Untitled
Abstract: No abstract text available
Text: For Reference Date of Issue: March 17, 2011 OMRON Corporation OMRON RELAY&DEVICES Corporation SPECIFICATIONS This specification sheet is for reference only, Please request it again if a specification for receipt is necessary. Handled by Distribution Customer
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: For Reference Date of Issue: March 17, 2011 OMRON Corporation OMRON RELAY&DEVICES Corporation SPECIFICATIONS This specification sheet is for reference only, Please request it again if a specification for receipt is necessary. Handled by Distribution Customer
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP860
175oC
|
TA49059
Abstract: rhrp TA4905
Text: RHRP860_F085 Data Sheet September 2011 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.
|
Original
|
PDF
|
RHRP860
TA49059.
TA49059
rhrp
TA4905
|
8 pins 4 mosfet
Abstract: SLUP100
Text: CSD87331Q3D SLPS283 – SEPTEMBER 2011 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
|
Original
|
PDF
|
CSD87331Q3D
SLPS283
CSD87331Q3D
8 pins 4 mosfet
SLUP100
|
Untitled
Abstract: No abstract text available
Text: OLED SPECIFICATION Model No: EA W20016-XALG MODLE NO︓EA W20016-XALG RECORDS OF REVISION VERSION DATE 2011.11.18 DOC. FIRST ISSUE REVISED SUMMARY PAGE NO. First issue 2. General Specification Item Number of Characters Module dimension View area Active area
|
Original
|
PDF
|
W20016-XALG
|
Untitled
Abstract: No abstract text available
Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
|
Original
|
PDF
|
CSD87331Q3D
SLPS283A
CSD87331Q3D
|
MAX14980
Abstract: 63TC
Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
|
Original
|
PDF
|
CSD87331Q3D
SLPS283A
CSD87331Q3D
MAX14980
63TC
|
Untitled
Abstract: No abstract text available
Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
|
Original
|
PDF
|
CSD87331Q3D
SLPS283A
CSD87331Q3D
|
Untitled
Abstract: No abstract text available
Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
|
Original
|
PDF
|
CSD87331Q3D
SLPS283A
CSD87331Q3D
|
CSD87331Q3D
Abstract: No abstract text available
Text: CSD87331Q3D SLPS283A – SEPTEMBER 2011 – REVISED JANUARY 2012 www.ti.com Synchronous Buck NexFET Power Block FEATURES DESCRIPTION • • • • • • The CSD87331Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high
|
Original
|
PDF
|
CSD87331Q3D
SLPS283A
CSD87331Q3D
|
Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPW60R230P6 DataSheet Rev.2.0 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6 1Description TO-247
|
Original
|
PDF
|
IPW60R230P6
O-247
|
Untitled
Abstract: No abstract text available
Text: MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS P6 600VCoolMOS™P6PowerTransistor IPx60R230P6 DataSheet Rev.2.1 Final PowerManagement&Multimarket 600VCoolMOS™P6PowerTransistor IPW60R230P6,IPP60R230P6,IPA60R230P6 1Description
|
Original
|
PDF
|
IPx60R230P6
IPW60R230P6,
IPP60R230P6,
IPA60R230P6
O-247
O-220
|
5V 5A voltage regulator
Abstract: No abstract text available
Text: 19-6009; Rev 0; 8/11 MAX15108 Evaluation Kit Evaluates: MAX15108 General Description The MAX15108 evaluation kit EV kit provides a proven design to evaluate the MAX15108 high-efficiency, 8A, step-down regulator with integrated switches in a 20-bump wafer-level package (WLP). The EV kit is preset for 1.5V
|
Original
|
PDF
|
MAX15108
MAX15108
20-bump
5V 5A voltage regulator
|
|
2100a epoxy
Abstract: RF1601T2D RF1601
Text: RF1601T2D Data Sheet Fast recovery diodes RF1601T2D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common type. (TO-220) 2) Ultra Low V F
|
Original
|
PDF
|
RF1601T2D
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
2100a epoxy
RF1601T2D
RF1601
|
Untitled
Abstract: No abstract text available
Text: Data Sheet Fast recovery diodes RF1601T2D Applications General rectification Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Ultra Low V F 3) Very fast recovery 4) Low switching loss (1) (2) (3) Construction Silicon epitaxial planar
|
Original
|
PDF
|
RF1601T2D
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
|
Untitled
Abstract: No abstract text available
Text: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout
|
Original
|
PDF
|
LMZ12008
SNVS716E
LMZ12008
350kHz)
LMZ22010/08/06,
LMZ12010/06,
LMZ23610/08/06
|
Untitled
Abstract: No abstract text available
Text: DEMO MANUAL DC1743A LTM4613 8A, High Voltage Power µModule Regulator Description Demonstration circuit DC1743A features the LTM 4613EV, an EN55022 class B certified, high input and output voltage, high efficiency, switch mode step-down power µModule® regulator. The input voltage range is from 5V to 36V. The
|
Original
|
PDF
|
DC1743A
LTM4613
DC1743A
4613EV,
EN55022
LTM4613
dc1743af
|
Untitled
Abstract: No abstract text available
Text: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout
|
Original
|
PDF
|
LMZ12008
SNVS716E
LMZ12008
350kHz)
LMZ22010/08/06,
LMZ12010/06,
LMZ23610/08/06,
LMZ13610/08/06
|
SNVA425
Abstract: No abstract text available
Text: LMZ12008 www.ti.com SNVS716E – MARCH 2011 – REVISED MARCH 2013 LMZ12008 8A SIMPLE SWITCHER Power Module with 20V Maximum Input Voltage Check for Samples: LMZ12008 FEATURES 1 • • • • 2 • • • • • Integrated Shielded Inductor Simple PCB Layout
|
Original
|
PDF
|
LMZ12008
SNVS716E
LMZ12008
350kHz)
LMZ22010/08/06,
LMZ12010/06,
LMZ23610/08/06,
LMZ13610/08/06
SNVA425
|
Untitled
Abstract: No abstract text available
Text: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology low switching losses positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: low / medium power modules
|
Original
|
PDF
|
IGC11T120T8L
L7613V,
L7613P,
|
Untitled
Abstract: No abstract text available
Text: IGC11T120T8L IGBT4 Low Power Chip Features: • 1200V Trench & Field stop technology low switching losses positive temperature coefficient easy paralleling Qualified according to JEDEC for target applications 1 Recommended for: low / medium power modules
|
Original
|
PDF
|
IGC11T120T8L
L7613V,
L7613P,
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA0014U10000000 Version
|
Original
|
PDF
|
MA0014U10000000
D020210
MA0014U100000000
O-251
80pcs
4000pcs
|
Untitled
Abstract: No abstract text available
Text: ÏB H S - 5 4 C 1 3 8 R H Radiation Hardened 3-Line to 8-Line Decoder/Demultiplexer Septem ber 1995 Features Pinouts • Radiation Hardened EPI-CMOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T16 TOP VIEW - Total Dose 1 x 10s RAD(Si)
|
OCR Scan
|
PDF
|
MIL-STD-1835
CDIP2-T16
SA2995
80C85RH
HS-54C138RH
|