Untitled
Abstract: No abstract text available
Text: TetraFET D2021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE
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D2021UK
B62152A7
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D2021UK
Abstract: PLC 168 h 6906
Text: TetraFET D2021UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE
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D2021UK
B62152A7
D2021UK
PLC 168
h 6906
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D2021UK
Abstract: No abstract text available
Text: TetraFET D2021UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS
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D2021UK
D2021UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D2021UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 28V – 1GHz SINGLE ENDED H K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 – SOURCE
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D2021UK
B62152A7
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CL333
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -5, -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six
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MH64S72AWJA
208-BIT
864-WORD
72-BIT
10pin
95pin
11pin
124pin
CL333
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D2018
Abstract: D2017 Transformer EN60742 Transformer D2017 D2020 D2021 d2017 transistor D2019 d2022 transformer 230v 3VA application
Text: DAGNALL ELECTRONICS LIMITED Shuttleworth Road, Elms Industrial Estate, Bedford. MK41 0EP UK TEL +44 0 1234 330077 FAX +44(0)1234 330088 E-mail sales@dagnall-electronics.com Iss 1 09/01/03 • 1 of 3 P R O D U C T D A T A S H E E T 2.3VA PCB MOUNTED ENCAPSULATED TRANSFORMER
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EN60950
EN60742
EN61558
UL506
cUL506
UL94-V0
130oC
D2018
D2017
Transformer EN60742
Transformer D2017
D2020
D2021
d2017 transistor
D2019
d2022
transformer 230v 3VA application
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Untitled
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64S72AWJA -6,-7 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72AWJA is 67108864 - word x 72-bit Sy nchronous DRAM module. This consist of t hirty -six
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MH64S72AWJA
208-BIT
864-WORD
72-BIT
10pin
95pin
11pin
124pin
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Untitled
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH28S72PJG -5,-6,-7 9,663,676,416-BIT 134,217,728-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH28S72PJG is 134,217,728 - word x 72-bit Sy nchronous DRAM stacked structural module. This
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MH28S72PJG
416-BIT
728-WORD
72-BIT
133MHz
100MHz
40pin
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MH32S72BBFA
Abstract: MH32S72BBFA-7 MH32S72BBFA-8
Text: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 16M x 4
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MH32S72BBFA
104-BIT
432-WORD
72-BIT
95pin
MH32S72BBFA-7
100MHz
MH32S72BBFA-7
MH32S72BBFA-8
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MH32S72DBFA
Abstract: MH32S72DBFA-6
Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This
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MH32S72DBFA
104-BIT
432-WORD
72-BIT
MH32S72DBFA-6
95pin
133MHz
40pin
MH32S72DBFA-6
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MO-150
Abstract: W223
Text: W223 SDRAM Buffer -2 DIMM Features Key Specification • Ten skew-controlled CMOS outputs SDRAM0:9 • Supports two SDRAM DIMMs • Ideal for high performance systems designed around Intel’s latest Mobile chip set • I2C Serial configuration interface
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28-pin,
209-inch
MO-150
W223
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MH32S72DBFA
Abstract: MH32S72DBFA-6
Text: MITSUBISHI LSIs Preliminary Spec. Some contents are subject to change without notice. MH32S72DBFA -6 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72DBFA is 33554432 - word x 72-bit Sy nchronous DRAM stacked structural module. This
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MH32S72DBFA
104-BIT
432-WORD
72-BIT
MH32S72DBFA-6
95pin
133MHz
40pin
MH32S72DBFA-6
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous
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MH32S72BAFA
104-BIT
432-WORD
72-BIT
72-bit
85pin
94pin
95pin
10pin
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MH64S72QJA
Abstract: MH64S72QJA-6
Text: MITSUBISHI LSIs MH64S72QJA -6 4,831,838,208-BIT 64,108,864-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Sy nchronous DRAM stacked structural module. This consist of thirty -six industry standard 32M x 4
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MH64S72QJA
208-BIT
864-WORD
72-BIT
95pin
MH64S72QJA-6
133MHz
40pin
MH64S72QJA-6
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72BBFA -7,-8 2,41 5,9 1 9,1 04-B IT 33,554,432-W O R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit S ynchronous DRAM stacked structural module. This consist of th irty -s ix industry standard 1 6 M x 4
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MH32S72BBFA
72-BIT
S-331-0
16/Jun.
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous
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MH32S72BAFA
104-BIT
432-WORD
72-BIT
72-bit
MH32S72BAFA-7
MH32S72BAFA-8
100MHz
100MHz
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-W O RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous
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MH32S72BAFA
104-BIT
72-BIT
85pin
32S72B
MIT-DS-0243-0
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D3031
Abstract: No abstract text available
Text: DP83265 PRELIMINARY National Semiconductor DP83265 BSI Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMACtm device and a host system. It provides a multi-frame, MAC-level interface to one or more
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DP83265
DP83265
32-bit
OP83265
D3031
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72BBFA -6 2,41 5,9 1 9,1 04-B IT 33,554,432-W O R D BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BBFA is 33554432 - word x 72-bit S ynchronous DRAM stacked structural module. This consist of th irty -s ix industry standard 1 6 M x 4
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MH32S72BBFA
72-BIT
MIT-DS-333-0
16/Jun.
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JXXX
Abstract: No abstract text available
Text: MITSUBISHI LSIs e MH64S72QJA -7,-8 e°- 4,831,838,208-BIT 67,108,864-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY S o m e o f c o n te n ts are s u b je c t to c h a n g e w ith o u t n o tice . DESCRIPTION The MH64S72QJA is 67108864 - word x 72-bit
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MH64S72QJA
208-BIT
864-WQRD
72-BIT
MIT-DS-0332-0
16/Jun
JXXX
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A8j1
Abstract: smt LDR D2021 023243 D2429 EA1 SMD psp 1001 A8J1 smd cwi 1011 DP83241
Text: 1991 £3 National Semiconductor PRELIMINARY February 1991 DP83265 BSI Device FDDI System Interface General Description Features The DP83265 BSI device implements an interface between the National FDDI BMAC tm device and a host system. It provides a multi-frame, MAC-level interface to one or more
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DP83265
32-bit
A8j1
smt LDR
D2021
023243
D2429
EA1 SMD
psp 1001
A8J1 smd
cwi 1011
DP83241
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH64S72QJA -6 4 ,8 3 1 ,838,208-B IT 64,108,864-W Q RD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH64S72QJA is 64108864 - word x 72-bit Synchronous DRAM stacked structural module. This consist of th irty-six industry standard 32M x 4
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OCR Scan
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PDF
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MH64S72QJA
208-B
72-BIT
72-bit
S-334-0
17/Jun.
|
432w
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72BAFA -7,-8 2,415,919,104-BIT 33,554,432-WORD BY 72-BIT Synchronous DYNAMIC RAM DESCRIPTION The MH32S72BAFA is 33554432 - word x 72-bit Synchronous DRAM stacked structural module. This consist of thirty-six industry standard 16M x 4 Synchronous
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OCR Scan
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MH32S72BAFA
104-BIT
432-WORD
72-BIT
72-bit
100MHz
MH32S72BAFA-7
MH32S72BAFA-8
432w
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