DD 115 N 400 K Search Results

thyristor aeg

Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
Contextual Info: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors

B2HKF

Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
Contextual Info: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6

Contextual Info: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC

IP173

Abstract: kuka 3 phase bridge fully controlled rectifier diode 1600 rectifier B6HK EUPEC tt 105 N 16 100N B6U 205 3 phase bridge rectifier B6u 08
Contextual Info: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:34 Uhr Seite 20 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 20 IsoPACK Bridge Rectifier Type 3 phase bridge rectifier, uncontrolled DD B6U 85 N 1 DD B6U 145 N 1) DD B6U 205 N 1) DD B6U 215 N 2)

115c hall

Abstract: to92ua HALL Sensor TO92UA Transistor 115e 107 hall effect sensor
Contextual Info: ♦ MICRONAS S ï ï S ’997 INTERMETALL HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Temperatiire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA 115E 115C - operates with magnetic fields from DC to 20 kHz

ITT DIODE 125

Abstract: to92ua ITT Semiconductors 115c hall HALL Sensor TO92UA ITT Intermetall itt capacitor ITT Semiconductor IEC-68-2-58 INTERMETALL
Contextual Info: “ íJé 997 ITT INTERMETALL • 4fafl2711 DDGbS7E TMb ■ HAL115 Marking Code Hall Effect Sensor IC in CMOS technology Temperatiire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA 115E 115C - operates with magnetic fields from DC to 20 kHz

Ultrasonic Receive Transmit sensors

Abstract: GP2W0104YP IEC60825-1
Contextual Info: GP2W0104YP SHARP 115 kbps Transceiver IrDA Product Data Sheet FEATURES • Built-in Photodiode • Operating voltage 2.4 V to 5.5 V • Conforms to eye safety IEC60825-1, without exter­ nal resistor • This product shall not contain the following materi­

4021BF

Contextual Info: BU4021B/BU4021BF BU4021B BU4021 BF 8 7 j - y X ^ T ' f 7 ' 7 ' > 7 S U y Z S r 8-Bit Static Shift Register • W fi'+ jilS / D im e n s io n s U n it: mm BU4021B, BU 4021BF l i , 8 t' 7 h X $ f - f f t f t W 7 U-JU A * £ fc O 8 O (7) U y js K é Fn , 7 ?

DD260N08

Abstract: EUPEC DD 600 N mechanical arm powerblock dd eupec powerblock ND
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 260 N, DD 261 N ND 260 N, ND 261 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 260 N, ND 260 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte

dz 140

Abstract: powerblock dd 31
Contextual Info: Rectifier Diode Modules Type Dioden-Module V rrm If r m s m If s m Ji2dt V A A 10 ms, A2s 10 ms, T v j m ax Tvi m ax V rsm = V rrm +100V If a v m / T c V TO A/°C V outline It R th jc R lh C K T v j m ax m £2 Tvj = °C/W 180° el °C/W °c T v j m ax T v j m ax

DD85N

Abstract: dd 61 n 600 DD 90 N 1400 k dd260
Contextual Info: Rectifier diode modules Type Ifrmsm Vrrm V rsm Ifs m / i 2dt V TO R th C K Ivj max °c/w °C /W °c 1,2 0,2 150 It R th JC Wjmax tvj = t'j max sin. V m£2 38/ 83 31/100 0,8 7 Ifav m / ( c O utline = Vrrm + 100 V A V 10 ms. 10 ms, tvj max t, A A 2s tvj max

EUPEC DD 104 N 16

Abstract: EUPEC DD 105 N 16 L EUPEC DD 31 800 EUPEC DD 600 eupec dd 76 n 1200 EUPEC DD 171 N EUPEC DD 89 DD 85 N 1600 EUPEC DD 105 N 16 157000
Contextual Info: Type V rrm V r sm 'frm sm = V r rm blE D EUPEC Rectifier diode modules If s m / i 2d t Ifa vm ^ c 34Q32T? V TD Tt R th JC GEH « U P E C R thC K •tvj m a x Outline + 100 V A V 10 ms, 10 ms, t vj = tv i = ty j m ax tv j max f'.’j max fv j max 180 “el

B2HKF

Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
Contextual Info: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °

