DATA SHEET FOR BIPOLAR JUNCTION DIOD Search Results
DATA SHEET FOR BIPOLAR JUNCTION DIOD Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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NFMJMPC226R0G3D | Murata Manufacturing Co Ltd | Data Line Filter, |
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NFM15PC755R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, |
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NFM15PC435R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, |
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NFM15PC915R0G3D | Murata Manufacturing Co Ltd | Feed Through Capacitor, |
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GRT155C81A475ME13J | Murata Manufacturing Co Ltd | AEC-Q200 Compliant Chip Multilayer Ceramic Capacitors for Infotainment |
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DATA SHEET FOR BIPOLAR JUNCTION DIOD Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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but34
Abstract: Motorola Bipolar Power Transistor Data darling
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BUT34 BUT34 Motorola Bipolar Power Transistor Data darling | |
tektronix 475
Abstract: motorola bipolar transistor
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BUT33 BUT33 tektronix 475 motorola bipolar transistor | |
C 3311 transistor
Abstract: DIODE MOTOROLA 39A
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BUL44D2 BUL44D2 C 3311 transistor DIODE MOTOROLA 39A | |
OL35Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS S AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m ltter Diode and B uilt-in E fficient A ntisaturation N etw ork |
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MJE18004D2 MJE18004D2 OL35 | |
TRANSISTOR SMD MARKING CODE for t13
Abstract: smd 103 stepper motor driver IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 Q67006-A9297
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P-DSO-24-3 Q67006-A9297 GPS05144 TRANSISTOR SMD MARKING CODE for t13 smd 103 stepper motor driver IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 Q67006-A9297 | |
V2-300VContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Ita n s is to r w ith Integrated C ollector-Em itter Diode and Built-in Efficient Antisaturation Netw ork POWER TRANSISTORS 5 AMPERES 700 VOLTS |
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BUL45D2 BUL45D2 V2-300V | |
MJ10009Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M J 10009* D esigner’s Data Sheet SW ITCHMODE Series NPN Silico n Power Darlington TVansistor with B ase-Em itter Speedup Diode 20 AM PERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor Is designed for high-voltage, high-speed, |
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MJ10009 MJ10009) | |
transistor mj10005
Abstract: 440 motorola
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J10005* MJ10005 MJ10005. MJ100 transistor mj10005 440 motorola | |
infineon 3727
Abstract: marking code tca IEB00697 IEB00899 IED01655 IED01656 IEP00696 IEP00898 P-DIP-20-6 Q67000-A8302
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marking code D23
Abstract: IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 TLE4726G
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TLE4726G PG-DSO-24-13 TLE4726G marking code D23 IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 | |
ks621k30
Abstract: RFT Semiconductors Diode and Transistor 1980
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Contextual Info: MOTOROLA Order th is docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw ork |
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BUL44D2/D BUL44D2 BUL44D2 | |
MJ10007Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS |
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MJ10007' MJ10007 | |
bipolar junction transistor
Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
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OT-223 DZT851, DZT853, DZT951, DZT953 OT-223 DZT851 DZT951 DZT853 bipolar junction transistor FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a | |
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BUT34
Abstract: 2N3763 MOTOROLA BUT34 equivalent MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 MM3735
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BUT34/D* BUT34/D BUT34 2N3763 MOTOROLA BUT34 equivalent MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 MM3735 | |
Contextual Info: M O TOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 40 AMPERE NPN SILICON POW ER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS Th e M J10022 and M J10023 Darlington translators are designed for high-voltage, |
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MJ10022 MJ10023 J10022 J10023 | |
MR854 diode
Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854
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BUT33/D* BUT33/D MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854 | |
c 547 c transistorContextual Info: MOTOROLA Order this docum ent by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Pow er Ttansistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk |
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MJE18004D2/D MJE18004D2 MJE18004D2 1-80C 2PHX34556C-0 c 547 c transistor | |
BUL45D2
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
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BUL45D2/D BUL45D2 BUL45D2 BUL45D2/D* MJE210 MPF930 MTP12N10 MTP8P10 MUR105 | |
Motorola AN222A
Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
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MJ10023/D MJ10023 Motorola AN222A application MJ10023 U430B motorola 222A motorola SPS bipolar | |
1N4937
Abstract: MJ10020 MJ10021 AN222A
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204AE 1N4937 MJ10020 MJ10021 AN222A | |
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE |
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MGP11N60ED | |
1N4937
Abstract: MJ10020 MJ10021
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MJ10020/D* MJ10020/D 1N4937 MJ10020 MJ10021 | |
application MJ10023
Abstract: MJ10022 MJ10023 NPN 300 VOLTS vce POWER TRANSISTOR npn darlington transistor 150 watts 1N4937 AN222A
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MJ10022/D* MJ10022/D application MJ10023 MJ10022 MJ10023 NPN 300 VOLTS vce POWER TRANSISTOR npn darlington transistor 150 watts 1N4937 AN222A |