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    D2021 Search Results

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    D2021 Price and Stock

    JRH Electronics NK-2D2-021-225-TH00-055

    NANO D CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NK-2D2-021-225-TH00-055 Bag 25 1
    • 1 $710.85
    • 10 $710.85
    • 100 $710.85
    • 1000 $710.85
    • 10000 $710.85
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    PEI Genesis ACS00AD20-21S-003

    AC 9C 8#16, 1#12 SKT RECP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ACS00AD20-21S-003 Bulk 14 1
    • 1 $31.78
    • 10 $27.55
    • 100 $19.07
    • 1000 $19.07
    • 10000 $19.07
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    PEI Genesis ACC00AD20-21S-003

    AC 9C 8#16, 1#12 SKT RECP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ACC00AD20-21S-003 Bulk 14 1
    • 1 $33.79
    • 10 $29.28
    • 100 $20.27
    • 1000 $20.27
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    PEI Genesis ACC06AD20-21S-003

    AC 9C 8#16, 1#12 SKT PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ACC06AD20-21S-003 Bulk 14 1
    • 1 $37.1
    • 10 $32.15
    • 100 $22.26
    • 1000 $22.26
    • 10000 $22.26
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    PEI Genesis ACS06AD20-21S-003

    AC 9C 8#16, 1#12 SKT PLUG
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ACS06AD20-21S-003 Bulk 14 1
    • 1 $35.09
    • 10 $30.41
    • 100 $21.05
    • 1000 $21.05
    • 10000 $21.05
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    D2021 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    D2021 Semelab METAL GATE RF SILICON FET Original PDF
    D2021UK Semelab Metal Gate RF Silicon FET Original PDF

    D2021 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE


    Original     		PDF D2021UK B62152A7

    D2021UK

    Abstract: PLC 168 h 6906
    Text: TetraFET D2021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE


    Original     		PDF D2021UK B62152A7 D2021UK PLC 168 h 6906

    D2021UK

    Abstract: No abstract text available
    Text: TetraFET D2021UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D2021UK D2021UK

    Untitled

    Abstract: No abstract text available
    Text: TetraFET D2021UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 – SOURCE


    Original     		PDF D2021UK B62152A7

    CL333

    Abstract: No abstract text available
    Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -5, -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six


    Original     		PDF MH64S72AWJA 208-BIT 864-WORD 72-BIT 10pin 95pin 11pin 124pin CL333

    D2018

    Abstract: D2017 Transformer EN60742 Transformer D2017 D2020 D2021 d2017 transistor D2019 d2022 transformer 230v 3VA application
    Text: DAGNALL ELECTRONICS LIMITED Shuttleworth Road, Elms Industrial Estate, Bedford. MK41 0EP UK TEL +44 0 1234 330077 FAX +44(0)1234 330088 E-mail sales@dagnall-electronics.com Iss 1 09/01/03 • 1 of 3 P R O D U C T D A T A S H E E T 2.3VA PCB MOUNTED ENCAPSULATED TRANSFORMER


    Original     		PDF EN60950 EN60742 EN61558 UL506 cUL506 UL94-V0 130oC D2018 D2017 Transformer EN60742 Transformer D2017 D2020 D2021 d2017 transistor D2019 d2022 transformer 230v 3VA application

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six


    Original     		PDF MH64S72AWJA 208-BIT 864-WORD 72-BIT 10pin 95pin 11pin 124pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This


    Original     		PDF MH28S72PJG 416-BIT 728-WORD 72-BIT 133MHz 100MHz 40pin

    MH32S72BBFA

    Abstract: MH32S72BBFA-7 MH32S72BBFA-8
    Text: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4


    Original     		PDF MH32S72BBFA 104-BIT 432-WORD 72-BIT 95pin MH32S72BBFA-7 100MHz MH32S72BBFA-7 MH32S72BBFA-8

    MH32S72DBFA

    Abstract: MH32S72DBFA-6
    Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This


    Original     		PDF MH32S72DBFA 104-BIT 432-WORD 72-BIT MH32S72DBFA-6 95pin 133MHz 40pin MH32S72DBFA-6

