DALLAS 1220Y Search Results

2816 eeprom

Abstract: CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
Contextual Info: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K N onvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 < • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

CI EEPROM 2816

Abstract: CI EPROM 2816 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas am/2816 eprom
Contextual Info: D S 1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or EEPROM A7 1 1 24 1 V cc A6

2816 eeprom

Abstract: eeprom 2816 CI EEPROM 2816 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150
Contextual Info: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 2K x 8 volatile static RAM or

dallas 1220y

Abstract: 1220Y
Contextual Info: D S 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

Contextual Info: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss A7 24 1 Vcc A6 | 2 23 1 A8 22 1 A9 A4 | 4

dallas ds80c320 high speed micro guide

Abstract: transistor bf 175 DS1640
Contextual Info: TABLE OF CONTENTS Short-Form Catalog T im e kee pin g . 1 M emory P ro d u