Contextual Info: OBELUX AVIATION LIGHTS 8 May 2013 Obelux S-series LHC 350 Datasheet Page 1/3 Light head controller, power supply and fault alarm unit for Obelux MI- and HI- light series Key features - Suitable for up to two Obelux MI-series or one Obelux HI-series light heads

74008

Abstract: sumator
Contextual Info: m U N ITR R CEM! M C Y 7 4 0 0 8 N M C Y 64008W C zterobitow y pefny sum ator U kiad s k ïa d a s i ç z e z t e r e c h s z e r e g o w o p o ì^ c z o n y c h j e d n o b lt o w y o h suraatorów i r ó w n o l e g l e g o u k la d u p r z e n i e e i e n i a . Z apew nia s z y b k i e d o d a w a n ie dwóch l i c z b c z t e r o b l to w y ch podaw anych na w e j i o i a Aq do

DD100GB80

Abstract: HALF WAVE RECTIFIER CIRCUITS three phase half wave Rectifier 3 diodes 3 phase half-wave rectifier DD100GB ups single phase DD100GB40
Contextual Info: DIODE MODULE DD KD 100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V

Contextual Info: Panasonic TU S.-VkQ M tziz/fyv 5 i/7 H U - m 7 l\r S .- 0 k Alum inium Electrolytic Capacitors Radial Lead Type Japan Malaysia Series: M Type: Style: Aluminium Electrolytic Capacitors/M A (Radial Leads) 0 4 /J IS C 5 1 4 1 Standard IECQ Certificated •

DD 90 N 1400 k

Abstract: DD 115 N 400 K diode 1600 rectifier dd 31 n 12 DD 104 N K
Contextual Info: Rectifier diode modules Type IpRMSM V rrm V rsm = V rrm + 100 Ifsm /¡zdt Ifavm^ c V TO U RlhJC RlhCK Wj max Outline V V A 10 ms, 10 ms, t., tvi -1,1. A kA2s " w „ 'v| tv, 'IIU, sin V mQ °c/w °C/W “C 0.8 7 1.2 0.2 150 1«, A/°C = 1 8 0 °e l Baseplate = 20 mm

EUPEC 285 N

Abstract: DD285N08
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 285 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 285 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung

dd260

Contextual Info: Netz-Dioden-Module Rectifier diode modules Modules à diodes pour applications réseau Typ Type Vrrm VrSM = Vrrm + 100 V Ifsm / i 2dt 10 ms, tv] max 10 ms, Wjmax A kA2s Ifrmsm A V Ifavm/Ic A/°C RthCK t'.'j max °C/W °c VfTO rT Rthjc tv,= tv, max ‘v,=

dd231

Abstract: EUPEC powerblock EUPEC powerblock N1
Contextual Info: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information DD 231 N 28,5 35 6 115 80 9 18 M8 18 92 AK K A March 1998 DD 231 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Spitzensperrspannung

Contextual Info: □PM DPS512S8N Dense-Pac Microsystems, Inc. MILITARY 512K X 8 CM OS SRAM MODULE O D ESC R IPT IO N : The DPS512S8N is a Military 512 K X 8 high-density, low-power static RAM module comprised of four ceramic 128K X 8 monolithic SRAM's, an advanced high-speed C M O S d eco d er and decoupling

Contextual Info: DIODE MODULE DD KD 100GB40/80 UL;E76102 M Power Diode Module DD100GB series are designed for various rectifier circuits. DD100GB has two diode chips connected in series and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V

5 to 32 line decoder

Abstract: ic709 XL08 IC-7090 ci 7 flu 0286 1611E JUPD22148CA XAF 0542 63ft
Contextual Info: SEC j m * T i \ r x  4 X 8 C R O S S P O IN T S W IT C H W ITH C O N T R O L M E M O R Y c M ¿¿PD22148CAÜ, 5 to 32 n X ^ ^ U o s  îim M ~ V h Z 2 bit =7 >y f - 1 4 X 8 T 'g ^ iJ $ t l f c T t o ^"X f y f t t o y -y ? 3 2 l E < 7 T ^ n ? " x ^ v ^ c O ftim iiT K ^ X A * A , B , C , D, E ) iz-^-x. b