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    D5043 Price and Stock

    onsemi ADD5043-169-2-GEVK

    AX5043 169MHZ DVK-2 ADD-ON BOARD
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    DigiKey ADD5043-169-2-GEVK Box 2 1
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    Mouser Electronics ADD5043-169-2-GEVK 38
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    Newark ADD5043-169-2-GEVK Bulk 1
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    TME ADD5043-169-2-GEVK 1
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    Avnet Silica ADD5043-169-2-GEVK 7 Weeks 1
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    onsemi ADD5043-868-2-GEVK

    AX5043 868MHZ DVK-2 ADD-ON BOARD
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    DigiKey ADD5043-868-2-GEVK Box 1 1
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    Newark ADD5043-868-2-GEVK Bulk 2
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    TME ADD5043-868-2-GEVK 1
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    Avnet Silica ADD5043-868-2-GEVK 7 Weeks 1
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    Chip1Stop ADD5043-868-2-GEVK 77
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    ABLIC Inc. S-1701D5043-U5T1G

    IC REG CONV BATTERY 1OUT SOT89-5
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    DigiKey S-1701D5043-U5T1G Reel 1,000
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    Avnet Americas S-1701D5043-U5T1G Reel 16 Weeks 1,000
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    Mouser Electronics S-1701D5043-U5T1G
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    ABLIC Inc. S-1701D5043-M5T1G

    IC REG CONV BATTERY 1OUT SOT23-5
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    DigiKey S-1701D5043-M5T1G Reel 3,000
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    Avnet Americas S-1701D5043-M5T1G Reel 16 Weeks 3,000
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    Mouser Electronics S-1701D5043-M5T1G
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    onsemi ADD5043-915-1-GEVK

    AX5043 915MHZ DVK-2 ADD-ON BOARD
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    Mouser Electronics ADD5043-915-1-GEVK 4
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    Newark ADD5043-915-1-GEVK Bulk 1
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    ADD5043-915-1-GEVK Bulk 1
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    D5043 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TI_BQ24721C_QFN_32P

    Abstract: D5036 tps51620 PowerPAD20 AM4825P tps51125 R1019 FM ic GMT_G680LT1_SOT23_5P pt10s TPS51620RHAR
    Text: INVENTEC PRELIMINARY TEST 07A99 2007 12 20 Pre-MP BUILD INVENTEC TITLE 07A99 Preliminary Test SIZE CODE A3 CHANGE by KOBE 23-Jan-2008 DOC. NUMBER REV X01 CS SHEET 1 OF 63 TABLE OF CONTENTS PAGE 1.COVER PAGE 2.INDEX 3.BLOCK DIAGRAM 4.POWER SEQUENCE BLOCK 5-12.SYSTEM POWER


    Original
    PDF 07A99 23-Jan-2008 R9033 R9034 AZ1015 C9038 C9040 R9039 TI_BQ24721C_QFN_32P D5036 tps51620 PowerPAD20 AM4825P tps51125 R1019 FM ic GMT_G680LT1_SOT23_5P pt10s TPS51620RHAR

    NJ32

    Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
    Text: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh


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    PDF D5D433fi DQQ3S61 THJ5459 THJ5484 THJ5485 THJ6449 THJ5450 THJ6451 NJ132L THJ6452 NJ32 THJ5486 THJ55456 THJ55466 THJ55476

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC LIE » • D50433B □□□SflhS B4b ■ ALGR 2061 THRU 2069 1.5 A DARLINGTON SWITCHES High-voltage, high-current Darlington arrays ULN2061M through ULN2069B are designed for interface between low-level logic and a variety of peripheral loads such as relays, solenoids, dc and stepper


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    PDF D50433B ULN2061M ULN2069B ULN2064/65B D50433Ã ULN2064LB ULN2068LB D504336 LN-2064/66B

    TRANSISTOR ba 751

    Abstract: TRANSISTOR 751
    Text: ALLEGRO MICROSYSTEMS INC ^3 D • D50433fl GDDSbST 3 ■ T - PRO CESS BNB 9 Process BNB NPN Darlington Transistor Process BNB is a double-diffused epitaxial planar NPN silicon Darlington pair. It is designed for use in high-gain, high-current amplifier circuits. Its comple­


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    PDF D50M33fl 1000mA 0S0433Ã 0003bb0 TRANSISTOR ba 751 TRANSISTOR 751

    1N914

    Abstract: No abstract text available
    Text: T3D J> • ALLEGRO MICROSYSTEMS INC D50433fl 00037^5 0 ■ ALGR PROCESS TTU Process TTU High-Speed Switching Diode A gold-doped silicon epitaxial diode used primarily in high-speed switching applications, Process TTU, with its P-type substrate, is the N P counterpart of PN


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    PDF 1N914 500mA Vn-20

    2851 transistor npn

    Abstract: A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907
    Text: ALLE6R0 MICROSYSTEMS INC T3 D • D50433fl G003b47 7 ■ ALGR PROCESS BDA 9 / “0/ Process BDA PNP Small-Signal Transistor A general-purpose PNP transistor, Process BDA is used as a low-noise, high-gain amplifier and as a medium-power switcher at frequencies from dc to


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    PDF 0S0433Ã CI003L -H053 2851 transistor npn A1409-1 Transistor A14 2N2907 A-04 a1-4095 PNP 2N2907

    transistor a13

    Abstract: 2912 TRANSISTOR PNP A13 transistor 2912 npn D5043
    Text: ALLEGRO MICROSYSTEMS INC 13 D • D50433Ö 00D3707 T ■ ALGR T -9 1 -0 1 PROCESS JMA Process JMA PNP Small-Signal Transistor Process JM A is a P N P double-diffused Silicon epi­ taxial planar transistor. Process JM A finds broad ap­ plication as a medium-power amplifier and switching


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    PDF D50433A T-91-01 DDD37GÃ transistor a13 2912 TRANSISTOR PNP A13 transistor 2912 npn D5043

    Hall Effect 3 pin ugn

    Abstract: car pulse hall sensor UGN HALL Sprague Hall Effect sensor hall 4.5 24 pulse Ay hall sensor waveform of hall effect sensor UGS3056U
    Text: AL LE GR O MICROSYSTEMS INC m 0SDM33S D ü G Mñ M T AL GR r-6 £ *-0 5 * AND 27612 U G S 3056 U: HALL EFFECT DIGITAL GEAR-TOOTH SENSORS WITHZERO-RPM CAPABILITY The Sprague Types UGN3056U and UGS3056U Hall effect digital gear-tooth sensors are bipolar integrated circuits that switch ON and


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    PDF 0SDM33S UGN3056U UGS3056U Hall Effect 3 pin ugn car pulse hall sensor UGN HALL Sprague Hall Effect sensor hall 4.5 24 pulse Ay hall sensor waveform of hall effect sensor

    tpq2907

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays


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    PDF 05G433Ã 14-pin TPQ7051 TPQ6700 TPQ6600A TPQ6600 TPQ6502 2N3904 2N3906 tpq2907

    Untitled

    Abstract: No abstract text available
    Text: 3-PHASE BRUSHLESS DC MOTOR CONTROLLER/DRIVER WITH BACK-EMF SENSING The A8905CLB isw a three-phase brushless dc motor controller/ driver for use with CD-ROM or DVD drives. The three half-bridge outputs are low on-resistance n-channel DMOS devices capable of


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    PDF A8905CLB 50433A 1043j_ MA-Q08-25A

    Untitled

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC TB ] • 0504330 0003bS5 b ■ ALGR r - 9 )• O i PROCESS BLA Process BLA NPN High-Voltage Transistor The NPN process BLA transistor is a double­ diffused silicon epitaxial planar device used primarily in video circuits and similar high-voltage, low-current


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    PDF 0003bS5 D50433Ã GG03b5b

    Untitled

    Abstract: No abstract text available
    Text: HALL-EFFECT GEAR-TOOTH SENSORS-ZERO SPEED The A3056EU/LU and A3058EU/LU Hall effect gear-tooth sensors are monolithic integrated circuits that switch in response to differential magnetic fields created by ferrous targets. These devices are ideal for use in gear-tooth-based speed, position, and timing applications and


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    PDF A3056EU/LU A3058EU/LU A3056Eupply D50433Ã

    BEC npn

    Abstract: SOT-23 EBC PT2221 N54 SOT-23
    Text: ALLEGRO MICROSYSTEMS INC blE D • D5G433Ô 000^365 T17 M A L 6 R NPN TRANSISTORS S O T -2 3 /T O -2 3 6 A B 3 2 S /M / ELECTRICAL CHARACTERISTICS at TA = 25°C M a rkin g Type 8 D e v ic e 3 i < ^CBO V BR CFO V (V) (BR)EBO M ax . @ VCB (V) <nA) (V) vCE(sat|


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    PDF D5G433Ô BEC npn SOT-23 EBC PT2221 N54 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: A L LE GR O M I C R O S Y S T E M S INC T3 D • D S O l433ñ D G 0 3 7 7 3 1 ■ AL GR T-91-01 P R O C E S S PJ32 Process PJ32 P-Channel Junction Field-Effect Transistor Process PJ32 is a P-channel junction field-effect transistor designed a s a complement to P rocess


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    PDF T-91-01 100Hz D50433A 0DQ3774

    Untitled

    Abstract: No abstract text available
    Text: D U A L F U L L - B R ID G E 23] E 2 E’ 22 ] SE N S E 2 S EN SE , E T o ut« E ¡3 V BB1 [~5~ o u t ,a £ 9 ] V BB2 19] GROUND GROUND [ S ' G RO UND [ l " GROUND VrefO u t E IZJ V ref 'N E The fixed off-time pulse duration is set by user-selected external


