D16430 Search Results

4332 transistors

Abstract: D16430
Contextual Info: DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors developed PACKAGE DRAWINGS Unit: mm 1.5 −0.1 +0.2 for high-speed switching and features a very low collector-to-emitter

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sc4332 transistors

Abstract: 2SC4332 2SC4332-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTORS 2SC4332, 2SC4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4332 and 2SC4332-Z are mold power transistors PACKAGE DRAWING Unit: mm developed for high-speed switching and features a very low collector-to-emitter saturation voltage.

D16430

Abstract: 4332 transistors 2SC4332 2SC4332-Z
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4332,4332-Z NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING PACKAGE DRAWINGS Unit: mm 5.0 ±0.2 FEATURES 0.5 ±0.1 1 2 3 1.1 ±0.2 • Low collector saturation voltage VCE(sat) = 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)

D16430

Abstract: 2SC4332 2SC4332-Z
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid