D1003 Search Results

POWER 28V 3A 60W

Abstract: D1003UK 1776
Contextual Info: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: IUI TetraFET ËFFË SEME D1003UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6 0 W -2 8 V -1 0 0 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H K I J • SUITABLE FOR BROAD BAND APPLICATIONS

D1003UK

Abstract: 6255
Contextual Info: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

D1003UK

Contextual Info: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 100MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

W343

Abstract: N7555 75553 75551 D1003 FW343 7555-1
Contextual Info: 注文コード No.N 7 5 5 5 FW343 No. N7555 D1003 新 FW343 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ モータドライブ用 特長 ・低オン抵抗。 ・超高速スイッチング。 ・4V 駆動の N チャネルおよび P チャネル MOS 形電界効果トランジスタを 1 パッケージに 2 素子内蔵した複

Contextual Info: bOE D • Û133107 SEMELAB PLC □DDDC114 T7 2 ■ SMLB - " SEMELAB D1003UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON D M O S RFFET 60W -28V-100M H z SINGLE ENDED M ECH AN ICA L DATA

Contextual Info: TetraFET D1003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1003UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

D1003UK

Contextual Info: TetraFET D1003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 60W – 28V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: IUI TetraFET =MMË SEM E D1003UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6 0 W -2 8 V -1 7 5 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN H K I J • SUITABLE FOR BROAD BAND APPLICATIONS

ASTM-D882

Abstract: pANDUIT f1.5X4LG6 C75L F1.5X4LG6
Contextual Info: PANDUCT Type C Wiring Duct Cover with Protective Film ® SPECIFICATION SHEET specifications PANDUCT ® Type C Wiring Duct Cover with Protective Film 0.50" cover: C.5*6-F 0.75" cover: C.75*6-F 1" cover: C1*6-F 1.5" cover: C1.5*6-F 2" cover: C2*6-F 3" cover:

SN54LVT16952

Abstract: LVT16952 SN74LVT16952
Contextual Info: SN54LVT16952, SN74LVT16952 3.3-V ABT 16-BIT REGISTERED TRANSCEIVERS WITH 3-STATE OUTPUTS _ SCBS151A - MAY 1992 - REVISED JANUARY 1994 State-of-the-Art Advanced BiCMOS Technology ABT Design for 3.3-V Operation and Low-Static Power

M83519

Abstract: MIL-S-83519 Raychem installation procedure rcps-100-70 SAE-AS83519 raychem RPIP 655-00-D NAS1745 D-103-31 raychem rt-1404 RAYCHEM D-103-00 raychem solder sleeve d-142-51
Contextual Info: Shield Termination SolderSleeve Shield Terminators Product Facts • Transparent insulation sleeve provides encapsulation, inspectability, strain relief, and insulation ■ Prefluxed solder preform provides a controlled soldering process ■ One-piece design offers

elo touch

Contextual Info: IntelliTouch Surface Acoustic Wave For High-Use Applications Elo’s IntelliTouch touchscreens, utilizing patented flat profile surface acoustic wave technology, are the pictureperfect, precision touch solution for high-use applications. The new flat profile technology has tiny transducers on

submersible motor winding formula

Abstract: 3G3MV A2007 Manual 3G3MV-A4040 3G3MV manual inverter omron sysdrive 3G3MV-A2004
Contextual Info: Cat. No. I527-E2-02 USER’S MANUAL SYSDRIVE 3G3MV Multi-function Compact Inverter Thank you for choosing this SYSDRIVE 3G3MV-series product. Proper use and handling of the product will ensure proper product performance, will lengthen product life, and may prevent possible accidents.

MCP67MV

Abstract: RTS5117 MCP67MV- A2 12VSUS IT8511TE D1703 D1804 D1803 asus F9DC
Contextual Info: 5 4 3 2 1 F9DC BLOCK DIAGRAM THERMAL SENSOR G781 BATTERY TYPE Page 5 D D 3S1P 3S2P FAN CTRL Page 5 AC & BAT CON Page 47 CPU S1g1 GDDR2 16Mx16 x4 DDR2 16M*16-2.5 1.8V Page42 INFINEON DDR2 SDRAM 667MHz Page2,3,4 DDR2 667 SODIMM X2 +1.8V +0.9VS Page11,12,13

attansic f1

Abstract: RC415M Attansic l1 RC415ME asus attansic lan schematic Attansic f2 PAD381 PT6319 d1106
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

Attansic L1

Abstract: pr6239 RC415M RC415ME ICS951463AGLFT ASUS attansic f1 RTS5117 C3902 ICS951463
Contextual Info: 5 4 3 F5R BLOCK DIAGRAM 2 1 CPU Yonah Single core Yonah Celeron D D Page 2 AGTL+ 133/166MHz LVDS Page 10 DDR2 533/667 RC415ME CRT Single Channel PCIE Page 11 DUAL DDR2 SO-DIMM Page 12,13,14 Page 5,6,7,8,9 PCIE X4 C C MINICARD SB600 Page 28 LAN 10/100 ATTANSIC L2

tps51620

Abstract: alc889 bq24721 tps51125 ITE8512E C5134 TI_BQ24721C_QFN_32P INVENTEC JMB385 fds8884
Contextual Info: www.kythuatvitinh.com KiliManjaro CS Build A02 2008.02.04 Digitally signed by dd DN: cn=dd, o=dd, ou=dd, email=dddd@yahoo. com, c=US Date: 2009.11.29 17:18:29 +07'00' EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX

tps51125

Abstract: alc889 c2233 fds8884 bq24721 BQ24721C Inventec IT8512E tps51125 kbc AR8121
Contextual Info: TETON2 DDRIII-Pre MV BUILD 2008.06.18 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX XXXXXXXXXXXX P/N INVENTEC TITLE VER : TETON2 SIZE CODE A3 CS SHEET DOC. NUMBER REV 1310A22077-0-MTRA02 1 OF 53

sanyo 235

Abstract: MCH3445 D1003
Contextual Info: Ordering number : ENN7602 MCH3445 N-Channel Silicon MOSFET MCH3445 Ultrahigh-Speed Switching Applications Features • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. unit : mm 2167A [MCH3445] 0.3 0.25 • Package Dimensions 0.15 0.25 2 1 0.65

ferrite core ER25

Abstract: idq06 ft-82 D1017UK ER-25 enamalled wire current
Contextual Info: TetraFET D1017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H J I K DM • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET D1009UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 500MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

2SK3707

Contextual Info: 2SK3707 Ordering number : ENN7706 2SK3707 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C