D2271 Search Results

D2-470K

Abstract: D2-331K D2270 D4-270K D4182 D2-100K D2-120K D2-330K D2390 D4-121K
Contextual Info: HIGH CURRENT DRUM CORE INDUCTOR SERIES D 59 B ELECTRICAL CHARACTERISTICS - Inductance - Tolerance - Rated current - Testing procedures 1.0uH to 4700uH ± 20% for values under 10µH ± 10% for values above 10µH Obtained when Lo drops 10% typical Quadtech LCR 1750 Meter @ 1KHz

D2271

Abstract: transistor d2271 2SD2271
Contextual Info: D2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)

transistor d2271

Abstract: D2271 AN5296 Application note CA3018 CA3018A CA3018
Contextual Info: HARRIS bl E SEfllCOND S E C T O R D 43DE271 CA3018 ffl H A R R IS W □□Mb'ìflS 427 • H AS S E M I C O N D U C T O R General Purpose Transistor Arrays M arch 1993 Features Description • Matched Monolithic General Purpose Transistors T h e C A 3 0 1 8 a n d C A 3 0 1 8 A c o n s is t o f fo u r g e n e ra l p u rp o s e

Contextual Info: D2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)

D2271

Abstract: transistor d2271
Contextual Info: D2271 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor D2271 Motor Drive Applications High-Current Switching Applications Unit: mm • High DC current gain: hFE = 500 (min) (VCE = 2 V, IC = 5 A) • High breakdown voltage: VCEO (SUS) = 200 V (min)

Contextual Info: l - I A æ R R HA-5222/883 I S S E M I C O N D U C T O R Dual, Low Noise, Wideband, Precision Operational Amplifier January 1996 Description Features • This Circuit is Processed in A ccordance to MIL-STD883 and is Fully Conform ant Under th e Provisions of

Contextual Info: HCTS646M S S MAiSSS Radiation Hardened Octal Bus Transceiver/Register, Three-State August 1995 Features • • • • • • • • • • • • • • Pinouts 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD Si SEP Effective LET No Upsets: >100 MEV-cm2/mg

Contextual Info: ff! H A R R 82C237 IS S E M I C O N D U C T O R CMOS High Performance Programmable DMA Controller August 1996 Features Description • Fully Compatible with Harris 82C37A The 82C237 is a modified version of the 82C37A. The 82C237 is fully software and pin for pin compatible with the

Contextual Info: 3 H F A 1 1 4 5 / 8 8 3 High Speed, Low Power, Current Feedback Video Operational Amplifier with Output Disable june1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

D2470

Contextual Info: A HIGH CURRENT DRUM CORE INDUCTOR SERIES D B C ELECTRICAL CHARACTERISTICS - Inductance - Tolerance 1.0µH to 3100µH ±20% for values under 10µH DIMENSIONS IN INCHES ±10% for values above 10µH SIZE Dia A Max Length B ( Max ) - Current rating Based on value obtained when initial L value has fallen

Contextual Info: HARRIS SEMICOND SECTOR Œ bflE J> 4302271 Q G S G 2 S 4 T 31 H H A S HGTP14N40F3VL 14A, 400V N-Channel, Voltage Clamping IGBT December 1993 Features • • Package Logic Level Gate Drive JEDEC T0-220AB TOP VIEW • Internal Voltage Clamp COLLECTOR FLANGE

sm 4109

Abstract: HS305 3041 v H1300 077W
Contextual Info: H A R R I S S E M I C O N D S E CT OR IDE D I 4 3 0 5 2 7 1 0013447 3 I H I-3 0 5 /8 8 3 3 3 HARRIS T -5 1 -1 1 SPDT CMOS Analog Switch January 1989 Features Description • This Circuit Is Processed In Accordance to Mli-Std883 and Is Fully Conformant Under the Provisions of