D5043 Search Results

NJ32

Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Contextual Info: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE » • D50433B □□□SflhS B4b ■ ALGR 2061 THRU 2069 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2069B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper

TRANSISTOR ba 751

Abstract: TRANSISTOR 751
Contextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • D50433fl GDDSbST 3 ■ T - PRO CESS BNB 9 Process BNB NPN Darlington Transistor Process BNB is a double-diffused epitaxial planar NPN silicon Darlington pair. It is designed for use in high-gain, high-current amplifier circuits. Its comple­

1N914

Contextual Info: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN

2851 transistor npn

Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
Contextual Info: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to

transistor a13

Abstract: 2912 TRANSISTOR PNP A13 transistor 2912 npn D5043
Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • D50433Ö 00D3707 T ■ ALGR T -9 1 -0 1 PROCESS JMA Process JMA PNP Small-Signal Transistor Process JM A is a P N P double-diffused Silicon epi­ taxial planar transistor. Process JM A finds broad ap­ plication as a medium-power amplifier and switching

Hall Effect 3 pin ugn

Abstract: car pulse hall sensor UGN HALL Sprague Hall Effect sensor hall 4.5 24 pulse Ay hall sensor waveform of hall effect sensor UGS3056U
Contextual Info: AL LE GR O MICROSYSTEMS INC m 0SDM33S D ü G Mñ M T AL GR r-6 £ *-0 5 * AND 27612 U G S 3056 U: HALL EFFECT DIGITAL GEAR-TOOTH SENSORS WITHZERO-RPM CAPABILITY The Sprague Types UGN3056U and UGS3056U Hall effect digital gear-tooth sensors are bipolar integrated circuits that switch ON and

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

Contextual Info: 3-PHASE BRUSHLESS DC MOTOR CONTROLLER/DRIVER WITH BACK-EMF SENSING The A8905CLB isw a three-phase brushless dc motor controller/ driver for use with CD-ROM or DVD drives. The three half-bridge outputs are low on-resistance n-channel DMOS devices capable of

Contextual Info: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current

TI_BQ24721C_QFN_32P

Abstract: D5036 tps51620 PowerPAD20 AM4825P tps51125 R1019 FM ic GMT_G680LT1_SOT23_5P pt10s TPS51620RHAR
Contextual Info: INVENTEC PRELIMINARY TEST 07A99 2007 12 20 Pre-MP BUILD INVENTEC TITLE 07A99 Preliminary Test SIZE CODE A3 CHANGE by KOBE 23-Jan-2008 DOC. NUMBER REV X01 CS SHEET 1 OF 63 TABLE OF CONTENTS PAGE 1.COVER PAGE 2.INDEX 3.BLOCK DIAGRAM 4.POWER SEQUENCE BLOCK 5-12.SYSTEM POWER

Contextual Info: HALL-EFFECT GEAR-TOOTH SENSORS-ZERO SPEED The A3056EU/LU and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in response to differential magnetic fields created by ferrous targets. These devices are ideal for use in gear-tooth-based speed, position, and timing applications and

BEC npn

Abstract: SOT-23 EBC PT2221 N54 SOT-23
Contextual Info: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|

Contextual Info: A L LE GR O M I C R O S Y S T E M S INC T3 D • D S O l433ñ D G 0 3 7 7 3 1 ■ AL GR T-91-01 P R O C E S S PJ32 Process PJ32 P-Channel Junction Field-Effect Transistor Process PJ32 is a P-channel junction field-effect transistor designed a s a complement to P rocess

Contextual Info: D U A L F U L L - B R ID G E 23] E 2 E’ 22 ] SE N S E 2 S EN SE , E T o ut« E ¡3 V BB1 [~5~ o u t ,a £ 9 ] V BB2 19] GROUND GROUND [ S ' G RO UND [ l " GROUND VrefO u t E IZJ V ref 'N E The fixed off-time pulse duration is set by user-selected external

Contextual Info: LOW-DROPOUT REGULATORS — HIGH EFFICIENCY A8188SLU-XX O CQ D W 1 2 3 Û z CÛ ID CD CO LU LU < LU Dwg. P S -0 21-2 where “-xx" is the required output voltagefc|iWft8&, ABSOLUTE MAXIMUM RATINGS 10 V Input V oltage,^ . Peak Output'dttrrent EnabJ%lri'p|^ôltaget VE^

Contextual Info: LOW-DROPOUT ; 3 V REGULATOR — HIGH EFFICIENCY Designed specifically to meet the requirement for extended opera­ tion of battery-powered equipment such as cordless and cellular telephones, the A8184SLT voltage regulator offers the reduced dropout voltage and quiescent current essential for maximum battery life.

Contextual Info: 8-CHANNEL SATURATED SINK DRIVERS Developed for use with low-voltage LED and incandescent displays requiring low output saturation voltage, the UDN2595A and UDN2595LW meet many interface needs, including those exceeding the capabilities of standard logic buffers. The eight non-Darlington

Contextual Info: f Data Sheet 27627.125 ATS6; 2LSA ZERO-SPEED, SELF-CALIBRATING, N O N -O RIEN TEV, HALL-EFFECT GEA R -TO O TH SENSOR The ATS632LSA gear-tooth sensor is an optimized Hall-effect IC/ magnet combination that provides extremely accurate tabth edge detection when used with large-pitch targets. The ¿^Kttuubassembly

Contextual Info: LOW-DROPOUT, 3 V REGULATOR — HIGH EFFICIENCY Designed specifically to meet the requirement for extended opera­ tion of battery-powered equipment such as cordless and cellular telephones, the A8183SLU voltage regulator offers the reduced dropout voltage and quiescent current essential for maximum battery life.

in5626

Abstract: IN5627 IN5624 1N5625 SPD5628 C107V
Contextual Info: SOLID STATE DEVICES INC 15E D f l A3b b D ll 0001Ô05 2 | r-£>/-/r 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 F A X S I^I^g ô FEATURES

MA40S

Abstract: MA40S-3irn A3144 D 3141 transistor SENSITIVE HALL-EFFECT SWITCHES A3141 A3143 RFT hall UGN 3141 D5DM
Contextual Info: l i i i i SEN SITIVE HALL-EFFECT SW ITCH ES FOR H IG H - TEM PERATURE OPERATIO N These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +1506C, and are more stable with both

IN5624

Abstract: in5626 D5043 1N5625 1N5626 1N5625 PIV 1N5624 1N5627 SPD5628 1N5625 v
Contextual Info: SOLID STATE DEVICES INC 15E D | ö 3 bL Gll OOOlñDS 2 | 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View A venue La Mirada. California 90638 213 921-9660 T W X 910-583-4807 F A X 21'’ -921-2396 FEATURES

Contextual Info: SMOKE DETECTOR WITH INTERCONNECT AND TIMER guard 2 D ETEC T. IN GUARDi SENSITIVITY SET O S C . C AP. horn2 H 0R N 1 - SUPPLY The A5348CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking