D220 Search Results

LA1111

Abstract: LA1111P CL 2181 D220 3L05 CL 2182 K235
Contextual Info: L NaG2 1 8 C 1 1 1 1 P = t J D220 m oa A FM I F T V S I F ffi -•î:.\ NaC2 18B ¿ í L i ' *. T < Ti £ U • X . V"‘%>•••••-. ':>■ ./ /• / / •* m r *> * . • « - ^ : ^ : ^ / T a = 2 5 ’c Vqç max 8-7 rvjm i± /Î/' v ó- 7 P,j raax

Contextual Info: TetraFET D2205UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2205UK

Contextual Info: TetraFET D2205UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 7.5W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G

Contextual Info: TetraFET D2203UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL B H C 2 3 G 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M O J K • SUITABLE FOR BROAD BAND APPLICATIONS

t4 and "0560"

Abstract: 2626
Contextual Info: TetraFET D2203UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL B H C 2 3 G 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M O J K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET iF Fi INI D2202UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V- 1 GHz SINGLE ENDED H typ *• A B t D (2 pis) (2 pis) H ■4J ► FEATURES T A I" *A A M I • SIMPLIFIED AMPLIFIER DESIGN

D2201UK

Abstract: T36X
Contextual Info: TetraFET D2201UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G

D2204UK

Abstract: d2204
Contextual Info: TetraFET D2204UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 900MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N DT PIN 1

D2201UK

Contextual Info: TetraFET D2201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED C N ty p  A B ! D ( 2 p ls ) F ( 2 p ls ) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

78L05A

Abstract: A78L12 78L10C A78L06 78l05c 78L15A 78L12A 78L05A 8 terminal 78L09ACM A78L
Contextual Info: SERIES UA78L00 POSITIVE V O LTAG E REGULATORS D2203, JANUARY I976-R E V IS E D FEBRUARY 1988 3-Terminal Regulators • Output Currant Up to 100 mA • No External Components • Internal Thermal Overload Protection • Internal Short-Circuit Limiting • Direct Replacement for Fairchild pA78L00

Contextual Info: LOE D SEMELAB • Ô1331Ô7 PLC 0000=174 447 “- I SNLB r-si-^s SEMELAB D2203UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 5 W -1 2 -5 V - 1GHz SINGLE ENDED MECHANICAL DATA Dimensions FEATURES

Contextual Info: MM 0 1 3 3 1 8 7 0 0 0 0 ^ 7 2 b?4 « S I I L B bOE D nr^v-z-S _ _ SEMELAB SEHELAB PLC _ _ _ _ _ _ D2201UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2-5 W -1 2 -5 V - 1GHz SINGLE ENDED MECHANICAL DATA Dimensions FEATURES

D2202UK

Contextual Info: TetraFET D2202UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D32 DIAC

Abstract: DIAC D3202U 03202u IN3892 MAA 723 IN3899 D3202U in3880 D3202y diac D3202Y
Contextual Info: Rectifier Product Matrix continued Fast-Recovery Types V T 'o 50 100 200 300 400 500 600 800 1000 m DO-15 DO-26 A «FSM V RRM<V > Î if Î RCA Rectifiers b. DO-4 35A D2601F D2601 _ ! D2601B 1A 50A D2201 F D2201A D2201B D2601 D D2201D D2601M D2601 N D2201M

DIAC D3202U

Abstract: MAA 723 D3202U D3202y rca diac in3880 rca d3202u D3202Y D3202y diac rca 728 DIAC 35A
Contextual Info: Rectifier Product Matrix continued Fast-Recovery Types V T 'o 50 100 200 300 4 00 500 600 800 100 0 m D O -15 DO-26 A «FSM V RRM<V > Î if Î RCA Rectifiers b. DO-4 35A D2601F D 2 6 0 1 _ ! D 2 6 0 1B 1A 50A D2201 F D2201A D 2201B D2601 D D 2201D D2601M

8192X32

Abstract: SRAM timing
Contextual Info: d220002 8192X32, Mux 16, Drive 3, Non-Pipelined High-Speed Single-Port Synchronous SRAM Features Memory Description • Precise Optimization for Infineon’s C9DD1 0.20µm The 8192X32 SRAM is a high-performance, synchronous single-port, 8192-word by 32-bit memory designed to

D428N

Abstract: D471N D2201N D1049N D2228N D4457N D448N D5807N D5809N D660N
Contextual Info: Overview Rectifier in Disc Housings VRRM – Concept 9000 V D471N D2601N 6500 V D711N D1481N D749N D1800N D3001N 5800 V 4800 V 1500 VRMS 4600 V D1809N Ceramic disc D2201N 4500 V D1069N 4400 V Epoxy disc 4000 V D3501N D849N D269N 3600 V 1000 VRMS High Power - Discs

Contextual Info: TetraFET D2204UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 900MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N DT PIN 1 SOURCE (COMMON) PIN 2

Contextual Info: TetraFET D2204UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 900MHz SINGLE ENDED C D 2 pls E 1 B 2 3 A G 5 4 H I FEATURES • SIMPLIFIED AMPLIFIER DESIGN F M J K N DT PIN 1

Contextual Info: TetraFET Illl iFFi mi SEME D2203UK LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V- 1 GHz PUSH-PULL h *- T FEATURES _ i *t ▼ A"'“# N • SIMPLIFIED AMPLIFIER DESIGN M • SUITABLE FOR BROAD BAND APPLICATIONS

D2203UK

Contextual Info: TetraFET D2203UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL B H C G 2 3 1 D A E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

eupec igbt

Abstract: kuka-2003-inhalt.qxd Eupec Power Semiconductors igbt eupec D1049N D2228N D428N D4457N D448N D5807N
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 10:34 Uhr Seite 45 Overview Rectifier in Disc Housings VRRM – Concept 9000 V D471N 6500 V D711N D1481N D749N D1800N D2601NH D2601N D3001N 5800 V 4800 V 1500 VRMS 4600 V D1809N Ceramic Disc D2201N 4500 V D1069N 4400 V Epoxy Disc

Contextual Info: nil Vrrr= TetraFET mi D2203UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V- 1 GHz PUSH-PULL “1 _ < F ► FEATURES rr i i • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS

D2202

Contextual Info: nil Vrr r = mi TetraFET D2202UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W - 12.5V- 1 GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DP PIN 1