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    D1223 Search Results

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    D1223 Price and Stock

    Newhaven Display International NHD-12232KZ-NSW-BBW-P

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    DigiKey NHD-12232KZ-NSW-BBW-P Box 8,766 1
    • 1 $15.32
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    Mouser Electronics NHD-12232KZ-NSW-BBW-P 598
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    RS NHD-12232KZ-NSW-BBW-P Bulk 1
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    TME NHD-12232KZ-NSW-BBW-P 6 1
    • 1 $15.3
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    Master Electronics NHD-12232KZ-NSW-BBW-P 543
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    Newhaven Display International NHD-12232AZ-FSW-GBW

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    DigiKey NHD-12232AZ-FSW-GBW Bulk 4,668 1
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    Mouser Electronics NHD-12232AZ-FSW-GBW 54
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    RS NHD-12232AZ-FSW-GBW Bulk 1 1
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    Master Electronics NHD-12232AZ-FSW-GBW 200
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    Neutron USA NHD-12232AZ-FSW-GBW 50
    • 1 $90.89
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    Schurter Electronic Components DD12.2321.111

    PWR ENT MOD RCPT IEC320-C14 PNL
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    DigiKey DD12.2321.111 Box 162 1
    • 1 $25.77
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    Avnet Americas DD12.2321.111 Box 13 Weeks, 5 Days 20
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    Newark DD12.2321.111 Bulk 20
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    TME DD12.2321.111 1
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    Avnet Abacus DD12.2321.111 12 Weeks 20
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    Master Electronics DD12.2321.111 20
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    Sager DD12.2321.111 1
    • 1 $30.32
    • 10 $28.24
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    Newhaven Display International NHD-12232AZ-FL-YBW

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    DigiKey NHD-12232AZ-FL-YBW Box 47 1
    • 1 $16.78
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    • 100 $13.2562
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    Mouser Electronics NHD-12232AZ-FL-YBW 122
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    RS NHD-12232AZ-FL-YBW Bulk 1
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    Master Electronics NHD-12232AZ-FL-YBW
    • 1 $17.48
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    Schurter Electronic Components DD12.2321.131

    PWR ENT MOD RCPT IEC320-C14 PNL
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    DigiKey DD12.2321.131 Bulk 8 1
    • 1 $26.55
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    D1223 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1223

    Abstract: 2SD1223 a4503 2SB908
    Text: D1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ D1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


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    PDF 2SD1223 2SB908 20070701-JA D1223 2SD1223 a4503 2SB908

    D1223

    Abstract: 2SB908 2SD1223
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD1223 2SB908. D1223 2SB908 2SD1223

    Untitled

    Abstract: No abstract text available
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD1223 2SB908.

    D1223

    Abstract: No abstract text available
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD1223 2SB908. D1223

    Untitled

    Abstract: No abstract text available
    Text: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder


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    PDF VSC6134 709-compliant GR253-compliant STS192 16-bit STS192/10 97-free 897-pin VMDS-10185 VSC6134

    Untitled

    Abstract: No abstract text available
    Text: 1 111111111111111 1111111 1 111111111111111 1 111111111111111 1 111111111111111 1 1 123456789ABCDEF61EEE1FA11111111 1 11111111 1 11111 1 1 BEB12AA 123314567891A758BCD814E1F3D167D1F1C5A36 E1A12AC1 7!! "C#$%&'1 7!!1 29*1)1+1#$B1EBEE


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    PDF 23456789ABCDEF61 123314567891A758BCD814E1F3 167D1 12AC1 1469D815 87D691 1D69E D145678 D7D167D1+

    Untitled

    Abstract: No abstract text available
    Text: 3 GHz Variable Gain LNA with Integrated ½ W Driver Amplifier ADL5246 Data Sheet FEATURES GENERAL DESCRIPTION RF output frequency range: 0.6 GHz to 3 GHz Output IP3: 37 dBm at 2.2 GHz Output P1dB: 28 dBm at 2.2 GHz Noise figure of input amplifier: 1 dB at 2.2 GHz


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    PDF ADL5246 32-lead, ADL5246 5-29-2013-A 32-Lead CP-32-20) ADL5246ACPZN-R7 ADL5246-EVALZ CP-32-20

    Untitled

    Abstract: No abstract text available
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD1223 2SB908.

