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    OMRON Industrial Automation E32-D14L

    SENSOR REFLECTIVE 110MM
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    DigiKey E32-D14L Bulk 1 1
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    Newark E32-D14L Bulk 53 1
    • 1 $274.17
    • 10 $246.76
    • 100 $225.11
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    KOA Speer Electronics Inc SLN3TTED14L3F

    SURFACE MOUNT MOLDED RESISTOR
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    DigiKey SLN3TTED14L3F Reel 1,000
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    Mouser Electronics SLN3TTED14L3F
    • 1 $1.23
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    Sumida Corporation CDRH4D14LDNP-101MC

    FIXED IND 100UH 320MA 1.35OHM SM
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    DigiKey CDRH4D14LDNP-101MC Reel 1,000
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    Avnet Americas CDRH4D14LDNP-101MC Reel 1,000
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    Mouser Electronics CDRH4D14LDNP-101MC
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    Sumida Corporation CDRH4D14LDNP-330MC

    FIXED IND 33UH 560MA 420MOHM SMD
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    DigiKey CDRH4D14LDNP-330MC Reel 1,000
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    Avnet Americas CDRH4D14LDNP-330MC Reel 1,000
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    Sumida Corporation CDRH4D14LDNP-4R7NC

    FIXED IND 4.7UH 1.9A 66 MOHM SMD
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    DigiKey CDRH4D14LDNP-4R7NC Reel 1,000
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    CDRH4D14LDNP-4R7NC Digi-Reel 1
    • 1 $0.88
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    CDRH4D14LDNP-4R7NC Cut Tape 1
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    Avnet Americas CDRH4D14LDNP-4R7NC Reel 42 Weeks, 6 Days 1,000
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    Mouser Electronics CDRH4D14LDNP-4R7NC 881
    • 1 $0.9
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    D14L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M390S2858DTU

    Abstract: M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design
    Text: M390S2858DTU PC133/PC100 Low Profile Registered DIMM M390S2858DTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858DTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858DTU consists of eighteen CMOS Stacked


    Original     		PDF M390S2858DTU PC133/PC100 M390S2858DTU 128Mx72 128Mx4, 128Mx4 400mil 18-bits M390S2858DTU-C1H M390S2858DTU-C1L M390S2858DTU-C7A M390S2858DTU-C7C 10D4L PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)


    Original     		PDF ST92F124/ST92F150/ST92F250 8/16-BIT J1850 14x14 TQFP64

    b1a12

    Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
    Text: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004


    Original     		PDF 256MB, 512MB, 168pin 256Mb 72-bit K4S510632E b1a12 PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A

    MA2180

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT2 KMM377S2858AT2 SDRAM DIMM Intel 1.1 ver. Base 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT2 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF KMM377S2858AT2 KMM377S2858AT2 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin MA2180

    MAX9951FCCB-D

    Abstract: MAX9951
    Text: 19-3247; Rev 5; 5/10 Dual Per-Pin Parametric Measurement Units The MAX9951/MAX9952 dual parametric measurement units PMUs feature a small package size, wide force and measurement range, and high accuracy, making the devices ideal for automatic test equipment (ATE) and other


    Original     		PDF MAX9951/MAX9952 MAX9951FCCB-D MAX9951

    Untitled

    Abstract: No abstract text available
    Text: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Rev. 0.1 May. 1999 KMM377S6428T3 PC100 Registered DIMM KMM377S6428T3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD


    Original     		PDF KMM377S6428T3 PC100 KMM377S6428T3 64Mx72 64Mx4, 64Mx4

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE KMM377S2858AT3 KMM377S2858AT3 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S2858AT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF KMM377S2858AT3 KMM377S2858AT3 128Mx72 128Mx4, 128Mx4 400mil 18-bits 24-pin

    MAX9951

    Abstract: MAX9951DCCB MAX9951FCCB MAX9952 MAX9952DCCB MAX9952FCCB national VF-GE 1212A-2
    Text: 19-3247; Rev 2; 4/06 Dual Per-Pin Parametric Measurement Units The MAX9951/MAX9952 dual parametric measurement units PMUs feature a small package size, wide force and measurement range, and high accuracy, making the devices ideal for automatic test equipment (ATE) and other


    Original     		PDF MAX9951/MAX9952 MAX9951/MAX9952 MAX9951 MAX9951DCCB MAX9951FCCB MAX9952 MAX9952DCCB MAX9952FCCB national VF-GE 1212A-2

    70P3337

    Abstract: 70P3307
    Text: PRELIMINARY DATASHEET IDT70P3307 IDT70P3337 1024K/512K x18 SYNCHRONOUS DUAL QDR-IITM Features ◆ 18Mb Density 1024K x 18 – Also available 9Mb Density (512K x 18) QDR-II x 18 Burst-of-2 Interface – Commercial: 233MHz, 250MHz Separate, Independent Read and Write Data Ports


    Original     		PDF IDT70P3307 IDT70P3337 1024K/512K 1024K 233MHz, 250MHz 18/9Mb IDT70P3307/70P3337 70P3337 70P3307

    cc2a

    Abstract: cc1b msr 2500 MAX9949 MAX9949DCCB MAX9949FCCB MAX9950 MAX9950DCCB MAX9950FCCB TQFP-EP
    Text: 19-3014; Rev 2; 3/09 Dual Per-Pin Parametric Measurement Units The MAX9949/MAX9950 dual parametric measurement units PMUs feature a small package size, wide force and measurement range, and high accuracy, making the devices ideal for automatic test equipment (ATE) and


    Original     		PDF MAX9949/MAX9950 MAX9949/MAX9950 cc2a cc1b msr 2500 MAX9949 MAX9949DCCB MAX9949FCCB MAX9950 MAX9950DCCB MAX9950FCCB TQFP-EP

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: nb 358 d
    Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)


    Original     		PDF ST92F124/ST92F150/ST92F250 8/16-BIT J1850 TQFP64 14x14 PQFP100 14x20 TQFP100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR nb 358 d

    TAA 611 T12

    Abstract: x48 chipset IDT72T6360 IDT72T6480 D25N3
    Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag


    Original     		PDF 128Mb 256Mb BB324) 72T6480 drw45 TAA 611 T12 x48 chipset IDT72T6360 IDT72T6480 D25N3

    Untitled

    Abstract: No abstract text available
    Text: M390S2858CT1 PC133 Registered DIMM M390S2858CT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2858CT1 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2858CT1 consists of eighteen CMOS Stacked


    Original     		PDF M390S2858CT1 PC133 M390S2858CT1 128Mx72 128Mx4, 128Mx4 400mil 18-bits

    CDC2510A

    Abstract: KMM375S3227BT-G0 KMM375S3227BT-G8 KMM375S3227BT-GH KMM375S3227BT-GL d11u D16U
    Text: Preliminary KMM375S3227BT SDRAM MODULE KMM375S3227BT SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM375S3227BT is a 32M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM375S3227BT consists of eighteen CMOS Stacked


    Original     		PDF KMM375S3227BT KMM375S3227BT 32Mx72 32Mx4, 32Mx4 400mil 18-bits 24-pin CDC2510A KMM375S3227BT-G0 KMM375S3227BT-G8 KMM375S3227BT-GH KMM375S3227BT-GL d11u D16U

    M377S6428AT3-C1H

    Abstract: M377S6428AT3-C1L
    Text: M377S6428AT3 PC100 Registered DIMM Revision History Revision 0.1 April 29, 2000 - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice." Rev. 0.1 Apr. 2000 M377S6428AT3 PC100 Registered DIMM M377S6428AT3 SDRAM DIMM (Intel 1.2 ver Base)


    Original     		PDF M377S6428AT3 PC100 M377S6428AT3 64Mx72 64Mx4, 64Mx4 M377S6428AT3-C1H M377S6428AT3-C1L

    KMM377S6428T3-GH

    Abstract: KMM377S6428T3-GL
    Text: KMM377S6428T3 PC100 Registered DIMM Revision History Revision 0.1 May. 24, 1999 - Changed "Detail C" in PCB Dimension. Revision 0.2 (April 29, 2000) - Added the description of " Staktek’s stacking technology is Samsung’s stacking technology of choice."


