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    DEVICE MARKING Search Results

    DEVICE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    DEVICE MARKING Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DEVICE MARKING CONVENTIONS-MISC National Semiconductor Device Marking Conventions Original PDF

    DEVICE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NATIONAL SEMICONDUCTOR MARKING CODE sot

    Abstract: national marking code NATIONAL SEMICONDUCTOR MARKING CODE DEVICE MARKING CODE table sot-23 MARKING CODE ZA On semiconductor date Code dpak YEAR A national top marking codes national marking date code national marking code sot sot23 mark code KS
    Text: Device Marking Conventions National Semiconductor marks devices sold in order to provide device identification and manufacturing traceablility information. The method of presenting the information marked on the device is dependent on the size of the device package


    Original     		PDF CSP-9-111S2) CSP-9-111S2. NATIONAL SEMICONDUCTOR MARKING CODE sot national marking code NATIONAL SEMICONDUCTOR MARKING CODE DEVICE MARKING CODE table sot-23 MARKING CODE ZA On semiconductor date Code dpak YEAR A national top marking codes national marking date code national marking code sot sot23 mark code KS

    1N4148WT

    Abstract: 1N4448WT marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change
    Text: 1N4148WT / 1N4448WT / 1N914BWT High Conductance Fast Switching Diode Features • • • • • • • Device Marking Code Device Type Device Marking 1N4148WT E1 1N4448WT E2 1N914BWT E3 Fast Switching Diode Trr <4.0nsec Flat Lead, Surface Mount Device Under 0.70mm Height


    Original     		PDF 1N4148WT 1N4448WT 1N914BWT 1N4148WT 1N4448WT OD523F OD-523F marking codes fairchild 1N914BWT 914BWT FAIRCHILD DIODE Fairchild marking change diode Fairchild Diode Marking Change

    Untitled

    Abstract: No abstract text available
    Text: Device Orientation www.vishay.com Vishay Siliconix Device Orientation for TO-252 and TO-263 T5 DEVICE ORIENTATION PACKAGE METHOD TO-252 T5 Marking UPWARD User direction of feed DEVICE ORIENTATION PACKAGE METHOD TO-263 T5 User direction of feed Revision: 05-Nov-13


    Original     		PDF O-252 O-263 O-252 05-Nov-13

    FAIRCHILD SMD MARKING

    Abstract: 1N4148WS Small Signal Diodes 1N4448WS fairchild smd marking code 1N914BWS smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS
    Text: 1N4148WS / 1N4448WS / 1N914BWS Small Signal Diodes • • • • • • • Device Marking Code Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 General Purpose Diodes Fast switching Device TRR < 4.0 ns Very Small and Thin SMD package Moisture Level Sensitivity 1


    Original     		PDF 1N4148WS 1N4448WS 1N914BWS 1N4148WS 1N4448WS OD-323F 1N914BWS FAIRCHILD SMD MARKING Small Signal Diodes fairchild smd marking code smd marking QT GENERAL SEMICONDUCTOR SMD DIODES 1N4148WS/1N4448WS/1N914BWS

    transistor Y4

    Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
    Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    Original     		PDF FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80

    BAS19

    Abstract: BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR
    Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19 BAS19LT1 BAS20 BAS20LT1 BAS21 BAS21LT1 sot23 marking JR

    BAS19LT1

    Abstract: sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c
    Text: BAS19LT1, BAS20LT1, BAS21LT1 Preferred Devices High Voltage Switching Diode • Device Marking: BAS19LT1 = JP http://onsemi.com Device Marking: BAS20LT1 = JR Device Marking: BAS21LT1 = JS HIGH VOLTAGE SWITCHING DIODE 3 CATHODE MAXIMUM RATINGS Rating Symbol


    Original     		PDF BAS19LT1, BAS20LT1, BAS21LT1 BAS19LT1 BAS20LT1 BAS19 BAS20 BAS21 r14525 BAS19LT1 sot-23 MARKING CODE JS BAS19 BAS20 BAS20LT1 BAS21 BAS21LT1 SOT23 Marking JX marking 556c

    FMBA0656

    Abstract: transistor marking E2 Supersot 6 transistor marking c1
    Text: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.


    Original     		PDF FMBA0656 300mA. fmba0656 lwpPr33 transistor marking E2 Supersot 6 transistor marking c1

    marking Y1 transistor

    Abstract: fairchild pin 1 marking
    Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


    Original     		PDF FMB2227A 300mA. marking Y1 transistor fairchild pin 1 marking

    PART NUMBER MARKING SC70-6

    Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
    Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching


    Original     		PDF FFB3946 SC70-6 2N3904 2N3906 PART NUMBER MARKING SC70-6 pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70

    marking Y1 transistor

    Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
    Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring


    Original     		PDF FMB2227A 300mA. 150mA, 300mA, 150mA 300mA 100kHz 100MHz lwpPr19 marking Y1 transistor transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A

    2N55551

    Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


    Original     		PDF 2N5550, 2N5551 2N5550 2N5550/D 2N55551 2N5551 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM

    2n5551

    Abstract: 2N55551 2N5551 circuit 2n5550
    Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit


    Original     		PDF 2N5550, 2N5551 2N5550 2N5551 2N55551 2N5551 circuit

    TCBAV19W

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking TCBAV19W TCBAV20W TCBAV21W


    Original     		PDF 400mW OD-123 TCBAV19W TCBAV20W TCBAV21W TCBAV19W

    diode sod-123 marking code 120

    Abstract: marking H1
    Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking TCBAV19W TCBAV20W TCBAV21W


    Original     		PDF 400mW OD-123 TCBAV19W TCBAV20W TCBAV21W diode sod-123 marking code 120 marking H1

    bc490

    Abstract: bc490a
    Text: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO −80 Vdc Collector-Base Voltage


    Original     		PDF BC490, BC490A, BC490B BC490B bc490 bc490a

    BC490A

    Abstract: bc490
    Text: BC490, BC490A, BC490B High Current Transistors PNP Silicon • Device Marking: 490 Device Marking: 490A Device Marking: 490B http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –80 Vdc Collector-Base Voltage


    Original     		PDF BC490, BC490A, BC490B BC490B BC490A bc490

    diode sod-123 marking code 120

    Abstract: SOD-123 marking code H3
    Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking TCBAV19W TCBAV20W TCBAV21W


    Original     		PDF 400mW OD-123 TCBAV19W TCBAV20W TCBAV21W diode sod-123 marking code 120 SOD-123 marking code H3

    transistor Y2

    Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
    Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    Original     		PDF FMB3946 100mA 100MHz 100MHz 100uA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp Supersot 6

    diode sod-123 marking code 120

    Abstract: No abstract text available
    Text: PRELIMINARY DATASHEET 400mW SOD-123 SURFACE MOUNT DEVICE MARKING CODE: Small Outline Flat Lead Plastic Package High Voltage & High Conductance Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG Device Type Device Marking BAV19W BAV20W BAV21W H1


    Original     		PDF 400mW OD-123 BAV19W BAV20W BAV21W diode sod-123 marking code 120

    MARKING 4 SOD523

    Abstract: No abstract text available
    Text: TAK CHEONG PRELIMINARY DATASHEET 200mW SOD-523 SURFACE MOUNT Absolute Maximum Ratings Symbol PD TSTG TJ DEVICE MARKING CODE: Device Type Device Marking TC1SS400 E4 TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Value


    Original     		PDF 200mW OD-523 TC1SS400 MARKING 4 SOD523

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    OCR Scan     		PDF FMB1020 300mA. 10OuA 100mA 150mA 200mA, 100MHz 10OuA, fmb1020

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23