TRAY FBGA 11X13
Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
Text: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72MS-P
TRAY FBGA 11X13
S72MS512PE0HF94V
MCP NAND sDR
BGA 15X15
137-Ball
MCP NAND DDR
S30MS-P
Spansion NAND Flash
Spansion NAND Flash DIE
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WS512S
Abstract: S29WS-S S29WS-P AMAX-16 WS512P WS128P 811-X SA-A11 8x116
Text: Migrating From S29WS-P to S29WS-R and S29WS-S Application Note By: Jan Gatermann, Keith Luo, Rudy Sterner and James Escamilla 1. Introduction Spansion is always seeking to cost reduce its product line. The 65 nm product families, S29WS-R and S29WS-S, continue that tradition while adding improvements such as higher densities, simplified command
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S29WS-P
S29WS-R
S29WS-S
S29WS-R
S29WS-S,
S29WS-S:
WS512S
S29WS-S
AMAX-16
WS512P
WS128P
811-X
SA-A11
8x116
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S72NS512RE0
Abstract: DDQ15 S72NS512RD0 spansion marking date code S29NS-R S72NS128
Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-R
S72NS512RE0
DDQ15
S72NS512RD0
spansion marking date code
S29NS-R
S72NS128
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a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
Abstract: No abstract text available
Text: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book April 2007 Revision A - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.
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Au1210â
Au1250â
Au1210
Au1250
a/S3C9004/P9004/C9014/Reset Software for Alchemy Au1000 Processor
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Untitled
Abstract: No abstract text available
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
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DRAM11
Abstract: ALN186 186-ball OB18-6
Text: S72NS-S Based MCPs MirrorBit Eclipse Flash Memory and DRAM 2 Gb 128M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/ Write, Burst Mode Flash Memory 512 Mb (32M x 16 bit) DDR DRAM on Split Bus S72NS-S Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-S
DRAM11
ALN186
186-ball
OB18-6
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S72NS128RD0AHBL
Abstract: 2118 FAMILY DRAM block diagram 2118 FAMILY DRAM S29NS-R S72NS512RD0 S72NS512RE0 S72NS128RD0AHBL0
Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-R
S72NS128RD0AHBL
2118 FAMILY DRAM block diagram
2118 FAMILY DRAM
S29NS-R
S72NS512RD0
S72NS512RE0
S72NS128RD0AHBL0
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DRAM11
Abstract: ADVA 186-ball NOR Flash
Text: S72WS-S based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit Eclipse NOR Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72WS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S72WS-S
DRAM11
ADVA
186-ball
NOR Flash
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14010B
Abstract: AU1250
Text: RMI Alchemy Au1210™ Navigation Processor and Au1250™ Media Processor Data Book October 2007 Revision B - Preliminary RMI Alchemy™ Au1210™ Navigation Processor and Au1250™ Media Processor Data Book - Preliminary 2007 Raza Microelectronics, Inc. All rights reserved.
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Au1210â
Au1250â
Au1210
Au1250
32-bit
14010B
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512MB NOR FLASH
Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2
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S72WS-N
16-bit
512MB NOR FLASH
BTA160
BGA 130 MCP NAND DDR
S72WS512NFFKFWZ2
Flash MCp nand DRAM 137-ball
ball 128 mcp
NAND FLASH BGA
S29WS256N
S72WS256ND0
S72WS256NDE
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c9ab
Abstract: S29NS-N marking w53 S72WS-N S75NS128NDE w933
Text: S75NS128NDE Based MCPs 1.8 Volt-only, Stacked Multi-Chip Product MCP x16 MirrorBit Flash Memory and DRAM 128 Mb Multiplexed, Simultaneous Read/Write, Burst Mode Code Flash Memory 256 Mb Multiplexed, Burst Mode Data Flash Memory 128 Mb SDR DRAM ADVANCE
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S75NS128NDE
c9ab
S29NS-N
marking w53
S72WS-N
w933
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ball 128 mcp
Abstract: MCP NAND, DRAM, NOR LJ512 S29NS-P S72NS128PD0 S72NS256PD0 S72NS512PD0 S72NS-P MCP NAND D3-D16
Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet
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S72NS-P
ball 128 mcp
MCP NAND, DRAM, NOR
LJ512
S29NS-P
S72NS128PD0
S72NS256PD0
S72NS512PD0
MCP NAND
D3-D16
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F3F3
Abstract: WS256 bus1
Text: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product
