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    DARLINGTON HALF BRIDGE Search Results

    DARLINGTON HALF BRIDGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK126BG
    		Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, WCSP4G Visit Toshiba Electronic Devices & Storage Corporation
    TCK401G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E Visit Toshiba Electronic Devices & Storage Corporation
    TCK127BG
    		Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1 to 5.5 V, 1 A, Auto-discharge, WCSP4G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G
    		Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON HALF BRIDGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: ITC135P Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000 Units V mA  V mA - The ITC135’s optocoupler provides for half-wave


    Original     		ITC135P ITC135â 16-pin 3750Vrms DS-ITC135P-R04 PDF

    Full-Wave Bridge Rectifier

    Abstract: 10PA ITC135 ITC135P ITC135PTR J-STD-033
    Contextual Info: ITC135P Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000 Units V mA  V mA - The ITC135’s optocoupler provides for half-wave


    Original     		ITC135P ITC135 16-pin 3750Vrms DS-ITC135P-R04 Full-Wave Bridge Rectifier 10PA ITC135P ITC135PTR J-STD-033 PDF

    pwm INVERTER welder

    Abstract: KD224510 250A darlington transistor Kd224515 powerex snubber capacitor inverter welder circuit kd2245 kd224510 application note KD221K75 transistor
    Contextual Info: W U IfB tE K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Application Information 2.7 Reverse Transistor Action and dv/dt Turn-on A problem that occurs with the half-bridge circuit configuration fed


    OCR Scan     		PDF

    HALF BRIDGE NPN DARLINGTON POWER MODULE

    Abstract: 0809 al
    Contextual Info: 30E D • TW SB? Q03Q7Q0 =1 ■ : ' X ‘3 3 - 3 5 ' r r z SGS-THOMSON ^7# SGS25DB080D - ^ fi s-THoiisoir^ HALF BRIDGE NPN DARLINGTON = POWER MODULE _ ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE


    OCR Scan     		Q03Q7Q0 SGS25DB080D O-240) PC-029« HALF BRIDGE NPN DARLINGTON POWER MODULE 0809 al PDF

    Contextual Info: PTC2052 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)750 V(BR)CBO (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC) h(FE) Min. Current gain.25 @I(C) (A) (Test Condition)


    Original     		PTC2052 NumberTR00500005 PDF

    Contextual Info: PTC2051 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)850 V(BR)CBO (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC) h(FE) Min. Current gain.25 @I(C) (A) (Test Condition)


    Original     		PTC2051 NumberTR00500005 PDF

    Contextual Info: LD061S Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)900 V(BR)CBO (V)900 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain. @I(C) (A) (Test Condition)5.0


    Original     		LD061S PDF

    HALF BRIDGE NPN DARLINGTON POWER MODULE

    Abstract: SGS35DB070 transistor j237 diode sg 5 ts
    Contextual Info: 30E_*_ • ï'iaisav 0030712 s ■ "ì • Vfr SGS-THOMSON s_6 - ôD gfôm i@ ¥fô *l S G S3 5 D B 070D s-THOMSON HALF BRIDGE NPN DARLINGTON POWER MODULE . POWER MODULE WITH INTERNAL ISOLA­ TION (2500V RMS ■ LOW Rth JUNCTION TO CASE . FREEWHEELING DIODE


    OCR Scan     		O-240) PC-029« HALF BRIDGE NPN DARLINGTON POWER MODULE SGS35DB070 transistor j237 diode sg 5 ts PDF

    Contextual Info: LD061RS Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)900 V(BR)CBO (V)900 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain. @I(C) (A) (Test Condition)5.0


    Original     		LD061RS PDF

    Contextual Info: KD621K50HB Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)950ö V(BR)CBO (V) I(C) Max. (A)500 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.750 @I(C) (A) (Test Condition)500


    Original     		KD621K50HB PDF

    Contextual Info: LD061R Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)900 V(BR)CBO (V)900 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain. @I(C) (A) (Test Condition)5.0


    Original     		LD061R PDF

    cc100r600

    Contextual Info: CC100R600K Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)550 V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150 h(FE) Min. Current gain.40 @I(C) (A) (Test Condition)100


    Original     		CC100R600K cc100r600 PDF

    Contextual Info: 2DI150D100 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)1.0k V(BR)CBO (V)1.0k I(C) Max. (A)150 Absolute Max. Power Diss. (W)1.0k Maximum Operating Temp (øC) h(FE) Min. Current gain.100 @I(C) (A) (Test Condition)150


    Original     		2DI150D100 Code11-1 NumberTR01100001 PDF

    Contextual Info: QCA100A40 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)300ö V(BR)CBO (V)400 I(C) Max. (A)100 Absolute Max. Power Diss. (W)620 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)100


    Original     		QCA100A40 NumberTR00900005 PDF

    Contextual Info: LD111 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)450 V(BR)CBO (V)450 I(C) Max. (A)40 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.50 @I(C) (A) (Test Condition)10


    Original     		LD111 PDF

    Contextual Info: LD061 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)900 V(BR)CBO (V)900 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.50 @I(C) (A) (Test Condition)5.0


    Original     		LD061 PDF

    Contextual Info: KC324515 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)450ö V(BR)CBO (V)600 I(C) Max. (A)150 Absolute Max. Power Diss. (W)690 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)150


    Original     		KC324515 NumberTR00900003 PDF

    Contextual Info: LD051 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)800 V(BR)CBO (V)800 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.50 @I(C) (A) (Test Condition)5.0


    Original     		LD051 PDF

    Contextual Info: BD081 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.1.0k @I(C) (A) (Test Condition)20


    Original     		BD081 PDF

    Contextual Info: SK50DM060D Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)50 Absolute Max. Power Diss. (W)310 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)50


    Original     		SK50DM060D NumberTR00700007 PDF

    Contextual Info: LD051S Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)800 V(BR)CBO (V)800 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.50 @I(C) (A) (Test Condition)5.0


    Original     		LD051S PDF

    SK50DB060

    Contextual Info: SK50DB060D Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)600 V(BR)CBO (V)600 I(C) Max. (A)50 Absolute Max. Power Diss. (W)310 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)50


    Original     		SK50DB060D NumberTR00700006 SK50DB060 PDF

    Contextual Info: LD051R Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)800 V(BR)CBO (V)800 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.50 @I(C) (A) (Test Condition)5.0


    Original     		LD051R PDF

    Contextual Info: SK50DB120D Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)1.2k V(BR)CBO (V)1.2k I(C) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC)150õ h(FE) Min. Current gain.75 @I(C) (A) (Test Condition)50


    Original     		SK50DB120D NumberTR00700006 PDF