DESIGN NEW HIGH SPEED MOSFET Search Results

2SK3559

Abstract: IDA-20
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

2sk3665

Abstract: 2SK3559 2SK3628 2SK3652 2SK3637 2SK3665 equivalent input id
Contextual Info: New Achieving the industry's lowest Ron Qg along with high switching speed through the use of micro-cell structure and a newly developed design. Low On-Resistance, High-Speed Switching MOSFET Series „ Product Outline 2SK3628/2SK3559/2SK3665/2SK3637/2SK3652 are low On-resistance, high-speed switching MOSFETs ideal

si9402

Abstract: 470uF capacitor FDS6670A LQT12535C1ROM12 LTC1702 LTC1703 T510X477M006AS UP2B-2R2 switching high side mosfet MBR330T
Contextual Info: advertisement LTC1702/LTC1703 Switching Regulator Controllers Set a New Standard for Transient Response – Design Note 206 Dave Dwelley The LTC 1702 is the first in a new family of low voltage, high speed switching regulator controllers. It is designed to operate from a standard 5V logic supply and generate

n20eg

Abstract: 6N20E 369D AN569 MTD6N20E 6n20eg
Contextual Info: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching

Contextual Info: MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching

AN569

Abstract: MTW32N20E MTW32N20EG
Contextual Info: MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching

Contextual Info: MTW32N20E Power MOSFET 32 Amps, 200 Volts N−Channel TO−247 This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching

Contextual Info: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching

Contextual Info: MTD6N20E Power MOSFET 6 A, 200 V, N−Channel DPAK This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching

germanium

Abstract: 74HC244A 74HC589 ALI M 3329 B1 74HC163
Contextual Info: High-Speed CMOS Data Function Selector Guide Design Considerations Device Data Sheets [3 Ordering Information [4 W H A T ’S NEW ! DATA SHEETS ADDED DATASHEETS DELETED MC74HCU04A MC54/74HC390A MC54/74HC08 MC54/74HCT541 MC74HC76 MC54/74HC393A MC54/74HC540

IRG4PH50U

Abstract: eb 2030 *g4ph50u
Contextual Info: International IQR Rectifier PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

UV 111A

Abstract: PI-212 MOSFET 117c kick back Picor
Contextual Info: Not Recommended for New Design PI2123 TM Cool-ORing Series 15 Volt, 15 Amp Full-Function Active ORing Solution Description Features TM The Cool-ORing PI2123 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state

17-pin 5mm x 7mm Thermally Enhanced LGA Package

Abstract: PI2125 PI2125-00-LGIZ
Contextual Info: Not Recommended for New Design PI2125 TM Cool-ORing Series 30 Volt, 12 Amp Full-Function Active ORing Solution Description Features TM The Cool-ORing PI2125 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state

Contextual Info: International IOR Rectifier PD - 9.1612A IRG4PH40U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

Contextual Info: PD - 9.1612B International I R Rectifier IRG4PH40U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IRG4PH40U-E

Abstract: IRG4PH40U wifi 11n impedance cs 308 utl ups
Contextual Info: International IOR Rectifier PD - 9.1 612B IRG4PH40U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IRG4PH50U

Abstract: TO-247AC Package IRG4PH50U
Contextual Info: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

ge-20 transistor

Abstract: IRG4PH50UPBF 035H IRFPE30 960V
Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

irg4ph50u

Abstract: TO-247AC Package IRG4PH50U
Contextual Info: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: IRFPE30 IRG4PH40
Contextual Info: PD - 95187 IRG4PH40UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

TO-247AC Package IRG4PH50U

Abstract: 24V 10A SMPS IRG4PH50U 91574
Contextual Info: PD - 9.1574 IRG4PH50U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: IRFPE30
Contextual Info: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

035H

Abstract: IRFPE30 u1624
Contextual Info: PD - 95187 IRG4PH40UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than