    Original     		PDF KMM377S6428T3 PC100 KMM377S6428T3 64Mx72 64Mx4, 64Mx4 KMM377S6428T3-GH KMM377S6428T3-GL

    TEC201

    Abstract: CORE F5A MARKING D55 mcl psc-2 dap 6 Marking R192 DAP 015 ST9 Compiler
    Text: ST92124xxx-Auto/ST92150xxxxx-Auto/ ST92250xxxx-Auto 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256


    Original     		PDF ST92124xxx-Auto/ST92150xxxxx-Auto/ ST92250xxxx-Auto 8/16-bit J1850 TEC201 CORE F5A MARKING D55 mcl psc-2 dap 6 Marking R192 DAP 015 ST9 Compiler

    D1U eeprom

    Abstract: KMM390S6428T-GA KMM390S6428T PC133 registered reference design
    Text: KMM390S6428T Preliminary PC133 SDRAM MODULE Revision History Revision 0 Feb. 1999 • PC133 first published REV. 0 Feb. 1999 Preliminary PC133 SDRAM MODULE KMM390S6428T KMM390S6428T SDRAM DIMM (RCC 0.8ver. Base) 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD


    Original     		PDF KMM390S6428T PC133 KMM390S6428T 64Mx72 64Mx4, D1U eeprom KMM390S6428T-GA PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: Package Physical Dimensions in inches mm Suggested PCB Pad Layout. .370 (9.40) MAX. .525 (13.34) EP7 SURFACE MOUNT Package .375 (9.53) MAX. .100 (2.54) TYP. .375 (9.53) MAX. .025 (0.64) .050 (1.27) TYP. .34 (8.6) .075 (1.905) TYP. .098 (2.50) .028 (0.70)


    Original     		PDF RS23X11 G16-L J14-L J16-L 16-Pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM377S3227BT2 SDRAM MODULE KMM377S3227BT2 SDRAM DIMM Intel 1.1 ver. Base 32Mx72 SDRAM DIMM with PLL & Register based on Stacked 32Mx4, 4Banks, 4K Ref., 3.3V SDRAMs with SPD FEATURE GENERAL DESCRIPTION • Perform ance range The Sam sung KM M 377S3227BT2 is a 32M bit x 72 S ynchro­


    OCR Scan     		PDF KMM377S3227BT2 KMM377S3227BT2 32Mx72 32Mx4, 377S3227BT2 377S3227BT2-G 18-bits 24-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM M375S3227BT SDRAM MODULE KMM375S3227BT SDRAM DIMM 32M x72 SDRAM DIMM with PLL & R egister based on Stacked 32M x4, 4B anks 4K Ref., 3.3V S D R AM s with SPD FEATURE G E N E R A L DESCRIPTION • Performance range The Samsung KMM375S3227BT is a 32M bit x 72 Synchro­


    OCR Scan     		PDF KMM375S3227BT M375S3227BT 400mil 18-bits 24-pin 168-pin 375S3227BT

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S6427T2 Revision History R e visio n 1 Feb. - 1999 Corrected CS Swapping in Block Diagram. REV. 1 Feb. 1999 Preliminary KMM377S6427T2 SDRAM MODULE KMM377S6427T2 SDRAM DIMM (Intel 1.1 ver. Base) 64M x72 SDR AM DIMM w ith PLL & R egister based on S tacked 64M x4, 4B anks, 4K Ref., 3.3V S D R A M s w ith SPD


    OCR Scan     		PDF KMM377S6427T2 KMM377S6427T2 377S6427T2 18-bits 24-pin 44S64037T

    CS5555

    Abstract: U555C CDC2510A
    Text: Preliminary KMM377S6427T1 SDRAM MODULE KMM377S6427T1 SDRAM DIMM Intel 1.0 ver. Base 64Mx72 SDRAM DIMM with PLL & Register based on Stacked 64Mx4, 4Banks 4K Ref., 3.3V SDRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM377S6427T1 is a 64M bit x 72 Synchro­


    OCR Scan     		PDF KMM377S6427T1 KMM377S6427T1 64Mx72 64Mx4, 64Mx4 400mil 18-bits 24-pin CS5555 U555C CDC2510A

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S6427T3 Revision History Revision 1 Feb. 1999 - C orrected CS S w apping in B lo ck Diagram . REV. 1 Feb 1999 ELECTRONICS Preliminary KMM377S6427T3 SDRAM MODULE KMM377S6427T3 SDRAM DIMM 6 4 M x 7 2 S D R A M D IM M w ith P L L & R e g is te r b a s e d on S ta c k e d 6 4 M x 4 , 4 B a n k s , 4 K R ef., 3 .3 V S D R A M s w ith S P D


    OCR Scan     		PDF KMM377S6427T3 KMM377S6427T3 377S6427T3 18-bits 24-pin 44S64037T