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    PDF A3961Slly

    Untitled

    Abstract: No abstract text available
    Text: LOW-DROPOUT REGULATORS — HIGH EFFICIENCY A8188SLU-XX O CQ D W 1 2 3 Û z CÛ ID CD CO LU LU < LU Dwg. P S -0 21-2 where “-xx" is the required output voltagefc|iWft8&, ABSOLUTE MAXIMUM RATINGS 10 V Input V oltage,^ . Peak Output'dttrrent EnabJ%lri'p|^ôltaget VE^


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    PDF A8188SLU-XX juncti18 D50433Ã

    Untitled

    Abstract: No abstract text available
    Text: LOW-DROPOUT ; 3 V REGULATOR — HIGH EFFICIENCY Designed specifically to meet the requirement for extended opera­ tion of battery-powered equipment such as cordless and cellular telephones, the A8184SLT voltage regulator offers the reduced dropout voltage and quiescent current essential for maximum battery life.


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    PDF A8184SLT GP-051-2 GP-058 GP-054-1

    Untitled

    Abstract: No abstract text available
    Text: 8-CHANNEL SATURATED SINK DRIVERS Developed for use with low-voltage LED and incandescent displays requiring low output saturation voltage, the UDN2595A and UDN2595LW meet many interface needs, including those exceeding the capabilities of standard logic buffers. The eight non-Darlington


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    PDF UDN2595A UDN2595LW UDN2595LW UDN2595A GP-018B

    Untitled

    Abstract: No abstract text available
    Text: f Data Sheet 27627.125 ATS6; 2LSA ZERO-SPEED, SELF-CALIBRATING, N O N -O RIEN TEV, HALL-EFFECT GEA R -TO O TH SENSOR The ATS632LSA gear-tooth sensor is an optimized Hall-effect IC/ magnet combination that provides extremely accurate tabth edge detection when used with large-pitch targets. The ¿^Kttuubassembly


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    PDF ATS632LSA Mhf017 0S0433A 8737b

    Untitled

    Abstract: No abstract text available
    Text: LOW-DROPOUT, 3 V REGULATOR — HIGH EFFICIENCY Designed specifically to meet the requirement for extended opera­ tion of battery-powered equipment such as cordless and cellular telephones, the A8183SLU voltage regulator offers the reduced dropout voltage and quiescent current essential for maximum battery life.


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    PDF A8183SLU D50433A

    in5626

    Abstract: IN5627 IN5624 1N5625 SPD5628 C107V
    Text: SOLID STATE DEVICES INC 15E D f l A3b b D ll 0001Ô05 2 | r-£>/-/r 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View Avenue La Mirada. California 90638 213 921-9660 TWX 910-583-4807 F A X S I^I^g ô FEATURES


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    PDF 1N5624 SPD5628 1N5625 1N5626 IN5627 SPD5628 IN5624 IN5626 C107V

    MA40S

    Abstract: MA40S-3irn A3144 D 3141 transistor SENSITIVE HALL-EFFECT SWITCHES A3141 A3143 RFT hall UGN 3141 D5DM
    Text: l i i i i SEN SITIVE HALL-EFFECT SW ITCH ES FOR H IG H - TEM PERATURE OPERATIO N These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +1506C, and are more stable with both


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    PDF PH-003A DS0433Ã MA40S MA40S-3irn A3144 D 3141 transistor SENSITIVE HALL-EFFECT SWITCHES A3141 A3143 RFT hall UGN 3141 D5DM

    IN5624

    Abstract: in5626 D5043 1N5625 1N5626 1N5625 PIV 1N5624 1N5627 SPD5628 1N5625 v
    Text: SOLID STATE DEVICES INC 15E D | ö 3 bL Gll OOOlñDS 2 | 1N5624 THRU SPD5628 3 AMP STANDARD RECOVERY RECTIFIER 200-1000 VOLTS CASE STYLE 14830 Valley View A venue La Mirada. California 90638 213 921-9660 T W X 910-583-4807 F A X 21'’ -921-2396 FEATURES


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    PDF 1N5624 SPD5628 1N5625 1N5626 1N5627 SPD5628 IN5624 in5626 D5043 1N5625 1N5626 1N5625 PIV 1N5627 1N5625 v

    Untitled

    Abstract: No abstract text available
    Text: SMOKE DETECTOR WITH INTERCONNECT AND TIMER guard 2 D ETEC T. IN GUARDi SENSITIVITY SET O S C . C AP. horn2 H 0R N 1 - SUPPLY The A5348CA is a low-current, CMOS circuit providing all of the required features for an ionization-type smoke detector. A networking


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    PDF A5348CA UL217. S0H33Ã