D1084 Search Results

Contextual Info: lili TetraFET =X= lili SEME D1084UK LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4 W -2 8 V -2 0 0 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND

Contextual Info: TetraFET III iFFi I h D1084UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 965 -k 1 10.66 4.19 4.82 -4 .8 2 J 5.33 3.83 Dia. 4.08 1.39 66 T 3.'42 1.01 1.52 i GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W - 28V - 200MHz

D1084UK

Abstract: d1084 dmos rf fet 4w 28v
Contextual Info: TetraFET D1084UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4.19 4.82 1.14 1.39 2.66 3.42 1.01 Rad. 1.52

Contextual Info: TetraFET SEME D1084UK LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4.19 4.82 1.14 1.39 2.66 3.42

D1084UK

Abstract: dmos rf fet 4w 28v
Contextual Info: TetraFET D1084UK SEME LAB ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm inches 9.65 10.66 4.82 5.33 3.83 Dia. 4.08 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED 4.19 4.82 1.14 1.39 2.66 3.42

BA1A4Z

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

PA33

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with BA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Transistor NEC 30

Contextual Info: DATA SHEET COMPOUND TRANSISTOR CE1N2R on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE1N2R is a transistor of on-chip high hFE resistor PACKAGE DRAWING UNIT: mm incorporating dumper diode in collector to emitter and zener diode

VEBO-15V

Abstract: d1084
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer ADF4159 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution

Contextual Info: Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer ADF4159 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution

AD8283

Abstract: Rm2 tr1 FMCW Radar FMCW circuit
Contextual Info: Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer ADF4159 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

DVP-40EH

Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
Contextual Info: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.

Contextual Info: Direct Modulation/Fast Waveform Generating, 13 GHz, Fractional-N Frequency Synthesizer ADF4159 Data Sheet FEATURES GENERAL DESCRIPTION RF bandwidth to 13 GHz High and low speed FMCW ramp generation 25-bit fixed modulus allows subhertz frequency resolution

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

Contextual Info: Tyco Electronics Corporation 300 Constitution Drive Menlo Park, CA 94025 USA Specification This Issue: Date: Replaces: RW-2019 ISSUE 1 November 16, 2005 None Raychem S1297 and /97 Hot Melt Adhesive 1.0 SCOPE This specification covers the requirements for one type of hot melt adhesive for use with Raychem sleeving

TD-6161

Abstract: PA33 TCMT-c
Contextual Info: -T — S 7 • 5 / — h NEC C o m p o u n d T ran sis to r A Q 1 '> 'J - X W t % F*g M P N p x lJ □ V > 7 > i> 7 * 9 m it m o ic ^ ib , -t — ;?• W / A K l lif i ^ , 2 A i T c o ^ a K 7 4 7 "* M tÈ T "t„ T X f f iii^ f t jt L T ^ i- to AQ1'><; - X - K *

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

transistor D2058

Abstract: K D2058 Y transistor D2041 D2058 transistor transistor K D2059 D2061 transistor KPC-CC01 d2058 D2061 Transistor D2010
Contextual Info: PLEASE READ PRIOR TO INSTALLATION FOR SAFETY.  AC input power must be disconnected before any wiring to the AC motor drive is made. DANGER  Even if the power has been turned off, a charge may still remain in the DC-link capacitors with hazardous voltages before the POWER LED is OFF. Please do

transistor d1047

Abstract: transistor m1104 D1047 TRANSISTOR D1960 Delta WPLSoft sample d1266 D1265 D1071 power transistor m1104 transistor m1104 185
Contextual Info: DVP-ES2 Operation Manual: Programming Table of Contents Chapter 1 – PLC Concepts 1.1 PLC Scan Method .1-2 1.2 Current

equivalent transistor D1555

Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
Contextual Info: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1

DVP-10SX

Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
Contextual Info: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3