15DBM Search Results

1SV170

Contextual Info: SMM-008, -010 100-4000 MHz Low Noise Amplifier Preliminary Data Features - 2.2dB Noise Figure - Excellent VSW R: 1.7:1 Typical - 18dB Gain and 15dBm P1dB - Operates From Single 12V Supply - Low-Cost Surface-Mount Package SMM-010 Pm 0«'iion«tKHi Ground Ground

GALI-4F

Contextual Info: MMIC Amplifier GALI-4F+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 50mA 16.0 16.0 15.5 - 45°C 15.5 40mA 15.0 +25°C 15.0 50mA 14.5 +85°C 14.5 60mA 14.0 dB

Contextual Info: Plug-In LIMITER PLS-2 Typical Performance Data FREQUENCY MHz 100.0 140.0 180.0 220.0 260.0 320.0 360.0 400.0 440.0 480.0 520.0 560.0 600.0 640.0 680.0 740.0 780.0 820.0 860.0 900.0 POWER OUTPUT (15dBm IN) (3 dBm IN) (dBm) -3.51 -3.46 -3.40 -3.34 -3.29 -3.23

RDF-1245C

Contextual Info: GALI-4F Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-4F Reference Data: RDF-1245C S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -15dBm, Icc = 50mA, Vd = 4.34V @Temperature = +25degC

ERA-1

Abstract: era1 ERA-1 MMIC
Contextual Info: MMIC Amplifier ERA-1+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -15dBm, Temperature = +25°C INPUT POWER = -15dBm, CURRENT = 40mA 15 15 14 - 45°C 14 32mA 13 +25°C 13 40mA 12 +85°C 12 48mA 11 dB (dB) 11 10 10 9 9

MGF0920A

Abstract: IM335 pt 11400
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

AMMC-5620

Abstract: AMMC-5620-W10 AMMC-5620-W50
Contextual Info: Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier Data Sheet Features • Frequency Range: 6 - 20 GHz • High Gain: 19 dB Typical • Output Power: 15dBm Typical • Input and Output Return Loss: < -10 dB Chip Size: 1410 x 1010 µm 55.5 x 39.7 mils Chip Size Tolerance:± 10µm (± 0.4 mils)

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 875.0MHz Part No: MP06293 Model: TA1350A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device ESD 1. Input Power Level: 15dBm

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 942.5MHz Part No: MA04236 Model: TA0152A Rev No: 2 A. MAXIMUM RATING: 1. Input Power Level: 15dBm 2. DC voltage: 3V

1025MHz filter

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 942.50MHz Part No: MA08476 Model: TA0394A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 15dBm 2. DC voltage: 3V

murata SAW

Contextual Info: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 428.550MHz Part No: MP04692 Model: TA1484A Rev No: 1 A. MAXIMUM RATING: Electrostatic Sensitive Device 1. Input Power Level: 15dBm

InP HBT transistor

Abstract: STA-5063Z AMPLIFIER 5GHZ wifi
Contextual Info: STA-5063Z STA-5063Z 3.3GHz to 6.2GHz General Purpose 3.3V 15 dBm Amplifier 3.3GHz to 6.2GHz GENERAL PURPOSE 3.3V 15dBm AMPLIFIER Package: SOT-363, 2.0mmx2.1mm Product Description Features RFMD’s STA-5063Z is a general purpose class A linear amplifier which utilizes

Contextual Info: Coaxial Power Detector 50Ω - 50dBm to +15dBm, ZX47-50+ 10 - 8000 MHz Features Maximum Ratings O Operating Temperature Storage Temperature DC Power: Max. voltage Max. current Internal Power Dissipation Input Power O -40 C to 85 C -55OC to 100OC 5.7V 120mA

Ablebond 74-1

Contextual Info: Agilent AMMC-5620 6 - 20 GHz High Gain Amplifier Data Sheet Features • Frequency Range: 6 - 20 GHz • High Gain: 19 dB Typical • Output Power: 15dBm Typical • Input and Output Return Loss: < -10 dB Chip Size: 1410 x 1010 µm 55.5 x 39.7 mils Chip Size Tolerance:± 10µm (± 0.4 mils)

gaas fet marking J

Contextual Info: < Power GaAs FET > MGF1941AL Micro-X type plastic package DESCRIPTION The MGF1941AL power MES FET is designed for use in S to Ku band power amplifiers. Outline Drawing FEATURES High gain and High P1dB P1dB=15dBm, Glp=10 dB Typ. @ f=12GHz APPLICATION Fig.1

MGF0920A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm

ta018

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 881.5MHz Part No: MA05687 Model: TA0184A Rev No: 3 A. MAXIMUM RATING: 1. Input Power Level: 15dBm 2. DC voltage: -5 ~ +5V

Contextual Info: Features • • • • • • Broadband, cascadable gain block AGC control with gate bias Output power, 15dBm, typical V.S.W.R. 2:1 Max Gain flatness ± 0.5dB, typical On chip D.C. blocking capacitors at input and output 2 - 1 8 GHz Typical Performance

Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0920A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=32dBm TYP. @ f=1,9GHz,Pin=15dBm

Contextual Info: Mixers The content of this specification may change without notification 7/01/09 Mixers Plug- in A1 Level 23 0.01 to 2500MHz +23dBm LO,up to +15dBm RF Freq. Range MHz P/N RF/LO JXWBHP-A-5-500-23 fL-fU 5-500 JXWBHP-A-10-1000-23 Conversion Loss (dB) IF m LO-RF Isolation

Contextual Info: Surface Mount JCIR-4MH+ JCIR-4MH Image Reject Mixer Level 15 LO Power +15dBm 430 to 930 MHz Maximum Ratings Operating฀Temperature฀฀ Features •฀excellent฀image฀rejection,฀28฀dB฀typ. •฀low฀conversion฀loss,฀7.9฀dB฀typ. •฀aqueous฀washable

MDB-73H

Contextual Info: MMIC Surface Mount Wideband Double Balanced Mixer MDB-73H+ Level 15 LO Power 15dBm 2200-7000 MHz The Big Deal • High L-I Isolation, 46 dB typ • Useable as Up & Down Converter • Small Size 4 x 4 x 1mm CASE STYLE: DG1847 Product Overview MDB-73H+ is an advanced wideband frequency mixer fabricated using InGap HBT technology with integrated LO and RF Baluns. It has repeatable performance making it suitable for volume production. It is

Contextual Info: Surface Mount JCIR-4MH+ JCIR-4MH Image Reject Mixer Level 15 LO Power +15dBm 430 to 930 MHz Maximum Ratings Operating Temperature Features • excellent image rejection, 28 dB typ. • low conversion loss, 7.9 dB typ. • aqueous washable • J-leads for excellent solderability & strain relief

power amplifier 2-18GHZ

Abstract: LMA183 DC TO 18GHZ RF AMPLIFIER MMIC Ablebond
Contextual Info: 2-18 GHz MESFET Amplifier Filtronic LMA183 Solid State Features • • • • • • • • • • 5.5dB Typical Noise Figure 7.5dB Typical Gain 15dBm Saturated Output Power 12dB Input/Output Return Loss Typical 2-18GHz Frequency Bandwidth +4 Volts Dual Bias Supply