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    DD 115 N 400 K Search Results

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    IP173

    Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
    Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)


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    PDF kuka-2003-inhalt IP173 kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08

    DD260N08

    Abstract: EUPEC DD 600 N mechanical arm powerblock dd eupec powerblock ND
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 260 N, DD 261 N ND 260 N, ND 261 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 260 N, ND 260 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte


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    PDF DD260N8 DD260N08 EUPEC DD 600 N mechanical arm powerblock dd eupec powerblock ND

    Untitled

    Abstract: No abstract text available
    Text: OBELUX AVIATION LIGHTS 8 May 2013 Obelux S-series LHC 350 Datasheet Page 1/3 Light head controller, power supply and fault alarm unit for Obelux MI- and HI- light series Key features - Suitable for up to two Obelux MI-series or one Obelux HI-series light heads


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    PDF FI-00380

    DD100GB80

    Abstract: HALF WAVE RECTIFIER CIRCUITS three phase half wave Rectifier 3 diodes 3 phase half-wave rectifier DD100GB ups single phase DD100GB40
    Text: DIODE MODULE DD KD 100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V


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    PDF 100GB40/80 E76102 DD100GB DD100GB40 DD100GB80 50/60HZ, DD100GB80 HALF WAVE RECTIFIER CIRCUITS three phase half wave Rectifier 3 diodes 3 phase half-wave rectifier ups single phase DD100GB40

    EUPEC 285 N

    Abstract: DD285N08
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 285 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 285 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung


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    PDF DD285N7 EUPEC 285 N DD285N08

    dd231

    Abstract: EUPEC powerblock EUPEC powerblock N1
    Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 231 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 231 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung


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    PDF DD231N6 dd231 EUPEC powerblock EUPEC powerblock N1

    Untitled

    Abstract: No abstract text available
    Text: DIODE MODULE DD KD 100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V


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    PDF 100GB40/80 E76102 DD100GB 30MAX 26MAX

    thyristor aeg

    Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
    Text: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors


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    PDF DT18N 75VDRM 00V/ns thyristor aeg aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200

    B2HKF

    Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
    Text: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6


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    Untitled

    Abstract: No abstract text available
    Text: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC


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    PDF 0D021A4

    115c hall

    Abstract: to92ua HALL Sensor TO92UA Transistor 115e 107 hall effect sensor
    Text: ♦ MICRONAS S ï ï S ’997 INTERMETALL HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Temperatiire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA 115E 115C - operates with magnetic fields from DC to 20 kHz


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    PDF HAL115 115c hall to92ua HALL Sensor TO92UA Transistor 115e 107 hall effect sensor

    ITT DIODE 125

    Abstract: to92ua ITT Semiconductors 115c hall HALL Sensor TO92UA ITT Intermetall itt capacitor ITT Semiconductor IEC-68-2-58 INTERMETALL
    Text: “ íJé 997 ITT INTERMETALL • 4fafl2711 DDGbS7E TMb ■ HAL115 Marking Code Hall Effect Sensor IC in CMOS technology Temperatiire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA 115E 115C - operates with magnetic fields from DC to 20 kHz


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    PDF 4fafl2711 HAL115 OT-89A: O-92UA: 4bfl2711 b27fl ITT DIODE 125 to92ua ITT Semiconductors 115c hall HALL Sensor TO92UA ITT Intermetall itt capacitor ITT Semiconductor IEC-68-2-58 INTERMETALL

    Ultrasonic Receive Transmit sensors

    Abstract: GP2W0104YP IEC60825-1
    Text: GP2W0104YP SHARP 115 kbps Transceiver IrDA Product Data Sheet FEATURES • Built-in Photodiode • Operating voltage 2.4 V to 5.5 V • Conforms to eye safety IEC60825-1, without exter­ nal resistor • This product shall not contain the following materi­


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    PDF GP2W0104YP IEC60825-1, gp2w0104yp-18 Ultrasonic Receive Transmit sensors GP2W0104YP IEC60825-1

    4021BF

    Abstract: No abstract text available
    Text: BU4021B/BU4021BF BU4021B BU4021 BF 8 7 j - y X ^ T ' f 7 ' 7 ' > 7 S U y Z S r 8-Bit Static Shift Register • W fi'+ jilS / D im e n s io n s U n it: mm BU4021B, BU 4021BF l i , 8 t' 7 h X $ f - f f t f t W 7 U-JU A * £ fc O 8 O (7) U y js K é Fn , 7 ?


