D049 Search Results

SST49LF003

Abstract: SST49LF003B SST49LF030A
Contextual Info: 3 Mbit LPC Flash SST49LF030A D0490007: SST49LF030A3Mb LPC Flash EOL Product Data Sheet FEATURES: • LPC Interface Flash – SST49LF030A: 384K x8 3 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors

sst49lf003b

Abstract: a2724 SST49LF030A
Contextual Info: 3 Mbit LPC Flash SST49LF030A D0490007: SST49LF030A3Mb LPC Flash EOL Product Data Sheet FEATURES: • LPC Interface Flash – SST49LF030A: 384K x8 3 Mbit • Conforms to Intel LPC Interface Specification 1.0 • Flexible Erase Capability – Uniform 4 KByte Sectors

Contextual Info: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

tc516

Contextual Info: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which

18f24k22

Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •

MAX308x

Contextual Info: 5 V, Slew-Rate Limited, Half-Duplex and Full-Duplex RS-485/RS-422 Transceivers FEATURES FUNCTIONAL BLOCK DIAGRAMS VCC EIA RS-485-/RS-422-compliant Data rate options ADM4850/ADM4854: 115 kbps ADM4851/ADM4855: 500 kbps

pin diagram of PIC18f45k22

Abstract: PIC18F45K22 18F25K22 pic18F26K22 example C codes PIC18F26k22 PIC18F k22 PIC18LF26K22 PIC18F46K22 DS41412D PIC18FXXK22
Contextual Info: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412D Note the following details of the code protection feature on Microchip devices: •

MiniKit-ADuC7020

Abstract: 0x37 1 mw 3phase transformer 50 Hz
Contextual Info: Precision Analog Microcontroller, 12-Bit Analog I/O, ARM7TDMI MCU ADuC7019/20/21/22/24/25/26/27/28/29 Data Sheet FEATURES On-chip peripherals UART, 2x I2C and SPI serial I/O Up to 40-pin GPIO port1 4× general-purpose timers Wake-up and watchdog timers WDT

D018

Abstract: D019 D032
Contextual Info: TOSHIBA THMY51E10C70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10C is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

D018

Abstract: D019 D032 D051 THMY51E10B70
Contextual Info: T O S H IB A THMY51E10B70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E10B is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TO SH IB A THLY648031 BFG-80,-80L,-10,-10L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY648031BFG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT/BFTL DRAMs on a printed circuit board.

Contextual Info: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

Contextual Info: TOSHIBA THM65V1635ATG-4,-5 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V1635ATG is a 16,777,216-word by 64-bit dynamic RAM module consisting of 16 TC5164405AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: TO SHIBA THM73V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: TOSHIBA THM73V1615BTG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM 73V1615BTG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 T C 5165405B FT DRAMs on a printed circuit board. This module is optimized for applications which

Contextual Info: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

ra2b

Contextual Info: TOSHIBA THMY7264E0LEG-75,-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7264E0LEG is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704FT DRAMs and PLL/Registers on a printed circuit board.

Sync generator VGA

Abstract: analog of signal generator timing generator sync VGA Signal Generator AD9994 12bit CCD signal processor
Contextual Info: 12-Bit CCD Signal Processor with Precision Timing TM Generator AD9994 GENERAL DESCRIPTION FEATURES 10-phase or 12-phase vertical transfer clocking Supports 4-field and 5-field CCD readout Correlated double sampler CDS 6 dB to 42 dB 10-bit variable gain amplifier (VGA)

ADSP-21160

Abstract: ADSP-21161 ADSP21261 ADSP-21261
Contextual Info: SHARC Embedded Processor ADSP-21261 a SUMMARY KEY FEATURES High performance 32-bit/40-bit floating-point processor Code compatibility—at assembly level, uses the same instruction set as other SHARC DSPs Single-instruction multiple-data SIMD computational architecture—two 32-bit IEEE floating-point/32-bit fixed-point/

ADP3418

Abstract: 1n4148ws T/R philips 3f3 ferrite NTD4 PHILIPS toroidal core 3f3 1N4148WS ADP3182 NTD40N02 Toroid 3F3
Contextual Info: Adjustable Output 1-/2-/3-Phase Synchronous Buck Controller ADP3182 FEATURES GENERAL DESCRIPTION Selectable 1-, 2-, or 3-phase operation at up to 1 MHz per phase ±2% worst-case differential sensing error over temperature Externally adjustable 0.8 V to >5 V output from a 12 V supply

ADM485x

Contextual Info: 5 V Slew-Rate Limited Half- and Full-Duplex RS-485/RS-422 Transceivers ADM4850–ADM4857 EIA RS-485-/RS-422-compliant Data rate options ADM4850/ADM4854—115 kbps ADM4851/ADM4855—500 kbps ADM4852/ADM4856—2.5 Mbps ADM4853/ADM4857—10 Mbps Half- and full-duplex options

SMT160

Contextual Info: ADVANCE M IC R O N 1 MT16D T 164(S), MT16D(T)464 1 MEG, 4 MEG x 64 DRAM MODULES DRAM MODULE 1 MEG, 4 MEG x 64 8, 32 MEGABYTE, 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 168-pin,

Contextual Info: 3.2 Gbps, 3.3 V, Low Noise, Transimpedance Amplifier ADN2880 FEATURES GENERAL DESCRIPTION Bandwidth: 2.5 GHz Optical sensitivity: −24.2 dBm 1 Differential transimpedance: 4400 V/A Power dissipation: 70 mW Differential output swing: 260 mV p-p Input overload current: 4.3 mA p-p