DD35 Search Results

dish

Abstract: DD356
Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode + D Mechanical Data

DD3520

Abstract: DD3520S DD3524 DD3524S
Contextual Info: DD3520/S & DD3524/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode +

Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode + D Mechanical Data

Contextual Info: Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD350N Key Parameters VDRM / VRRM 1800 V ITAVM 350 A TC=100 °C ITSM 13000 A VT0 0,75 V rT 0,4 mΩ RthJC 0,124 K/W Base plate 50 mm For type designation please refer to actual short form catalog

a117

Abstract: DD350N KM17
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD350N DD350N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages DD350N.K.-K

DD3524S

Abstract: DD3520 DD3520S DD3524
Contextual Info: DD3520/S & DD3524/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction Anode + C D Mechanical Data

Contextual Info: DD3520/S & DD3524/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction Anode + C D Mechanical Data

Contextual Info: DD3520/S & DD3524/S 35A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction      Low Leakage Low Cost High Surge Current Capability Low Forward Voltage Drop C-Band Terminal Construction

DD350N

Abstract: KM17
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD350N DD350N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages DD350N.K.-K

DD350N

Abstract: KM17
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD350N DD350N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages DD350N.K.-K

Contextual Info: DD3520/S & DD3524/S WTE POWER Pb 35A GLASS PASSIVATED AVALANCHE DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction Anode + C D Mechanical Data B Case: 8.4mm or 9.5mm Dish Type Press-Fit

Contextual Info: DD350/S – DD356/S 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction      Low Leakage Low Cost High Surge Current Capability Low Forward Voltage Drop C-Band Terminal Construction

PEAK TRAY

Abstract: DD356 DD352R
Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS 35A 8.4mm/9.5mm DISH DIODE Features ! Glass Passivated Die Construction ! ! ! ! ! Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C D Mechanical Data B ! ! ! ! ! Case: All Copper Case and Components

Contextual Info: Datenblatt / Data sheet N Netz-Dioden-Modul Rectifier Diode Module DD350N DD350N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages DD350N.K.-K

DD356

Abstract: Diode press-fit DD350 DD350SR DD350S DD354
Contextual Info: DD350/S – DD356/S WTE POWER SEMICONDUCTORS Pb 35A GLASS PASSIVATED DISH TYPE PRESS-FIT DIODE Features Glass Passivated Die Construction Low Leakage Low Cost High Surge Current Capability Low Forward C-Band Terminal Construction C Anode + D Mechanical Data

DD350N

Abstract: KM17
Contextual Info: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD350N DD350N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages DD350N.K.-K

lucas 953048

Abstract: d0352 MARKING 2581 ups 2581 v DD3520 DD3520A DD3573 DD3573A BSAU151
Contextual Info: LUCAS STABILITY ELEK LTD öl D • SbG7013 8 lc , .°_0 0 . l 7 _ _ . p _ S IL IC O N D IF F U S E D J U N C T IO N IN - L IN E R E C T IF IE R 50 - 5 0 0 V T R A N S IE N T R E V E R S E V O L T A G E ÜGD0Ü37 r b «LUCB DD3520 DD3520A DD3573 DD3S73A y The rectifiers are silicon diffused junction, am bient rated devices w ith a solid rectan­

Contextual Info: DD3573 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)2.0 @Temp. (øC) (Test Condition)25’

DD-561

Abstract: MALLORY 150 CAPACITORS capacitor 1000 MF 25v 4700 mf 100v MALLORY CAPACITORS cgs series Mallory Start Capacitors DDM-103 capacitor 200V 820 MF DD330 3300 mf 35v
Contextual Info: 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 1234567890123456789012345 CAP ACIT ORS CAPACIT ACITORS 1234567890123456789012345 RADIAL PC LEAD ALUMINUM ELECTROLYTIC CAPS 85° C 20% tolerance Volts Capacitance (mF) 10v 330, 470, 1000, 1200, 2200, 3300, 6800 mF

Contextual Info: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.08 05/2009 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most

AXP 188 ba

Abstract: 21071-DA 2mb1100 AXP 188 IC 5188b RSAD 5111 1M 21071-BA 82378IB 21071AA d327c
Contextual Info: m DECchip 21071-AA, 21072-AA Core Logic Data Sheet m A p ril 1994 21071-AA, 21072-A A Features: • Supports the entire fam ily of the DECchip 21064 Alpha AXP m icroprocessors • DECchip 21071-AA: 128-bit cache/64-bit memory • DECchip 21072-AA: 128-bit cache/128-bit

S12XS

Abstract: MC9S12XS256RMV1 S12XS256 Freescale HCS12X PFlash generator cr 665 bosch 128K8 9S12XS256 bosch can 2.0A RB1M transistor a614 PIN CONFIGURATION
Contextual Info: MC9S12XS256 Reference Manual Covers MC9S12XS Family MC9S12XS256 MC9S12XS128 MC9S12XS64 HCS12 Microcontrollers MC9S12XS256RMV1 Rev. 1.13 08/2012 freescale.com To provide the most up-to-date information, the document revision on the World Wide Web is the most

Contextual Info: KM48V512DT CMOS DRAM 512 K x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 524,288 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

5m48h

Abstract: S12XEP100 MC9S12XEP7682 xnor* Freescale S12XEP100 hcs12 moda modb xgate 5m48h 2M53 S12XES384 3M25J 9S12XEG128 MC9S12XEQ512 XEG128
Contextual Info: HCS12X Microcontrollers MC9S12XEP100RMV1 Rev. 1.19 12/2008 freescale.com Because of an order from the United States International Trade Commission, BGA-packaged product lines and part numbers indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010: S12XE products in 208 MAPBGA packages