DCR1674SZ Search Results

Contextual Info: Si GEC PLESSEY junei997 SEMI CO NDUC TOR S DS4651-3.2 DCR1674SZ PHASE CONTROL THYRISTOR APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS 4200V DRM 3200A Jt AV 67000A TSM dVdt* 1000V/(is d l/d t 150A/(is

DCR1674SZ

Abstract: DCR1674SZ38 DCR1674SZ39 DCR1674SZ40 DCR1674SZ41 DCR1674SZ42
Contextual Info: DCR1674SZ DCR1674SZ Phase Control Thyristor Supersedes January 2000 version, DS4651-4.0 DS4651-5.1 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4200V ■ High Surge Capability IT AV 3940A ITSM 67000A dVdt* 1000V/µs dI/dt 150A/µs ■ High Mean Current

DCR1674SZ

Abstract: DCR1674SZ38 DCR1674SZ39 DCR1674SZ40 DCR1674SZ41 DCR1674SZ42 10000a diodes
Contextual Info: DCR1674SZ DCR1674SZ Phase Control Thyristor Supersedes January 2000 version, DS4651-4.0 DS4651-5.1 July 2001 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4200V ■ High Surge Capability IT AV 3940A ITSM 67000A dVdt* 1000V/µs dI/dt 150A/µs ■ High Mean Current

Contextual Info: @ M ITEL DCR1674SZ Phase Control Thyristor SEMICONDUCTOR Supersedes June 1997 version, DS4651 - 3.2 DS4651 -3 .3 March 1998 APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control. KEY PARAMETERS VDRM 4200V 't ,a v , 3200A

Contextual Info: DCR1674SZ DCR1674SZ Phase Control Thyristor Supersedes July 2001 version, DS4651-5.1 DS4651-6.1 January 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4200V IT AV 3940A ITSM 67000A dVdt* 1000V/µs dI/dt 200A/µs ■ High Surge Capability ■ High Mean Current

DCR1674SA

Contextual Info: DCR1674SA DCR1674SA Phase Control Thyristor Replaces DCR1674SZ issue July 2001 version, DS4651-5.1 FDS5647-1.0 August 2003 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4200V IT AV 3940A ITSM 67000A dVdt* 1000V/µs dI/dt 150A/µs ■ High Surge Capability

DCR1674SZ

Abstract: DCR1674SZ38 DCR1674SZ39 DCR1674SZ40 DCR1674SZ41 DCR1674SZ42
Contextual Info: DCR1674SZ DCR1674SZ Phase Control Thyristor Supersedes July 2001 version, DS4651-5.1 DS4651-6.1 January 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4200V IT AV 3940A ITSM 67000A dVdt* 1000V/µs dI/dt 200A/µs ■ High Surge Capability ■ High Mean Current

Contextual Info: DCR1674SZ DCR1674SZ Phase Control Thyristor Supersedes July 2001 version, DS4651-5.1 DS4651-6.1 January 2004 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4200V IT AV 3940A ITSM 67000A dVdt* 1000V/µs dI/dt 200A/µs ■ High Surge Capability ■ High Mean Current

Contextual Info: M ITEL DCR1674SZ Phase Control Thyristor SEMICONDUCTOR Supersedes June 1997 version, DS4651 - 3.2 DS4651 - 3 .3 March 1998 APPLICATIONS • High Pow er Drives. ■ High V oltage Pow er Supplies. ■ DC M otor C ontrol. KEY PARAMETERS 4200V DRM 3200A Jt AV

DCR504ST

Abstract: DCR604SE DCR720E DCR803SG DCR806SG DCR818SG DCR820SG DCR504
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces July 2002 version, AN5001-4.1 AN5001-5.0 October 2002 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the

RHODORSIL COMPOUND 5

Abstract: AN4839 DCR1674SZ 3M Touch Systems disc thyristor
Contextual Info: AN4839 Application Note TGD-1X AN4839 Clamping Of Power Semiconductors Application Note Replaces September 2000 version, AN4839-3.0 AN4839-3.1 July 2002 0.40 Thermal resistance - ˚C cm2/W 0.35 10.5 10.0 D.C. thermal resistance, Rth(j-hs) - (˚C/W) The Forward Voltage Drop and Thermal Resistance of a disc

DIODE GE

Abstract: DCR604SE DCR504S GE brand thyristor thyristor Vtm 6.5 DCR504ST DCR720E DCR803SG DCR806SG DCR818SG
Contextual Info: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces February 2003 version, AN5001-6.0 AN5001-7.0 February 2004 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the

ln 4871

Abstract: DCR504S
Contextual Info: AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note AN5001-1.1 June 1998 The use of the VTO, rT on-state characteristic model and a more accurate alternative. The inclusion of the theoretical terms VTO and rT in power semiconductor data sheets allows a simple means of calculating power

BST45

Abstract: DCR806 DCR604SE
Contextual Info: phase control th y ris to rs discs 1 Pt D isc D evices l2t @ T v| V IT TO @ T v) @ T vl (kA) (A2sx103) (V) (mil) 717 6.8 231 1.05 1850 1045 1511 2694 3600 2900 1641 2374 4230 5655 32.5 14 26.25 50 61.2 5280 975 3440 12500 18750 100-2100 100-2800 100-2800