2N6253 Search Results

2N6253

Contextual Info: Product Specification www.jmnic.com 2N6253 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low saturation voltage ・Wide safe operating area ・High dissipation capability APPLICATIONS ・Series and shunt regulators ・High fidelity amplifiers

2N6253

Contextual Info: 2N6253 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6254

Abstract: 2N6253 2n6371 e978
Contextual Info: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.

Contextual Info: 2N6253 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2n3055 IC

Contextual Info: POWER TRANSISTORS TYPE NO 2N3055 PT MAXIMUM RATINGS @ k 25°C B V c b o B V c eo B V ebo A V V V Watts 117 100 A V Sat Test Voltages Conditions Vet V be Ic I b I ebo V A A V ma 70 4 4 1.1 hfe C» Ic MIN MAX 60 7 15 20 VcE 4 1.8 .4 5.0 2N6253 115 55 45 20 70

Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2N3055

Abstract: 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

2N6254

Abstract: 2N6253 2n6371 IC16 Packages 1
Contextual Info: 2N6253 - 2N6254 - 2N6371 HIGH POWER SILICON NPN TRANSISTORS The 2N6253, 2N6254, and 2N6371 are silicon NPN transistors intended for a wide variety of high-power applications. The construction of these devices renders them highly resistant to second breakdown over a wide range of operating conditions.

2N6371

Abstract: 2N6254
Contextual Info: 2N6253, 2N6254, 2N6371 CDÎL 2N6253, 6254, 6371 NPN POWER TRANSISTORS High-fidelity Amplifier and Power Switching Circuit Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 — - 6.35 0,96 - 29,90

2N6253

Abstract: 25V 3A NPN
Contextual Info: SavantIC Semiconductor Product Specification 2N6253 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Wide safe operating area ·High dissipation capability APPLICATIONS ·Series and shunt regulators ·High fidelity amplifiers

Jan2N3055

Contextual Info: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100

Contextual Info: 2N6253 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N3035

Abstract: 2n6254
Contextual Info: POWER TRANSISTORS V Sat Test I Voltages Conditions | Ic VCE Iebo V be V A V A ma FT [ MAXIMUM RATINGS-1 • « 25“C 1:iv r?n 1: « r a i i : V A V V Watts _ « ä> hFE @ MIN MAX le A VCE 2N3055 117 100 60 7 15 20 70 ~4~ 4 1.1 1.8 4 .4 Ul Ö TYPE NO. 2N6253

Contextual Info: 2N6253 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)55 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5m° @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15

2n6254

Abstract: rca 2n6254 2N6371 2N6253 2n6254 rca ITT 2201 i944
Contextual Info: P ow er Transistors File N um b er HARRIS 2N6253, 2N6254, 2N6371 1077 SEMICOND SECTOR 27E D H 4302571 DDLTIhS T *HAS T - 3 3 -1 3 High-Power Silicon N-P-N Transistors For Industrial and C om m ercial Use Features: • Maxim um safe-area-of-operation curves

2N6254

Abstract: rca 2n6254 2N6253 2N6371 N6253 2N625 92CS-20C74 2N6371 RCA
Contextual Info: 01 3875081 G E SOLID DE | 3 Ö 7 5 G Ö 1 0D17434 4 STATE General-Purpose Power Transistors 01E 17434 3 2N6253, 2N6254, 2N6371 File Number 1077 High-Power Silicon N-P-N Transistors 4For Ind ustrial and C o m m e rc ia l Use

terminals of 2n3055

Abstract: 2n3055 2N4211 2N3238 2N3239 TO111 package 2N3667 2N3236 2N3240 2N5882
Contextual Info: mI m J E L E C T R O N IC S , INC. |-17 COLLECTOR CURRENT = 15 AMPS NPN TYPES VCEO sus Volts v CBO Volts 2N3055 JA N 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO -3 TO -3 100

Contextual Info: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3

Contextual Info: Power Transistors TO-3 Case Continued TYPE NO. •c (A) NPN PNP Pd (W) bvceo (V) (V) hFE 8 lc »TYP (A) VCE(SAT) @ic (V) (A) MAX h *TYP (MHZ) MIN MIN MIN MAX 10 125 110 100 20 100 5.0 3.5 10 4.0 2N6249 10 175 300 200 10 50 10 1.5 10 2.5 2N6250 10 175 375

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

2N3055

Abstract: 2N3055S 2SC1308 2N3055HV 2N3773 2N4347 2N6253 2N6257 2N6371 2N6371HV
Contextual Info: TO-3 WtiJâMSk DIM A B C D E F G H J K L M rsn MIN MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15 12,25 26,67 4,19 - 6,35 0,96 29,90 10,69 5,20 16,64 11,15 - 3,84 PIN CONFIGURATION 1. BASE 2. EMITTER 3. COLLECTOR ALL DIMENSIONS ARE IN M.M. TO-3 Power Package Transistors NPN

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

2N6248

Abstract: 2N6249 2N6250 2N6251 2N6253 2N6254 2N6282 2N6283 2N6284 2N6285
Contextual Info: Power Transistors TO-3 Case Continued TYPIE NO. •c (A) NPN PNP Pd (W) MAX bvcbo bvceo @ hFE lC *TYP (V) (V) MIN MIN MIN MAX (A) V CE(SAT) @ ic (V) (A) MAX fT *TYP (MHZ) MIN 10 125 110 100 20 100 5.0 3.5 10 4.0 10 175 300 200 10 50 10 1.5 10 2.5 2N6250