DD313 Search Results

DD313

Abstract: TSSOP16EX DD313-TSSOP TSSOP16 1 watt led driver circuit diagram 10 watt led driver circuit diagram SP-DD313-A IC A003
Contextual Info: DD313 Version : A.003 Issue Date : 2008/09/26 File Name : SP-DD313-A.003.doc Total Pages : 22 3-CHANNEL HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 新竹市科學園區展業一路 9 號 7 樓之 1 SILICON TOUCH TECHNOLOGY INC. 9-7F-1, Prosperity Road I, Science Based Industrial Park,

Contextual Info: M7E SIEMENS T> m Ö235b05 AKTIEN6ESELLSCHAF DD3133M G «SIEG x% XL~r-‘ b'3.-‘ 2>3~55 SAB 8289 Bus Arbiter SAB 8289 8 MHz SAB 8289-1 10 MHz • Provides M ulti-M aster System Bus Protocol » Four Operating Modes fo r Flexible System C onfiguration • Synchronizes SAB 8086/SAB 8088 Processors

DD313

Abstract: TSSOP16 3 watt LED driver dd313 driver led
Contextual Info: DD313 Version : PRE.002 Issue Date : 2006/1/15 File Name : SP-DD313-PRE.002.doc Total Pages : 15 3-CHANNEL HIGH CONSTANT CURRENT LED DRIVER with ERROR DETECTION 點晶科技股份有限公司 SILICON TOUCH TECHNOLOGY INC. 新竹市科學園區展業一路 9 號 7 樓之 1

DD313

Abstract: PS 4206 75-IT 2N2Q 2U06 2K2029 TRANSISTOR D1651 2N2027 2N2029 d0313
Contextual Info: UUU MIL SPECS □□□□125 DD313S2 S MILS M iL - S - 19500/2030 it 14 m Ì967 SUPfcRSEDlM MIL”S-19500/203C 3 March 1370 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTORS, REVERSE BLOCKING, SILICON, TYPES 2N2024, 2N2Q25, 2N2Q27, 2N2029, 2N203Q,

DD313

Abstract: DD3133G SCR 2N T-25-17 2N3649 2n3653
Contextual Info: 30E D f Z 7 m TTE'tëS? DD3133G 7 • S C S -T H O M S O N R ä f fle M m L ie ir ^ is iif flo e g "T - Z S - Q s 6 s -t h o m s o n 2 N 3 6 4 9 2 N 3 6 5 3 FAST SWITCHING THYRISTORS ■ GLASS PASSIVATED CHIP ■ HIGH STABILITY AND RELIABILITY ■ HIGH di/dt AND dv/dt RATINGS

sab80188

Abstract: SAB 8086 80188 siemens EM 235 cn
Contextual Info: 47E » • SIEMENS B235b05 GG313b4 T « S I E G SIEMENS AKTIENGESELLSCHAF High-lntegration SAB 80188/80188-1 8-Bit Microprocessor Preliminary SAB 80188 8 MHz • Integrated feature set - enhanced SAB 8088-2 CPU - clock generator - 2 independent high-speed DMAchannels

DD313

Contextual Info: IRLW/I620A Advanced Power MOSFET FEATURES M • ■ ■ ■ ■ ■ ■ B V Dss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10nA Max. @ VOS= 200V

Contextual Info: KM23C32000A CMOS Ma sk ROM ELECTRONICS 32M-Bit 2M X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C32000A is a fully static mask programmable ROM organized 2,097,152x16bit.lt is fabricated using silicon-gate CMOS process technology.

23C32000

Contextual Info: KM23C32000AG C MOS M a s k R OM ELECTRONICS 32M-BH 4M X 8/2M X 16 CMOS MASK ROM • Switchable organization 4,194,304 x8(byte mode) 2,097,152 x16(word mode) • Fast access time : 120ns (Max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)

DD313

Abstract: BTW 600 BTW39-50 T25-17 BTW39 T-25-17 0031350
Contextual Info: 30E D rz rz • 7*12^37 Q031354 T ■ ^p_2-S- " S G S -T H O M S O N ^ 7# 5 ¡LiCTlíMOígS B T W 3 9 -5 0 -► 1 2 0 0 S G S-TH0MS0N THYRISTORS ■ GLASS PASSIVATED CHIP ■ HIGH STABILITY AND RELIABILITY Thread: 1/4" -28 UNF : type N’ M6 on request : type N" + suffix M

Contextual Info: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 pm CMOS technology

Contextual Info: KM718V787 CMOS SRAM ELECTRONICS 128K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • Write Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V±5% Power Supply.

