DARLINGTON NPN 2 AMP Search Results

Contextual Info: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR . MONOLITHIC DARLINGTON CONFIGURATION . INTEGRATED ANTI PARALLEL COLLECTOR-EMITTER DIODE APPLICATION . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE AMPLIFIERS 2 DESCRIPTION The BDX87C is a silicon Epitaxial-Base NPN

BDX87C

Contextual Info: BDX87C SILICON NPN POWER DARLINGTON TRANSISTOR • ■ MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATION GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE AMPLIFIERS ■ 1 2 DESCRIPTION The BDX87C is a silicon epitaxial-base NPN

TRANSISTOR T4

Abstract: NSG2557
Contextual Info: NSG2557 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors

BUT35

Abstract: transistors but35 CM4050
Contextual Info: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS

New England Semiconductor

Abstract: NES6284
Contextual Info: NES6284 ^ M W ^NEW ENGLAND SEMICONDUCTOR 2 0 AMPERE NPN SILICON DARLINGTON POWER TRANSISTOR • • • • • NPN DARLINGTON POWER TRANSISTOR General Purpose Amplifier Low Frequency Switching High DC Current Gain Monolithic Construction Built in Base Emitter Shunt Resistors

BDX67C

Abstract: bdx67b BDX66C
Contextual Info: BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching

BDX67C

Abstract: BDX66C Transistor BDX67C BDX67B BDX67A BDX67 BDX66B BDX66A BDX66 BDX67 transistor bdx66 TRANSISTOR BDX BDX66C transistor BDX 80 diagram DARLINGTON BDX67B
Contextual Info: BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 26.6 max. 9.0 max. 20.3 max. E 1 .0 B 2. 5 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

200W TRANSISTOR AUDIO AMPLIFIER

Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier
Contextual Info: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

"Darlington Transistors"

Abstract: BDX 20a 200w AUDIO AMPLIFIER TRANSISTOR BDX Darlington 30A Darlington 40A darlington transistor for audio power application npn DARLINGTON 10A NPN Transistor VCEO 80V 100V transistor BDX 65
Contextual Info: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

32N45

Abstract: BDV65F Darlington NPN Silicon Diode 7277B BDV64F BDV65AF BDV65BF BDV65CF NPN POWER DARLINGTON TRANSISTORS SOT-199
Contextual Info: PHILIPS INTERNATIONAL Philips Com ponents T> m 711QÔEL 00433bû Product specification NPN Silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 NPN epitaxial base transistors in a monolithic Darlington circuit for

BDV65AF

Abstract: BDV65CF BDV64F BDV65BF BDV65F current amplifier note darlington BDV66F BC 560 philips NPN POWER DARLINGTON TRANSISTORS
Contextual Info: BDV65F/65AF/65BF/65CF D atasheet status Product specif ication date of issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN 1 2 3 NPN epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general

Contextual Info: BDX69A BDX69A BDX69B BDX69C S EM E LA B NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.

2N6096

Abstract: 2N6055 2N6055 MOTOROLA N6056 2N6056
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6055 2 N6056* Darlington Com plem entary Silicon Power Transistors "Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. • • • • DARLINGTON 8 AMPERE

2N6578

Abstract: 2N6576
Contextual Info: MOTOROLA Order this document by 2N6576/D SEMICONDUCTOR TECHNICAL DATA 2 N 6 5 76 2 N 6577 2 N 65 78 NPN Silicon Power Darlington Transistors G eneral-purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • •

Contextual Info: Optointerrupter Specifications H21B1, H21B2, H21B3 Optointerrupter GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier Module with 1mm Aperture T h e H 2 1B Interrupter Module is a gallium arsenide infrared em itting diode coupled to a silicon Darlington-connected

2929 transistor

Abstract: MPSA25 mpsa82 MPSA26 MPSA45 MPSA55 MPSA62 MPSA63 I0204 625MW
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA26 14E O 00073SM I NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vc*s=50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Ch aracte ristic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC8P01 Silicon NPN epitaxial planar type darlington For low frequency output amplification Darlington connection DSC2P01 in MT-2 through hole type package • Package  High forward current transfer ratio hFE with excellent linearity

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC8Q01 Silicon NPN epitaxial planar type darlington For low frequency output amplification Darlington connection DSC7Q01 in MT-2 through hole type package • Package  High forward current transfer ratio hFE with excellent linearity

e5cb

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DSC8P01 Silicon NPN epitaxial planar type darlington For low frequency output amplification Darlington connection DSC2P01 in MT-2 through hole type package • Features  Package  High forward current transfer ratio hFE with excellent linearity

Contextual Info: 4DE ]> ROHM CO LTD h7 > v 7 8 2 0 = ]= ^ a O O S T IH Q [ RH 1 2SD1637 $ / I ran sisto rs -7=33-29 2 S D 1 6 3 7 NPN y ' j h > Y-7SV7^$ Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor

D40K2

Abstract: d40k1 D40K D40K3 D41K
Contextual Info: VERY HIGH GAIN D40K Series NPN POWER DARLINGTON TRANSISTORS 30-50 VOLTS 2 AMP, 10 WATTS COMPLEMENTARY TO THE D41K SERIES Applications: • • • • • • • • • NPN COLLECTOR Driver Regulator Touch Switch I.C. Driver Capacitor Multiplier Audio Output

2sd2399

Contextual Info: 2SD2399 Transistor, NPN, Darlington Features Dimensions Units : mm • available In TO-220FN package • Darlington connection provides high dc current gain (hFE) • damper diode is incorporated • built-in resistors between base and emitter • 2 mm lower than the T0-220FP

silicon power 2GB

Abstract: DG432
Contextual Info: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting