DIE BONDING Search Results

Contextual Info: Packaging - Handling Gallium Arsenide Die Handling Gallium Arsenide Die Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding

IXTH110

Abstract: 851 36 RG 16 26 ixth110n25t IXTD110N25T-8W as001 A114B dimensions
Contextual Info: Preliminary Technical Information Trench Gate Power MOSFET Die IXTD110N25T-8W VDSS = 250V N-Channel Enhancement Mode Die Outline Notes: 1. Die Thickness: 200 ± 25 m 2. Die Size Tolerance: ± 50 μm 3. Top Bonding Pad Metal: 30 KÅ nominally thick Al 4. Back Metal: 3 layers of Ti, Ni & Au;

Die Attach epoxy stamping

Abstract: 60022 pressure low die attach coefficient of thermal expansion of thermal conductive pressure sensitive adhesive
Contextual Info: Application Note Handling Gallium Arsenide Die Rev 2 INTRODUCTION Gallium arsenide die have physical properties that require special care in assembly to ensure high yields and good reliability. A few simple precautions in the die mounting and wire bonding operations

Contextual Info: Chip Mounting and Handling of GaAs MMIC Chips CHIP DIE DOWN BONDING TECHNIQUES Die Attach The important considerations for die attach are to have low thermal resistance, strong mechanical bond over the desired temperature range, and no damage occurring to the chip

Contextual Info: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:

LP0701

Contextual Info: Supertex inc. LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length1 Width1 Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None (mils) LP0701 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si

MAX3970

Contextual Info: Application Note: HFAN-8.0.1 Rev.1; 04/08 Understanding Bonding Coordinates and Physical Die Size Maxim Integrated Products Understanding Bonding Coordinates and Physical Die Size MAX3970 3 1 Introduction When calculating pad coordinates, there is often confusion between the die size specified in the data

LND150

Contextual Info: Supertex inc. LND150 Die Specification Pad Layout 2 3 1 0,0 Backside: Source Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 11 ± 1.5 None 1 (mils) LND150 1 (mils) Back Side Bonding Pad Material Source Voltage

siemens matsua kondensator

Abstract: Siemens gleichrichter MKK-DC
Contextual Info: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der

Contextual Info: Application Note Switch Die Measurement Fixture Rev 0 RELEVANT PRODUCTS • calibration structure and the other 24 elements are used to measure die. Figure 1 illustrates a measurement element for a single pole, double throw SPDT switch die. All ANADIGICS Switch Die

leistungs dioden siemens

Abstract: Siemens Electromechanical Components Siemens gleichrichter ferritkerne thyristor eupec
Contextual Info: Leistungselektronik wird zunehmend integriert Mehr Power im System Die elektronische Revolution findet nicht nur in der digitalen Welt statt; für die Zukunft mindestens genauso wichtig sind die Herausforderungen beispielsweise an die Leistungselektronik. Das beweist der derzeitige Boom im Power-Bereich. Einer der

PVAPOX

Contextual Info: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate

2N6660

Abstract: 2N6660-1
Contextual Info: 2N6660 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) 2N6660 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN2222NC

Abstract: a0513
Contextual Info: VN2222NC Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 70 85 11 ± 1.5 Au 1 (mils) VN2222NC 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TN0604

Contextual Info: TN0604 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 65 50 11.0 ± 1.5 Au 1 (mils) TN0604 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN0808

Contextual Info: VN0808 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VN0808 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VN0550

Contextual Info: VN0550 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VN0550 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VP0106

Contextual Info: VP0106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 37 37 11 ± 1.5 Au 1 (mils) VP0106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

LP0701

Contextual Info: LP0701 Die Specification Pad Layout 1 2 3 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness (mils) Back Side Metal 50 70 11 ± 1.5 None 1 (mils) LP0701 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TP5322

Contextual Info: TP5322 Die Specification Pad Layout 1 2 0,0 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 56 8.0 ± 1.0 Au 1 (mils) TP5322 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

TN2130

Contextual Info: TN2130 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TN2130 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

VP2106

Contextual Info: VP2106 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) VP2106 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: /= T SGS-THOMSON * 71 HD g»I[Lli(gTIS iD(gi IRF520 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 9 5 x 9 5 mils SCHEMATIC DIAGRAM

MPF 39VF512

Abstract: sst mpf 39vf512 39SF512 39SF010 sst mpf 39vf040 28sf040a 39VF010 39VF512 f0114 39vf020
Contextual Info: Die Sales Specifications INTRODUCTION TO UNENCAPSULATED DIE This document provides the user with guidelines for processing, testing, and resolving applications issues associated with purchasing unencapsulated SST flash EEPROM die. Product electrical specifications, functional descriptions, and bonding diagrams are not included. This information is available in the appropriate