HM5118165J6

Contextual Info: HM5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi HM5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers

Contextual Info: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

delta doorbell c3500

Abstract: BIT 31936 ddr3 rdimm 244 pin layout PBAR23SZ 319435 DD313 Socket AM2 MSI G41 MOTHERBOARD CIRCUIT diagram peci specification LC5528
Contextual Info: Intel Xeon® Processor C5500/ C3500 Series Datasheet - Volume 1 February 2010 Order Number: 323103-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS

DD313

Contextual Info: Catalog 82007 Flexible Film Products Revised 8-96 .100 [2.54] Centerline Single Row Pin Housings Polarized Housings with Detent Window W ithout M ounting Ears .140 [3.56] .200 [5.08] .930 [23.63] Max. .560 M aterial: [14.22] B lack therm oplastic, flam e retardant,

DD313

Abstract: 88190-4
Contextual Info: AMP Catalog 82007 Flexible Film Products Revised 8-96 .100 [2.54] Centerline Double Row Pin Housings Polarized Housings with Detent Windows, Shrouded 4 Sides W ith M ounting Ears .930 2 3 .6 3 ] Max. M aterial: B lack therm oplastic, flame retardant, 94 V -0 rated

Contextual Info: KEMET Part Number: T356C475K020AT7301 T356C475K020ATTR Capacitor, tantalum, 4.7 uF, +/-10% Tol, 20V@85C, Lead Spacing=5.08 mm General Information Manufacturer: KEMET Electrical Specifications Value: 20V Voltage DC @ 125C: 13V Tolerance: Body Type: Temperature Range:

Contextual Info: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM P R E L IM IN A R Y A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance

DD313

Abstract: KM718V787-8 KM718V787-9 ZZ3A10 SRAM sheet samsung
Contextual Info: KM718V787 CMOS SRAM ELECTRONICS 128K X 18-Bit Synchronous Burst SRAM FEATURES GENERAL DESCRIPTION. • Synchronous Operation. • On-Chip Address Counter. • W rite Self-Timed Cycle. • On- Chip Address and Control Registers. • Single 3.3V±5% Power Supply.

counter lc48

Abstract: DZ 2101 AM79C02 AM79C03 T55B AF-2-A AXGX GD313
Contextual Info: S^E » • 02 57 5 2 7 0D313D4 587 IAÎ1D3 ADV MICRO TELECOM PRELIMINARY A m 7 9 C 0 2 /3 (A ) Adva^ Dual Subscriber Line Audio-Processing Circuit (DSLAC Device) Devices DISTINCTIVE CHARACTERISTICS ■ Software programmable: -SLIC impedance -Trans-hybrid balance

DD313

Abstract: 912001
Contextual Info: AMP Catalog 82007 Flexible Film Products Revised 8-96 .100 [2.54] Centerline Double Row Receptacle Housings Polarized Housings with Detents With Mounting Ears Pos. 1 Identification /_ TUI r1 nnnnnn nnnnn .320 [8.13] Material: .200 .600 [15.24 [5.08] 2 Pis.)

KM23C16101B

Abstract: DD313
Contextual Info: K M 2 3 C 16 1 O1 B CMO S Mas k ROM ELECTRONICS 16M-BÏÏ 2M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 2,097,152 x 8 bit organization • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.)

Contextual Info: L5380/53C80 SCSI Bus Controller FEATURES □ Asynchronous Transfer Rate Up to 4 Mbytes/sec □ Low Power CMOS Technology □ Replaces NCR 5380/53C80/ 53C80-40 and AMD Am5380/53C80 □ On-Chip SCSI Bus Drivers □ Supports Arbitration, Selection/ Reselection, Initiator or Target Roles