DATA SHEET FOR BIPOLAR JUNCTION DIOD Search Results
DATA SHEET FOR BIPOLAR JUNCTION DIOD Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| MP-52RJ11SNNE-010 | Amphenol Cables on Demand | Amphenol MP-52RJ11SNNE-010 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 10ft | |||
| MP-52RJ11UNNE-015 | Amphenol Cables on Demand | Amphenol MP-52RJ11UNNE-015 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft | |||
| MP-52RJ11SNNE-007 | Amphenol Cables on Demand | Amphenol MP-52RJ11SNNE-007 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 7ft | |||
| MP-52RJ11UNNE-010 | Amphenol Cables on Demand | Amphenol MP-52RJ11UNNE-010 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 10ft | |||
| MP-52RJ11SNNE-015 | Amphenol Cables on Demand | Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft |
DATA SHEET FOR BIPOLAR JUNCTION DIOD Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
but34
Abstract: Motorola Bipolar Power Transistor Data darling
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but34motorola bipolar power transistor datadarling | |
tektronix 475
Abstract: motorola bipolar transistor
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but33tektronix 475motorola bipolar transistor | |
C 3311 transistor
Abstract: DIODE MOTOROLA 39A
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bul44d2c 3311 transistordiode motorola 39a | |
OL35Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS S AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m ltter Diode and B uilt-in E fficient A ntisaturation N etw ork |
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mje18004d2ol35 | |
TRANSISTOR SMD MARKING CODE for t13
Abstract: smd 103 stepper motor driver IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 Q67006-A9297
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p-dso-24-3q67006-a9297gps05144transistor smd marking code for t13+8 | |
V2-300VContextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Ita n s is to r w ith Integrated C ollector-Em itter Diode and Built-in Efficient Antisaturation Netw ork POWER TRANSISTORS 5 AMPERES 700 VOLTS |
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bul45d2v2-300v | |
MJ10009Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M J 10009* D esigner’s Data Sheet SW ITCHMODE Series NPN Silico n Power Darlington TVansistor with B ase-Em itter Speedup Diode 20 AM PERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor Is designed for high-voltage, high-speed, |
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mj10009 | |
transistor mj10005
Abstract: 440 motorola
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j10005mj10005mj100transistor mj10005+1 | |
infineon 3727
Abstract: marking code tca IEB00697 IEB00899 IED01655 IED01656 IEP00696 IEP00898 P-DIP-20-6 Q67000-A8302
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infineon 3727marking code tcaieb00697ieb00899+6 | |
marking code D23
Abstract: IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 TLE4726G
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tle4726gpg-dso-24-13marking code d23ieb00899+6 | |
ks621k30
Abstract: RFT Semiconductors Diode and Transistor 1980
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ks621k30rft semiconductorsdiode and transistor 1980 | |
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Contextual Info: MOTOROLA Order th is docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw ork |
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bul44d2/dbul44d2 | |
MJ10007Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10007’ Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode •Motorola Pr«f*rr«d Otvlet 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS |
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mj10007 | |
bipolar junction transistor
Abstract: FZT953 DZT3150 DZT853 DZT953 Bipolar Junction Transistor npn DZT851 DZT951 NPN medium power transistor in a SOT package 100V transistor npn 5a
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ot-223dzt851dzt853dzt951+7 | |
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BUT34
Abstract: 2N3763 MOTOROLA BUT34 equivalent MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 MM3735
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but34/dbut342n3763 motorolabut34 equivalent+7 | |
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Contextual Info: M O TOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 40 AMPERE NPN SILICON POW ER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS Th e M J10022 and M J10023 Darlington translators are designed for high-voltage, |
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mj10022mj10023j10022j10023 | |
MR854 diode
Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854
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but33/dmr854 diode1n49341n4937+6 | |
c 547 c transistorContextual Info: MOTOROLA Order this docum ent by MJE18004D2/D SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Pow er Ttansistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk |
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mje18004d2/dmje18004d21-80c2phx34556c-0+1 | |
BUL45D2
Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
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bul45d2/dbul45d2mje210mpf930+3 | |
Motorola AN222A
Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
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mj10023/dmj10023motorola an222aapplication mj10023+3 | |
1N4937
Abstract: MJ10020 MJ10021 AN222A
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204ae1n4937mj10020mj10021+1 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP11N60ED Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 11 A @ 90°C 15 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE |
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mgp11n60ed | |
1N4937
Abstract: MJ10020 MJ10021
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mj10020/d1n4937mj10020mj10021 | |
application MJ10023
Abstract: MJ10022 MJ10023 NPN 300 VOLTS vce POWER TRANSISTOR npn darlington transistor 150 watts 1N4937 AN222A
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mj10022/dapplication mj10023mj10022mj10023+4 | |