D071S Search Results

5118160

Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1k-Refresh HYB 5118160BSJ-50/-60/-70 Advanced Inform ation • • • 1 048 576 words by 16-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

Contextual Info: SIEM ENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 3118160BSJ-50/-60/-70 Advanced Information I 048 576 words by 16-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

D071S

Contextual Info: Decembsr 1994 Semiconductor NM27LV010B 1,048,576-Bit 128k x 8 Low Voltage EPROM General Description Features The NM27LV010B is a high performance Low Voltage Elec­ trically Programmable Read Only Memory. It is manufac­ tured using National's latest 0.8/i CMOS split gate AMG tm

D071521

Abstract: d0715 Q67100-Q1104 Q67100-Q1105 Q67100-Q1106
Contextual Info: SIEM EN S 2M X 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode - EDO HYB 5117805BSJ -50/-60/-70 Prelim inary Information • • • 2 097 152 words by 8 -bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)

tivd

Abstract: d07-15 d0715 M08A M14B NM24C16 NM24C16L 50090
Contextual Info: a t i o n a l S e m February 1995 i c o n d u c t o r & NM24C16L 16,384-Bit Serial EEPROM l2C Synchronous 2-Wire Bus General Description Features The N M 24C 16L device has 16,384 bits o f C M O S non­ vo la tile electrica lly erasable memory. This device conform s

Contextual Info: January 1995 Semiconductor NM27P010 1,048,576-Bit 128k X 8 POP Processor Oriented CMOS EPROM General Description Features The NM27P010 is a 1 Mbit POP EPROM configured as 128k x 8. It's designed to simplify microprocessor interfacing while remaining compatible with standard EPROMs. It can