D1 INTERNATIONAL Search Results

30N120D1

Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1
Contextual Info: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1

30n120

Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600
Contextual Info: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1

30N120

Abstract: 30n120d
Contextual Info: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

IRFHS9351

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) d A T OP VIEW S1 1 6 D1 S2 D1 G1 2 FET 1 D1 D1 D2 5 G2 D2 D2 3 G2 4 S2 D2 FET 2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

Contextual Info: PD - 97572B IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) T OP VIEW S1 1 D1 6 D1 G2 S2 D1 ID -3.4 (@TC = 25°C) d G1 2 FET 1 D1 D2 5 G2 A D2 D2 3 G1 4 S2 S1 D2 FET 2 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application

car battery charger

Abstract: NTHD4N02 NTHD4P02 NTLJF3117P NTLJF3118N NTLJF4156N NTMSD3P102 NTMSD3P303 NTMSD6N303 mosfet with schottky body diode
Contextual Info: L1 Vin Vout C1 D1 Q1 ON/OFF C2 FETKY GND GND L1 Vin Vout FETKY C1 Typical Uses for FETKY Devices Vin ON/OFF GND C1 ON/OFF Q1 D1 C2 Vout Q1 C2 GND R1 Protection Circuit GND GND FETKY The Schottky diode actually provides a by-pass channel and keeps D1 reverse

Contextual Info: C B A REV. 01 02 03 1 D2 D2 D2 D1 D1 D1 F E D 04 05 MODIFICATION. DATE DRN 30/ 06/ 04 NEW DRAWING PART REF,QTY CHANGED 24/ 09/ 04 04/ 10/ 04 DUAL DIMENSIONING ADDED 11/ 01/ 05 ECN 05-012 22/ 02/ 06 ECN 06-034 NJB NJB NJB 1 NJB OW RESISTOR L L L CERAMIC BEADS

IRF7

Contextual Info: PD - 9.1606A International Rectifier I"R IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated N-CHANNEL MOSF ET si n r - H E D1 1a r ; H E D1 S2 Q T ; n e D2

IEC EN 60947- 3 VDE 0660 107

Abstract: V3N A-NF3-B-SI VDE 0660 IP 65 VN 16 NACH VDE 0660 PRESSURE SWITCH 32-F3-B-SI ET VDE 0660 ac3 50-F4-B-SI 80-F4-B-SI 50-PF4-B-SI AC20A
Contextual Info: Nockenschalter Cam switches General Information Allgemeine Informationen 50 - 67 Cam switches Nockenschalter 68 - 88 Cam switches D1 Nockenschalter D1 Cam switches B2N Nockenschalter B2N Dimensions Maßzeichnungen 89 90 91 - 106 49 VN-Reihe VN series Technische Informationen

Contextual Info: C B A REV. 01 02 03 1 D2 D2 D2 D1 D1 D1 F E D 04 05 MODIFICATION. DATE DRN 30/06/04 NEW DRAWING PART REF,QTY CHANGED 24/09/04 04/10/04 DUAL DIMENSIONING ADDED 11/01/05 ECN 05-012 22/02/06 ECN 06-034 NJB NJB NJB 1 NJB OW RESISTOR L L L CERAMIC BEADS 2 2 STYLE 2

vishay melf

Contextual Info: MELF Plastic VISHAY Vishay Semiconductors MELF Plastic Package Dimensions in Inches mm SOLDERABLE ENDS 1st BAND D2 0.022 (0.56) 0.018 (0.46) 0.205 (5.2) 0.185(4.7) D2 = D1 +- 0.008 (0.20) D1= 0.105 0.095 (2.67) (2.41) 0.022 (0.56) 0.018 (0.46) 0.049 (1.25)

ZMM120

Abstract: ZMM2V0 zener diode 3.6V SOD80 zener 200 mW 100V zmm4v7 diode ZENER zmm3v6 DO-213AA ZMM10 ZMM11 ZMM13
Contextual Info: ZMM1 thru ZMM 200 00 SURFACE MOUNT ZENER DIODES DO-213AA / MINI MELF SOLDERABLE ENDS CATHODE BAND D1= 0.066 1.676 0.060(1.524) D2 0.022(0.559) 0.016(0.406) 0.145(3.683) 0.131(3.327) D2=D1 +0 -0.008(0.20) Dimension in inches (millimeters ) FEATURES MECHANICAL DATA

IRF7313

Abstract: EIA-541 F7101 IRF7101 MS-012AA MOSFET IRF7313
Contextual Info: PD - 91480B IRF7313 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier

IRF7343

Contextual Info: PD -91709A IRF7343 l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 P-CHANNEL MOSFET Description Fifth Generation HEXFETs from International Rectifier

IRF7343IPBF

Abstract: NCH 60V 20A mosfet p-channel 12v
Contextual Info: PD - 96088 IRF7343IPbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91480B IRF7313 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 30V RDS on = 0.029Ω Top View Description Fifth Generation HEXFETs from International Rectifier

IRF p-CHANNEL

Abstract: mosfet p channel irf irf7343pbf IRF7343P IRF P CHANNEL MOSFET P-Channel irf f7101 P-CHANNEL 30V (DS) MOSFET
Contextual Info: PD - 92547 IRF7343PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Free HEXFET Power MOSFET S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 Description Fifth Generation HEXFETs from International Rectifier

f7101

Abstract: IRF7316 91505B
Contextual Info: PD - 9.1505B IRF7316 l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS = -30V RDS on = 0.058Ω Top View Description Fifth Generation HEXFETs from International Rectifier

connector 12 pin micro usb

Abstract: micro USB B 5pin SOT23-6 MARKING be Marking D2 SOT23-6 Zener diode sot23-5 california micro df2 diode Zener diode sot23-5 A1 SOT23 PART marking d2 CA SOT23-5
Contextual Info: PACUSB-D1/D2/D3 USB Downstream Port Terminator Features Product Description • The PACUSB-D1/D2/D3 is a single-channel USB downstream-port termination network. It integrates EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as the

SOT23-6 MARKING be

Abstract: MO-178 MO-203 SC70-5 marking H.E SOT23-5 PACUSB-D2Y5R
Contextual Info: USB Downstream Port Terminator PACUSB-D1/D2/D3 Features Product Description • The PACUSB-D1/D2/D3 is a single-channel USB downstream-port termination network. It integrates EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as

SOT23-5 JEDEC

Abstract: Marking D2 SOT23-6 MO-178 MO-203 SC70-5 df2 diode MICRO USB b Connector pcb SCHEMATIC usbdfxxw5 marking 564 sot23-6 MARKING E.5 SOT23-5
Contextual Info: PACUSB-D1/D2/D3 USB Downstream Port Terminator Features Product Description • The PACUSB-D1/D2/D3 is a single-channel USB downstream-port termination network. It integrates EMI/RFI filter components R1 and C1, as recommended by the USB specification as well as the

Contextual Info: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier