DEPOSITION Search Results
DEPOSITION Datasheets Context Search
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302vContextual Info: SLD302V SONY 200m W High Power Laser Diode Description SLD 302V are gain-guided, high-power laser diodes fabricated by MOCVD. M OCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline |
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SLD302V E70776D13-HP 302v | |
transistor d 1556Contextual Info: D 100GHz WDM Filter Components for OADM Features • 27.5GHz and 50GHz clear channel passbands • ITU and custom wavelengths Bookham narrowband filters leverage the proprietary Advanced Energetic Deposition AED process to produce the industry’s best banded filter |
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100GHz 50GHz transistor d 1556 | |
Specification Quartz Crystals 6 Mhz
Abstract: 4512 Specification Quartz Crystals 5 Mhz
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CRB20
Abstract: CRB25
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CRB25 CRB25 RNR55 RLR07 CRB20 | |
Contextual Info: 新製品紹介 高送り工具用 PVD コーティングインサート PVD Coated Insert for High Efficient Machining Insert:JS4060 自動車産業用をはじめとした金型 Chemical Vapor Deposition)を用 加工時の溶着起因のチッピングの低 |
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JS4060 SCM440 | |
200G
Abstract: WDM Filter
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200GHz 64GHz 200G WDM Filter | |
sony 0642Contextual Info: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron |
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2SK677H5 2SK677H5 D0G312b sony 0642 | |
ABM30Contextual Info: BEAM LEAD SCHOTTKY BARRIER MIXER DIODES A SI’s Beam Lead Schottky Barrier Mixer Diodes are manufactured by the deposition of a suitable barrier metal on an epitaxial silicon layer to form a junction. These diodes are designed for applications up to 40 GHz for microwave integrated circuits and hybrid ele |
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-10dBm 10dBm 15dBm 20dBm ABM30 | |
SLD301V-21
Abstract: SLD301V SLD301 SLD301V-2 SLD301V-3 1R1H
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SLD301V SLD301V SLD301V-21 SLD301 SLD301V-2 SLD301V-3 1R1H | |
Contextual Info: S-CAAAB-5MG03 Quartz Thickness – Monitor Crystal FEATURE – – – – – – – Quartz thickness sensor for low-stress metal depositions Gold-Electrode Frequency: 5 MHz Low contact resistance High chemic stabilization Low-stress metal depositions: Au, Ag, Cu |
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S-CAAAB-5MG03 | |
thickness sensorContextual Info: S-CAAAA-5MG05 Quartz Thickness – Monitor Crystal FEATURE – – – – – – Quartz thickness sensor for low-stress metal depositions Gold-Electrode Frequency: 5 MHz Low contact resistance High chemic stabilization Low-stress metal depositions: Au, Ag, Cu |
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S-CAAAA-5MG05 thickness sensor | |
1x4 splitterContextual Info: PLC Splitter Module P1C Silica-on-Silica Planar Lightwave Circuit PLC Splitter • 1x4, 1x8, 1x16, 1x32, 1x64 modules* • Packaged Optical Waveguide chips based on Patented Plasma Chemical Vapor Deposition (P-CVD) technology for stable optical characteristics and high reliability |
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GR1209 GR1221 Y919-E-01B 1x4 splitter | |
Contextual Info: 技術トピックス 〈技術トピックス〉 伝導冷却酸化物超電導マグネットの開発 表1 当 社 で は 独 自 開 発 し た IBAD 法( Ion Beam マグネットの諸元 超電導材料 Assisted Deposition Process)を適用したイット |
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WR137 waveguideContextual Info: WAVEGUIDE ATTENUATOR ELEMENTS Product Description Florida RF Labs offers a co m p le te line of standard an d custom w a veg uide attenuator elements, Deposition of thin film metallization on a glass substrate with optical grade finish produces an extremely stable resistive film. A protective coating is evaporated |
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SONY 171Contextual Info: SONY SLD301V 100mW High Power Laser Diode Description The SLD301V is a gain-guided, high-power laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Low operating current Po = 90mW |
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100mW SLD301V SS-00259, SLD301V SS00259 net/Sonylnfo/procurementinfo/ss00259/ M-248 LO-11) SONY 171 | |
Contextual Info: SLD301V SONY. l O O m W High Power Laser Diode Description SLD301V is a gain-guided, high-powered laser diode fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Po=90mW |
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SLD301V SLD301V 100nnW | |
Contextual Info: PRODUCTS Our process begins with a high thermal conductivity ceramic core. High-stability or low-resistance-value resistors are then fit ted with terminations. The addi tion of high vacuum Ni-chrome film deposition assures consist ent long term stability. Parts are |
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Contextual Info: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current |
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SLD303V 500mW SLD303V 500mW | |
Contextual Info: SLD302V SONY» 2 0 0 m W High Power Laser Diode D e s c rip tio n P a c k a g e O u tlin e S L D 3 02 V are gain-guided, high-power laser diodes fabricated by MOCVD. U n it: m m R a tir e n c t M O CVD: Metal Organic Chemical Vapor Deposition F e a tu re s |
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SLD302V 200mW | |
Contextual Info: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron |
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2SK676H51 2SK676H5 | |
Contextual Info: SLD304V SONY, lOOOmW High Power Laser Diode Description SLD304V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD : Metal Organic Chemical Vapor Deposition Features • High power Recommended power output • Small operating current Package Outline |
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SLD304V SLD304V 900mW | |
Contextual Info: HVR and HVD Series — High Voltage Leaded Resistors/ Dividers Utilizing fine film resistor deposition technology SEI now offers a new level of stability and performance in leaded resistors. Competing hybrid manufacturing abilities have constraints due to their |
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Contextual Info: HVD Series — High Voltage Radial Leaded Plate Resistor Divider Utilizing fine film resistor deposition technology SEI now offers a new level of stability and performance in leaded resistor dividers. Competing product technologies have constraints due to their |
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ir cut filter
Abstract: 420625
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x2295 ir cut filter 420625 |