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ADQ11
Abstract: 12X12 POP PACKAGE ADQ14 d3d16
Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet
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S72NS-P
ADQ11
12X12 POP PACKAGE
ADQ14
d3d16
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SDM256D166D1R
Abstract: circuit diagram of ddr ram
Text: S72VS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-Only, Address-Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16M x 16 bit) DDR DRAM on Split Bus S72VS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72VS-R
8/16M
SDM256D166D1R
circuit diagram of ddr ram
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S72NS128PD0
Abstract: MCP NAND DDR S29NS-P S72NS256PD0 S72NS512PD0 S72NS-P tray bga 8x8 S72NS512PE0KFFGG
Text: S72NS-P MCP/PoP Memory System Solutions MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-P MCP/PoP Memory System Solutions Cover Sheet
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S72NS-P
S72NS128PD0
MCP NAND DDR
S29NS-P
S72NS256PD0
S72NS512PD0
tray bga 8x8
S72NS512PE0KFFGG
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S72XS128RD0AHBHE
Abstract: s72xs128 spansion top marking S29VS S72XS S29XS ADQ14 spansion marking date code
Text: S72XS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256 Mb 8/16M x 16 bit , 1.8 Volt-only, Address-High, AddressLow, Data Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128 Mb (8M x 16 bit) DDR DRAM on Split Bus S72XS-R Based MCPs Cover Sheet
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S72XS-R
8/16M
S72XS128RD0AHBHE
s72xs128
spansion top marking
S29VS
S72XS
S29XS
ADQ14
spansion marking date code
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DAN202KVA
Abstract: DAP202KVA
Text: "Ôï DE I T ñ H & ' m DDQ11Û0 1 T - 2 , 3 'O S ” lumm Diodes Low-Voltage Regulators LED Glass Sealed Package Type Absoluto Maximum Ratrngs(Ta=25"C) • '(m W ). -|F Vn - (m A ) r-.- .(V )- g fi; In '• - V ’ fi: ' (/<A) ' :Vr : Max. (V). • Max.
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DDQ11
DAN801
DAP801
DAN803
DAP803
DAN215
DAP215
DA216
DAN403
DAN202KVA
DAP202KVA
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Untitled
Abstract: No abstract text available
Text: TELTONE CORP SöE D a=i3a4M 5 h □□□m o T C E U T O N E :. M - T-7S-Z7-/I M-8880 DTMF TRANSCEIVER T he M -8880 is a complete D TM F Transmitter/Receiver that features adjustable guard time, automatic tone burst mode, call progress mode, and a fully compatible 6500/6800 micro
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M-8880
10601-120th
Limited/3375-14th
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Untitled
Abstract: No abstract text available
Text: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used
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PSX160,
PSX128B
PSX96B.
has27
DDD11SG
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km416c60j
Abstract: KM416C60
Text: KM416C60 CMOS DRAM 64Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal
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KM416C60
64Kx16
KM416C60/L
DQ8-DQ15
D02314b
km416c60j
KM416C60
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Viper L2A
Abstract: opti 82c596 82C558N 82C465MV opti 82C556
Text: 82C556/82C557/82C558N Viper Notebook Chipset Data Book Revision: 1.0 912-3000-032 May 25,199 5 Copyright Copyright 1995, OPTi Inc. All rights reserved. No part of this publication may be reproduced, transmitted, transcribed, stored in a retrieval system, or translated into any language or computer language, in any form or by any means, electronic, mechani
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82C556/82C557/82C558N
Viper L2A
opti 82c596
82C558N
82C465MV
opti 82C556
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02VO
Abstract: T 1892 equivalent
Text: MOSAIC SEMICONDUCTOR INC 4fc.E D b 3 S 3 3 7 ci o c i a i c m mofaic o b im o c 128KX0 SRAM MSM8128X-45/55/70 Issue 3.1: April 1992 Mosaic Semiconductor f Pin Definition Inc. 131,072 x 8 CMOS High Speed Static RAM Features NC A16 A14 1 2 3 A12 4 5 A7 A6 A5
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b3S337c
128KX0
MSM8128X-45/55/70
MIL-STD-883D
CA92121
02VO
T 1892 equivalent
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IN 4002 MIC diode
Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15
Text: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES
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SbM2E14
GD0113M
IN 4002 MIC diode
MA47054
1N5719 equivalent
ma-47266
1N5719 JANTX
diode D 07-15 15
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