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    PDF BU4021B/BU4021BF BU4021B BU4021 BU4021B, 4021BF

    DD85N

    Abstract: dd 61 n 600 DD 90 N 1400 k dd260
    Text: Rectifier diode modules Type Ifrmsm Vrrm V rsm Ifs m / i 2dt V TO R th C K Ivj max °c/w °C /W °c 1,2 0,2 150 It R th JC Wjmax tvj = t'j max sin. V m£2 38/ 83 31/100 0,8 7 Ifav m / ( c O utline = Vrrm + 100 V A V 10 ms. 10 ms, tvj max t, A A 2s tvj max


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    EUPEC DD 104 N 16

    Abstract: EUPEC DD 105 N 16 L EUPEC DD 31 800 EUPEC DD 600 eupec dd 76 n 1200 EUPEC DD 171 N EUPEC DD 89 DD 85 N 1600 EUPEC DD 105 N 16 157000
    Text: Type V rrm V r sm 'frm sm = V r rm blE D EUPEC Rectifier diode modules If s m / i 2d t Ifa vm ^ c 34Q32T? V TD Tt R th JC GEH « U P E C R thC K •tvj m a x Outline + 100 V A V 10 ms, 10 ms, t vj = tv i = ty j m ax tv j max f'.’j max fv j max 180 “el


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    PDF 34Q32T? EUPEC DD 104 N 16 EUPEC DD 105 N 16 L EUPEC DD 31 800 EUPEC DD 600 eupec dd 76 n 1200 EUPEC DD 171 N EUPEC DD 89 DD 85 N 1600 EUPEC DD 105 N 16 157000

    B2HKF

    Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
    Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °


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    VPtE

    Abstract: No abstract text available
    Text: TLC2201, TLC2201A JLC 2201B Advanced LinCMOS LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS D3173, N O VEM BER 1988 TLC2201B Is 100% Tested for Noise: 25 nV/VHz Max at f = 10 Hz 12 nV/VFiz Max at f = 1 kHz Low Input Bias Current . . . 1 pA Typ at T a = 25°C


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    PDF TLC2201, TLC2201A 2201B D3173, TLC2201B TLC2201A, VPtE

    74008

    Abstract: sumator
    Text: m U N ITR R CEM! M C Y 7 4 0 0 8 N M C Y 64008W C zterobitow y pefny sum ator U kiad s k ïa d a s i ç z e z t e r e c h s z e r e g o w o p o ì^ c z o n y c h j e d n o b lt o w y o h suraatorów i r ó w n o l e g l e g o u k la d u p r z e n i e e i e n i a . Z apew nia s z y b k i e d o d a w a n ie dwóch l i c z b c z t e r o b l to w y ch podaw anych na w e j i o i a Aq do


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    PDF 74008N 64008N /tanb-25Â Cj-50 74008 sumator

    Untitled

    Abstract: No abstract text available
    Text: Panasonic TU S.-VkQ M tziz/fyv 5 i/7 H U - m 7 l\r S .- 0 k Alum inium Electrolytic Capacitors Radial Lead Type Japan Malaysia Series: M Type: Style: Aluminium Electrolytic Capacitors/M A (Radial Leads) 0 4 /J IS C 5 1 4 1 Standard IECQ Certificated •


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    DD 90 N 1400 k

    Abstract: DD 115 N 400 K diode 1600 rectifier dd 31 n 12 DD 104 N K
    Text: Rectifier diode modules Type IpRMSM V rrm V rsm = V rrm + 100 Ifsm /¡zdt Ifavm^ c V TO U RlhJC RlhCK Wj max Outline V V A 10 ms, 10 ms, t., tvi -1,1. A kA2s " w „ 'v| tv, 'IIU, sin V mQ °c/w °C/W “C 0.8 7 1.2 0.2 150 1«, A/°C = 1 8 0 °e l Baseplate = 20 mm


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    dd260

    Abstract: No abstract text available
    Text: Netz-Dioden-Module Rectifier diode modules Modules à diodes pour applications réseau Typ Type Vrrm VrSM = Vrrm + 100 V Ifsm / i 2dt 10 ms, tv] max 10 ms, Wjmax A kA2s Ifrmsm A V Ifavm/Ic A/°C RthCK t'.'j max °C/W °c VfTO rT Rthjc tv,= tv, max ‘v,=


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    PDF 4600s= 80ld02Cl 600/TOO 34G32 dd260

    Untitled

    Abstract: No abstract text available
    Text: □PM DPS512S8N Dense-Pac Microsystems, Inc. MILITARY 512K X 8 CM OS SRAM MODULE O D ESC R IPT IO N : The DPS512S8N is a Military 512 K X 8 high-density, low-power static RAM module comprised of four ceramic 128K X 8 monolithic SRAM's, an advanced high-speed C M O S d eco d er and decoupling


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    PDF DPS512S8N DPS512S8N 600-mil-wide, 32-pin 100ns 120ns 150ns 30A034-10

    5 to 32 line decoder

    Abstract: ic709 XL08 IC-7090 ci 7 flu 0286 1611E JUPD22148CA XAF 0542 63ft
    Text: SEC j m * T i \ r x  4 X 8 C R O S S P O IN T S W IT C H W ITH C O N T R O L M E M O R Y c M ¿¿PD22148CAÜ, 5 to 32 n X ^ ^ U o s  îim M ~ V h Z 2 bit =7 >y f - 1 4 X 8 T 'g ^ iJ $ t l f c T t o ^"X f y f t t o y -y ? 3 2 l E < 7 T ^ n ? " x ^ v ^ c O ftim iiT K ^ X A * A , B , C , D, E ) iz-^-x. b


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    PDF uPD22148CA 5 to 32 line decoder ic709 XL08 IC-7090 ci 7 flu 0286 1611E JUPD22148CA XAF 0542 63ft