DI 762 TRANSISTOR Search Results

Di 762 transistor

Abstract: transistor a015 transistor npn a 1930 wacom connector wacom 33w NPN 13MM PH1920-33
Contextual Info: an AMP company Wireless Bipolar Power Transistor, 33W 1930 - 1990 MHz PHI 920-33 v2.01 Features NPN Silicon Microwave Power Transistor Common Emitter Class AB Operation Internal Input and Output Impedance Matching Diffused Emitter Ballasting Gold Metallization System

ic 109b

Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Contextual Info: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling

Contextual Info: Rev 3: Nov 2004 AO4413, AO4413L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable

Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM

AO4413L

Abstract: AO4413
Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413/L uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM

Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: AO4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4413 uses advanced trench technology to provide excellent RDS ON , and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.

AOD403

Contextual Info: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

Contextual Info: Rev 3: Nov 2004 AOD403, AOD403L Green Product P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance

AOD403

Abstract: AOD403L
Contextual Info: AOD403 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD403 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for

BUZ171

Contextual Info: SIEMENS BUZ 171 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 2 Pin 1 Pin 3 D G S Type Vbs b f f DS on Package Ordering Code BUZ171 -50 V -8 A 0.3 Q TO-220 AB C67078-S1450-A2 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: 712T237 D04LEGÔ 7bb •SGTH / = 7 SGS-THOMSON Ä 7# S T P 3 N 100X 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100XI . . ■ . . ■ V dss RDS on Id 1000 V <61! 1.6 A AVALANCHE RUGGED TECHNO LOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

BUK445

Abstract: BUK445-60A BUK445-60B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

2N5754-2N5757

Abstract: 2N5754 RCA Triacs 2N5756 2N5757 rca triac 2N5755 E03G RCA TO-205
Contextual Info: G E SOLI» STATE 3875081 G E 01 SO LID STATE D E | 3Û7SG01 00177SS 7 | ~ 01E 17752 Triacs 2N5754-2N5757 File Number 414 2.5-A Silicon Triacs Features: • ■ ■ ■ Gate sen sitivity - 25 mA di/dt cap ab ility -1 0 0 A /fis L o w sw itch in g lo sse s Low -on-state voltage at high cu rren t levels

TC-5854

Abstract: 2SK479
Contextual Info: NEC m M O S Field E ffe c t P o w e r T ra n s is to r * = r i\ r x 2SK479 N f - t i ' ^ ' 7 -M O S FET x if f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use > M ^ ”7 - M 0 S F E T T t > t & 2SK479i±, ^ ^ H / P A C K A G E DIMENSIONS

2SC3733

Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Contextual Info: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier

la 5531

Abstract: TC6116 TC-6116 TC 6116 fn1a3q FA1A3 Transistor L83
Contextual Info: 7 s— S • 2 / — r* FAI A 3Q Compound Transistor # n m i t m ± : mm 2.8 + 0.2 1.5 (R i = 1.0 kQ, R 2= 10 kQ) o FN1A3Q £ ^ > v° 'J / 0 . 65-0.15 > ? 'J T'féffl T 'è £ 1" ( T a = 25 ° C ) g m -x. i 7 9 •^ -X fa ltE ?7f£) ^ u ? i7 ¡li;£

Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts h“FE A V CE V Temp.—°C 25 CD 'c V CEV^SUS* V 40 40 40 40 55 55 55 65 140 60 60 60 60 100 100 100 90 160 20-60 35-100 20-80 25-100 20-60 35-100 35-100 30-125 30-125 0.2 0.2 0.1 0.45 0.2 0.2

rca 40411

Abstract: RCA 40251 2N3055 386 RCA rca 2N3771 power circuit 3771 E1 BD182 rca 2n 3055 BD181 rcs258 rca 40363
Contextual Info: Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d V CEO(sus) V •c V C E V *SUS* V \ Z ç £ { s a t )—V 'C E X - mA h FE Temp.—°C V CE V A 25 2N3055 (Hometaxial) FA M ILY (n-p-n) Hometaxial-Base, General Purpose f j = 0.8 M H z min; P j to 150 W max

TRANSISTOR BJ 033

Abstract: 2SB1068 JAN 5751 m5ss
Contextual Info: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm

ail4m

Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
Contextual Info: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±

c 3281 transistor

Abstract: J196 lm 4011 TL 5551 2SJ196 511-N TI484 i4141 ScansUX882 sd 484 ip
Contextual Info: Mos M O S Field Effect Transistor 2 S J 1 9 6 P 2SJ196 l i P i z * f t ? ' / « x i jjS Œ MOS F E T V , 5 V > 7 f > I C mm V & tl mm / i f t t » MOS F E T Ü t Òtzòb, i - ? , H U MOS F E T &i # a r v* 'j I / —, V u / O * ^ < 7 7 5 . 2 MAX muglili: