D421 Search Results

Contextual Info: D4212-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

Contextual Info: D4217-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.25p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

D421

Abstract: TDK Pulse Transformers LXT914 TLA-3T106 TLA-3T107 TLA-3T111 6 pin pulse transformer 111
Contextual Info: D421_TLA3T 1/3 LAN Components TLA-3T106/107/111 10BASE-T Pulse Transformers TLA-3T106/107 FEATURES • 16-pin SOP package(1.27mm=50mil pin pitch). • AC.2000V withstanding voltage. • Using the high-quality and wide-band ferrite cores for LAN. • TLA-3T106/107 are suitable for use with LEVEL ONE’s LXT914,

Contextual Info: D4216-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.17p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

TDK Pulse Transformers 340

Contextual Info: D421_TLA3T 1/3 LAN Components TLA-3T106/107/111 10BASE-T Pulse Transformers TLA-3T106/107 FEATURES • 16-pin SOP package(1.27mm=50mil pin pitch). • Economical design(4 pulse transformers built-in). • AC.2000V withstanding voltage. • Using the high-quality and wide-band ferrite cores for LAN.

T800 transputer

Abstract: QIC-24
Contextual Info: Chapter 5 □ cmmos 43 IMS D7216 IMS D6216 IMS D5216 IMS D4216 ANSI FORTRAN 77 Toolset Advance Information ANSI FORTRAN 77 cross-development systems for IBM PC, NEC PC, Sun 3, Sun 4 and VAX hosts KEY FEATURES • Full ANSI FORTRAN 77 ANSI X3.9 -1978 •

inmos transputer reference manual

Abstract: VME 6340 ibm at motherboard 80286 IMSB404 D4217 D5214 IMS B404
Contextual Info: 35 C hapter 4 cCass constructors Donmos- IMS IMS IMS IMS D7217 D6217 D5217 D4217 C ~\— b □ Product Information C + + native and transputer cross-development systems for IBM PC, NEC PC, Sun 3, Sun 4 and VAX hosts KEY FEATURES • Conformance with the C + + 2.0 specification

Contextual Info: D4215-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.11p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

Contextual Info: STU/D421S Green Product SamHop Microelectronics Corp. Aug.20,2006 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID -40V -10A m Ω Max RDS(ON) 45 @ VGS = -10V 60 @ VGS = -4.5V Super high dense cell design for low RDS(ON).

D4210B

Contextual Info: D4210B SILICON VARACTOR DIODE PACKAGE STYLE DO-7 JEDEC SO-6(BRITISH STD) DESCRIPTION: The DC4210B is a Silicon Tuning Varactor Diode Designed for VHF/UHF Receiver Applications. MAXIMUM RATINGS I 100 mA V 60 V PDISS 400 mW @ TC = 25 OC TJ -65 OC to +150 OC

inmos m212 disk processor

Abstract: T222 inmos T414 D5214 IMSB404 inmos transputer reference manual ims-m212 Transputer T414 nec pc9801
Contextual Info: Chapter 3 □ I mos* 23 IMS D7214 IMS D6214 IMS D5214 IMS D4214 ANSI C Toolset Product Information ANSI C cross-development systems for IBM PC, NEC PC, Sun 3, Sun 4 and VAX hosts KEY FEATURES • Full ANSI C compiler X3.159-1989 • Validated against Plum Hall validation suite

Contextual Info: D4213-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.3.0p C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

Contextual Info: D4211-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.700f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

TIC 120

Contextual Info: S T U/D421S S amHop Microelectronics C orp. Aug.20,2006 P -C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -40V -10A R DS ON ( m W ) Max 45 @ V G S = -10V 60 @ V G S = -4.5V S uper high dense cell design for low R DS (ON ).

D4210-2

Contextual Info: D4210-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage15 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS

PIC18F25J11

Abstract: PIC18F26J11 pic 18f26j11 PIC18f example codes CTMU PIC18F46J11 PIC18F24J11 DS39932D PIC18F usart init example PIC18 example C18 RTCC PIC16 lin bus example codes C
Contextual Info: PIC18F46J11 Family Data Sheet 28/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2011 Microchip Technology Inc. DS39932D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

P42180

Abstract: S42180 X42180 N42180 W42180
Contextual Info: Z-Power LED X10490 Technical Data Sheet X42180 X42180 Features • Super high flux output Z-Power series is designed for 사진 and high luminance high current operation and • Designed for high current operation high flux output applications. • Low thermal resistance

ST2600C

Abstract: D419 D424
Contextual Info: Previous Datasheet Index Next Data Sheet Bulletin I25199/A ST2600C.R SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features 2630A Double side cooling High surge capability High mean current Fatigue free Typical Applications DC motor controls Controlled DC power supplies

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

S42182

Abstract: N42182 N42182H
Contextual Info: Z-Power LED X10490 Technical Data Sheet X42182 X42182 Features • Super high flux output Z-Power series is designed for and high luminance high current operation and • Designed for high high flux output applications. current operation • Low thermal resistance

X42182

Abstract: W42182
Contextual Info: Z-Power LED X10490 Technical Data Sheet X42182 X42182 Features • Super high flux output Z-Power series is designed for and high luminance high current operation and • Designed for high high flux output applications. current operation • Low thermal resistance

k d718

Abstract: transistor d472 D636 R transistor d669 D718 transistor d718 d718* transistor transistor d613 D674 D666
Contextual Info: Ordering number : ENN*6473 CMOS IC LC75878E, 75878W 1/8 to 1/10 Duty General-Purpose LCD Display Drivers Preliminary Overview Package Dimensions The LC75878E and LC75878W are 1/8 to 1/10 duty general-purpose LCD display drivers used for character and graphics display. These products operate under the

3we22

Abstract: 8001P
Contextual Info: blE ]> n e • bllE7SES 0033^02 Tflfl HNECE D421x 800/L, 42S1x800/L w NEC Electronics Inc. NEC ELECTRONICS INC Description The devices listed below are fa s t-p a g e dynam ic RAMs o rganized as 2M words by 8 bits a n d designed to o p e ra te from a single pow er supply. O ptional features

D4217400

Abstract: nec 4217400
Contextual Info: D4216400, 4217400 4,194,304 X 4-Bit Dynamic CMOS RAM M J jW NEC Electronics Inc. Description The ¿/D4216400 and the /D4217400 are fast-page dynamic RAMs organized as 4,194,304 words by 4 bits and designed to operate from a single +5-volt power supply. Advanced polycide technology minimizes sili­