6.9 MHz BW

pin diagram of PIC18f45k22

Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: ^ O l l b M B D O O O I S I 2TÖ 2mm M22 Connectors E x t e n d e d Pin H e a d e r s PITCH A range of extended pin headers which can be used with sockets shown on pages F2 to F5. For spacing other than 6 or 12mm, please contact Technical Sales, or use codes shown on paqes

322120S-70

Abstract: HYB514400
Contextual Info: SIEMENS 2 M X 32-Bit Dynamic RAM Module HYM 322120S-60/-70/-80 Advanced Information • 2 097 152 words by 32-Bit organization alternative 4 194 304 words by 16-Bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time

Contextual Info: R011b43 0 0G D m 3 151 2mm M22 Connectors Horizontal Sockets PITCH A range of single and double row horizontal sockets which can be used with pin headers shown on pages F8 to FI 2. Tapered entry for pin insertion and a choice of plating finish, tin or selective

Contextual Info: • I Q l l b H B 0 0 G G 03 Ö T63 2mm M22 C onnectors V e r t i c a l Pi n H e a d e r s PITCH A range of single and double row vertical pin headers which can be used with jumper sockets shown on page F5 and pc board sockets shown on pages F2 to F4. Choice of plating finish.

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

Intel 1103 DRAM

Abstract: D03B intel 1103 ram D018 D019 D032
Contextual Info: TOSHIBA THMY6432G1EG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT SYNCHRONOUS D RAM MODULE DESCRIPTION The THMY6416E1BEG is a 33,554,432-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59SM708FT DRAMs and an unbuffer on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THMY6480F1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

OQ45

Abstract: D018 D019 D032
Contextual Info: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.

STK4030-II

Abstract: STK4030II STK4024II stk403-0 t27V
Contextual Info: Ordering num ber : E N 170 6 D Thick Film Hybrid IC STK4030II AF Power Amplifier Split Power Supply _ (35W min, THD - 0.4%) Package Dime Features • Small-sized package permitting audio sets to be made slimmer • The STK4024II series are available for output 20W to

ra2b

Contextual Info: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TO SHIBA THMY728030BEG-80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY728030BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and PLL/Registers on a printed circuit board.