DG432 Search Results

silicon power 2GB

Abstract: DG432
Contextual Info: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting

Contextual Info: U s e r 's M a n u a l < £ 2 iL G E Chapter 5 Z8 INSTRUCTION SET 5.1 Z8 FUNCTIONAL SUMMARY Z8 instructions can be divided functionally into the follow­ ing eight groups: • ■ ■ ■ Load Arithm etic Logical Program Control ■ ■ ■ ■ Bit Manipulation

dg432

Contextual Info: BDT60;60A BDT60B;60C SbE T> PHILIPS INTERNATIONAL • 711002b 00432G4 bTl HIPHIN T- 33- ? SILICON DARLINGTON POWER TRANSISTORS P-N-P silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier applications.

Contextual Info: n b427S25 00432E3 T71 B N E C E . |\|EC NEC Elpntronirs |nr juPD78244 Family fiPD78243/244 8-Bit, K-Series Microcontrollers With A/D Converter, EEPROM, Real-Time Output Ports September 1993 Description Features The /JPD78243 and juPD78244 are members of the

Contextual Info: TOSHIBA TMP91C642A CMOS 8-BIT MICROCONTROLLERS TMP91C642AN /TMP91C642AF 1. OUTLINE AND CHARACTERISTICS The TM P91C642A is an advanced-function and hig h ly in te g ra te d 8-bit microcontroller which is developed for use with software servos. In addition to I/O ports and other basic components, the TMP91C642A has high-speed

BDT63

Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
Contextual Info: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general

Contextual Info: ANALOG DEVICES FEATURES 44 V Supply Maximum Ratings ±15 V Analog Signal Range Low On Resistance <24 i l Ultralow Power Dissipation (3.9 (jiW) Low Leakage (<0.25 nA) Fast Switching Times t 0N <165 ns toFF 30 ns Break-Before-Make Switching Action TTL/CMOS Compatible