DATA SHEET FOR BIPOLAR JUNCTION DIOD Search Results

but34

Abstract: Motorola Bipolar Power Transistor Data darling
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Designer's Data Sheet 50 AMPERES NPN SILICON POWER DARLINQTON TRANSISTOR 850 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT34 Darlington transistor Is designed for high-voltage, high-speed, power

C 3311 transistor

Abstract: DIODE MOTOROLA 39A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL44D2 Designer's Data Sheet POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power TVansistor with Integrated Col lector-E m itter Diode and Built-in Efficient Antisaturation N etw ork

TRANSISTOR SMD MARKING CODE for t13

Abstract: smd 103 stepper motor driver IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 Q67006-A9297
Contextual Info: 2-Phase Stepper-Motor Driver TLE 4726 Bipolar IC Overview Features • 2 x 0.75 A / 50 V outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Low standby-current drain • Full, half, quarter, mini step

V2-300V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUL45D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Ita n s is to r w ith Integrated C ollector-Em itter Diode and Built-in Efficient Antisaturation Netw ork POWER TRANSISTORS 5 AMPERES 700 VOLTS

MJ10009

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA M J 10009* D esigner’s Data Sheet SW ITCHMODE Series NPN Silico n Power Darlington TVansistor with B ase-Em itter Speedup Diode 20 AM PERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor Is designed for high-voltage, high-speed,

transistor mj10005

Abstract: 440 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10005* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor w ith B ase-E m itter Speedup Diode "Motorola Pr*f*rr*d D«vic« 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS

infineon 3727

Abstract: marking code tca IEB00697 IEB00899 IED01655 IED01656 IEP00696 IEP00898 P-DIP-20-6 Q67000-A8302
Contextual Info: TCA 3727 2-Phase Stepper-Motor Driver Bipolar IC Features • • • • • • • • • 2 x 0.75 amp. / 50 V outputs Integrated driver, control logic and current control chopper Fast free-wheeling diodes Max. supply voltage 52 V Outputs free of crossover current

marking code D23

Abstract: IEB00899 IED01167 IED01655 IED01656 IED01657 IED01660 IEP00898 TLE4726G
Contextual Info: 2-Phase Stepper-Motor Driver TLE4726G Bipolar IC Overview Features • 2x 0.75 A / 50 V outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Low standby-current drain • Full, half, quarter, mini step

ks621k30

Abstract: RFT Semiconductors Diode and Transistor 1980
Contextual Info: mMBSK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Darlington Transistor Modules Ratings and Characteristics 1.0 and molybdenum. This assembly is next soldered to a copper collector electrode along with a free-wheeling diode chip. The

Contextual Info: MOTOROLA Order th is docum ent by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw ork

mj power transistor speedup diode

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS The MJ10020 and MJ10021 Darlington transistors are designed for high-voltage,

BUT34

Abstract: 2N3763 MOTOROLA BUT34 equivalent MR854 diode 1N4934 1N4937 2N3763 2N6339 2N6438 MM3735
Contextual Info: MOTOROLA Order this document by BUT34/D SEMICONDUCTOR TECHNICAL DATA BUT34  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 50 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 850 VOLTS 250 WATTS

Contextual Info: M O TOROLA SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023 Designer’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 40 AMPERE NPN SILICON POW ER DARLINGTON TRANSISTORS 350 AND 400 VOLTS 250 WATTS Th e M J10022 and M J10023 Darlington translators are designed for high-voltage,

MR854 diode

Abstract: 1N4934 1N4937 2N3763 2N6339 2N6438 BUT33 MM3735 MR854
Contextual Info: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS

BUL45D2

Abstract: MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 Designer's  Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 5 AMPERES 700 VOLTS 75 WATTS Integrated Collector-Emitter Diode and Built-in Efficient

Motorola AN222A

Abstract: application MJ10023 U430B motorola 222A motorola SPS bipolar
Contextual Info: M OTOROLA Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA M J 1 0 0 2 3 Designer’s Data Sheet SW ITCHMODE Series NPN S ilicon Power Darlington Transistor w ith Base-Em itter Speedup Diode 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR

1N4937

Abstract: MJ10020 MJ10021 AN222A
Contextual Info: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS

1N4937

Abstract: MJ10020 MJ10021
Contextual Info: MOTOROLA Order this document by MJ10020/D SEMICONDUCTOR TECHNICAL DATA MJ10020 MJ10021  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS

application MJ10023

Abstract: MJ10022 MJ10023 NPN 300 VOLTS vce POWER TRANSISTOR npn darlington transistor 150 watts 1N4937 AN222A
Contextual Info: MOTOROLA Order this document by MJ10022/D SEMICONDUCTOR TECHNICAL DATA MJ10022 MJ10023  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer's 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 AND 400 VOLTS

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BPTD-1500D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 POWER OVER ETHERNET (PoE) EQUIPMENT PROTECTION 1.5 KP BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR DIODE CELLS MECHANICAL SPECIFICATION

mj10005 motorola

Abstract: 1N4937 MJ10004 MJ10005 transistor mj10005
Contextual Info: MOTOROLA Order this document by MJ10005/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ10005*  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *Motorola Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON

BUL44D2

Abstract: 100 Amp current 1300 volt diode ballast 300 watt Motorola Bipolar Power Transistor Data MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 Designer's  Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient

282oC

Abstract: diode cell "Power over Ethernet"
Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BPTD-3000D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 POWER OVER ETHERNET (PoE) EQUIPMENT PROTECTION 3.0 KP BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR DIODE CELLS MECHANICAL SPECIFICATION

"Power over Ethernet"

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BPTD-6000D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 POWER OVER ETHERNET (PoE) EQUIPMENT PROTECTION 6.0 KP BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR DIODE CELLS MECHANICAL SPECIFICATION