    DVP-40EH

    Abstract: DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3
    Text: DVP-PLC Application Manual Programming Industrial Automation Headquarters Delta Electronics, Inc. Taoyuan Technology Center No.18, Xinglong Rd., Taoyuan City, Taoyuan County 33068, Taiwan TEL: 886-3-362-6301 / FAX: 886-3-371-6301 Asia Delta Electronics (Jiangsu) Ltd.


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    PDF 113-API API156 296-API DVP-40EH DVP-10SX DVP28SV11R2 DVP-32EH DVP14Ec DVP80EH00R3 DVP40es DVP-14SS DVP-08SN DVP64EH00R3

    Untitled

    Abstract: No abstract text available
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


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    PDF 2SD1223 2SB908.

    d1223

    Abstract: 2SB908 2SD1223
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD1223 2SB908. d1223 2SB908 2SD1223

    Untitled

    Abstract: No abstract text available
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


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    PDF 2SD1223 2SB908.

    equivalent transistor D1555

    Abstract: transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557
    Text: PLC PLC DVP-PLC Application Manual 【Programming】 Table of Contents Chapter 1 Basic Principles of PLC Ladder Diagram Foreword: Background and Functions of PLC . 1-1 1.1 The Working Principles of Ladder Diagram . 1-1


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    PDF 32-bit 32-bit 16-bit K100000 equivalent transistor D1555 transistor d1555 transistor d1047 d1555 transistor TRANSISTOR DATASHEET D1555 delta plc DVP 14SS DVP-40EH DVP-10SX d1555 D1557

    DVP-10SX

    Abstract: DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX
    Text: PLC www.delta.com.tw/industrialautomation PLC ASIA Delta Electronics, Inc. Taoyuan1 31-1, Xingbang Road, Guishan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Delta Electronics Jiang Su Ltd. Wujiang Plant3


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    PDF K100000 DVP-10SX DVP-14SS delta plc DVP 14SS DVP-32EH DVP-80EH DVP-64EH DVP-32ES DVP-48EH DVP-60ES DVP-20EX

    D1223

    Abstract: a4503 2SB908 2SD1223
    Text: D1223 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ D1223 ○ スイッチング用 ○ ハンマドライブパルスモータドライブ用 ○ 電力増幅用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


    Original
    PDF 2SD1223 2SB908 D1223 a4503 2SB908 2SD1223

    D1223

    Abstract: A4503 2SD1223 2SB908
    Text: D1223 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (darlington) D1223 Switching Applications Hammer Drive, Pulse Motor Drive Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)


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    PDF 2SD1223 2SB908. D1223 A4503 2SD1223 2SB908

    ma6351

    Abstract: LE-24T ZO 607MA A82496 290446 EM 5135 diode 522110 jp 486TM 241429 dm4021
    Text: INTEL CORP -CUP/PRPHLSJ S7E D • 4 fl2 bl 7 5 01522147 t»23 ■ in te l Pentium Processor User's Manual Volume 2: 82496 Cache Controller and 82491 Cache SRAM Data Book NOTE: The Pentium™ Processor User's Manual consists of three books: Pentium™ Processor Data Book, Order Number 241428; the


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    PDF 4fl2bl75 ma6351 LE-24T ZO 607MA A82496 290446 EM 5135 diode 522110 jp 486TM 241429 dm4021

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY 180 GaAs MMIC • • • • • Power amplifier for DECT and PCS application Fully integrated 3 stage amplifier Operating voltage range: 2.7 to 6 V Overall power added efficiency 35 % Input matched to 50 £1, simple output match ESD: Electrostatic discharge sensitive device,


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    PDF Q68000-A8882 0E35bQS

    BY236

    Abstract: BY235 d25n12 PBY285 KD202A D237A D223B diode drr204 Diode D25N4 PBY267
    Text: a m a t e u m Lars Grallert Diodenvergleichsliste p e U ie 247 electrónica •Band 247 LA R S G R A L L E R T Diodenvergleichsliste M ILITÄ R V E R L A G D ER D EU TSCH EN D EM OKRATISCH EN R EP U B L IK G r a lle r t, L . : D io d e n v e rg le ic h s liste . B e r lin : M ilitä rv e rla g d e r D D R V E B , 1 9 9 0 . 112 S ., 127 B ild e r - ( e le c tr ó n ic a 2 4 7 )


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CGY60 GaAs MMIC • • • • • • • Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems Biased monolithic microwave 1C (MMIC) Matched to 50£2 for 1.7 to 2GHz Easily matchable to 50Q for lower frequencies


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    PDF CGY60 85GHz) Q62702G-39 fl235bD5 fi235bOS D1223CH