    MO-150

    Abstract: W223
    Text: W223 SDRAM Buffer -2 DIMM Features Key Specification • Ten skew-controlled CMOS outputs SDRAM0:9 • Supports two SDRAM DIMMs • Ideal for high performance systems designed around Intel’s latest Mobile chip set • I2C Serial configuration interface


    Original     		PDF 28-pin, 209-inch MO-150 W223

    MH32S72DBFA

    Abstract: MH32S72DBFA-6
    Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This


    Original     		PDF MH32S72DBFA 104-BIT 432-WORD 72-BIT MH32S72DBFA-6 95pin 133MHz 40pin MH32S72DBFA-6

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous


    Original     		PDF MH32S72BAFA 104-BIT 432-WORD 72-BIT 72-bit 85pin 94pin 95pin 10pin

    MH64S72QJA

    Abstract: MH64S72QJA-6
    Text: MITSUBISHI LSIs MH64S72QJA -6 4,831,838,208-BIT 64,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4


    Original     		PDF MH64S72QJA 208-BIT 864-WORD 72-BIT 95pin MH64S72QJA-6 133MHz 40pin MH64S72QJA-6

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,41 5,9 1 9,1 04-B IT 33,554,432-W O R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit S ynchronous DRAM stacked structural module. This consist of th irty -s ix industry standard 1 6 M x 4


    OCR Scan     		PDF MH32S72BBFA 72-BIT S-331-0 16/Jun.

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous


    OCR Scan     		PDF MH32S72BAFA 104-BIT 432-WORD 72-BIT 72-bit MH32S72BAFA-7 MH32S72BAFA-8 100MHz 100MHz

    Untitled

    Abstract: No abstract text available
    Text: M IT S U B IS H I LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-W O RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous


    OCR Scan     		PDF MH32S72BAFA 104-BIT 72-BIT 85pin 32S72B MIT-DS-0243-0

    D3031

    Abstract: No abstract text available
    Text: DP83265 PRELIMINARY National Semiconductor DP83265 BSI Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMACtm device and a host system. It provides a multi-frame, MAC-level interface to one or more


    OCR Scan     		PDF DP83265 DP83265 32-bit OP83265 D3031

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH32S72BBFA -6 2,41 5,9 1 9,1 04-B IT 33,554,432-W O R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit S ynchronous DRAM stacked structural module. This consist of th irty -s ix industry standard 1 6 M x 4


    OCR Scan     		PDF MH32S72BBFA 72-BIT MIT-DS-333-0 16/Jun.

    JXXX

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs e MH64S72QJA -7,-8 e°- 4,831,838,208-BIT 67,108,864-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY S o m e o f c o n te n ts are s u b je c t to c h a n g e w ith o u t n o tice . DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit


    OCR Scan     		PDF MH64S72QJA 208-BIT 864-WQRD 72-BIT MIT-DS-0332-0 16/Jun JXXX

    A8j1

    Abstract: smt LDR D2021 023243 D2429 EA1 SMD psp 1001 A8J1 smd cwi 1011 DP83241
    Text: 1991 £3 National Semiconductor PRELIMINARY February 1991 DP83265 BSI Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMAC tm device and a host system. It provides a multi-frame, MAC-level interface to one or more


    OCR Scan     		PDF DP83265 32-bit A8j1 smt LDR D2021 023243 D2429 EA1 SMD psp 1001 A8J1 smd cwi 1011 DP83241

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH64S72QJA -6 4 ,8 3 1 ,838,208-B IT 64,108,864-W Q RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Synchronous DRAM stacked structural module. This consist of th irty-six industry standard 32M x 4


    OCR Scan     		PDF MH64S72QJA 208-B 72-BIT 72-bit S-334-0 17/Jun.

    432w

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous


    OCR Scan     		PDF MH32S72BAFA 104-BIT 432-WORD 72-BIT 72-bit 100MHz MH32S72BAFA-7 MH32S72BAFA-8 432w