DIEMAT Search Results

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: TGS2355-SM 0.5-6 GHz 100 Watt GaN Switch Applications • • • • • • Commercial and Military Radar Communications Electronic Warfare Test Instruments General Purpose High Power Switching Product Features • • • • • • • • • Functional Block Diagram

DM6030HK

Abstract: MAAP-000077-SMB004 AN3016 DM4030LD MAAP-000077-PED000 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAPGM0077-DIE
Contextual Info: Amplifier, Power, 13W 0.7-2.5 GHz MAAP-000077-PED000 Rev — Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

Contextual Info: SMJ320C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS007A - JUNE 1996 - REVISED JUNE 1997 Processed to MIL-PRF-38535 Fast Instruction Cycle Time of 30 ns, 40 ns, and 50 ns Source-Code Compatible With all ’C1x and ’C2x Devices RAM-Based Operation - 9K-Words x 16-Bit Dual-Access On-Chip

Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

tanaka gold wire

Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Contextual Info: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: MAAP-000078-PED000 Amplifier, Power, 12W 2.0—6.0 GHz M/A-COM Products Preliminary: Rev B Features ♦ 12 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation

x-band power amplifier

Abstract: DM6030HK
Contextual Info: Amplifier, Power, 16W 1.3-2.5 GHz MAAP-000076-PED000 Rev A Preliminary Datasheet Features ♦ 16 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

DM6030HK

Contextual Info: MAAP-000074-PED000 Amplifier, Power, 8W 2.0-8.0 GHz Rev A Preliminary Datasheet Features ♦ 8 Watt Saturated Output Power Level ♦ Eutectically mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

P1016

Abstract: DM6030HK XP1016 XP1016-BD XP1016-BD-000V XP1016-BD-EV1 AuSn eutectic
Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD February 2010 - Rev 15-Feb-10 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1016-BD December 2009 - Rev 04-Dec-09 Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

96708

Abstract: 2128-3 RAM SMJ320C50 SMJ320C50KGD TMS320C50BS diemat 41266 ram
Contextual Info: SMJ320C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS007A – JUNE 1996 – REVISED JUNE 1997 D D D D D D D Processed to MIL-PRF-38535 Fast Instruction Cycle Time of 30 ns, 40 ns, and 50 ns Source-Code Compatible With all ’C1x and ’C2x Devices RAM-Based Operation

Contextual Info: XP1026-BD Power Amplifier 27.0-32.0 GHz Rev. V1 Features Chip Device Layout •     Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power

Contextual Info: XP1027-BD Power Amplifier 27 - 31 GHz Rev. V2 Features 2 5 4 3 V D3 VG3 VD2 V G2 VD1 Functional Diagram Ka-Band 4 W Power Amplifier Balanced Design, Good Input / Output Match 25 dB Small Signal Gain 35 dBm Saturated Output Power 43 dBm Output Third Order Intercept OIP3

XP1057-BD

Abstract: DM6030HK XP1057
Contextual Info: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept

XP1032-BD

Abstract: XP1032-BD-EV1 DM6030HK
Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD January 2010 - Rev 29-Jan-10 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

Contextual Info: Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev A Preliminary Datasheet Features ♦ 18 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 8-10V Operation

Contextual Info: MAAP-000076-PED000 Amplifier, Power, 6W 1.3—2.5 GHz M/A-COM Products Preliminary: Rev B Features ♦ 16 Watt Saturated Output Power Level ♦ Eutectically Mounted to Heat Spreader ♦ Next level integration is a Silver Epoxy-Based Process ♦ Variable Drain Voltage 6-10V Operation

Contextual Info: 34.0-36.0 GHz GaAs MMIC Power Amplifier P1055-BD March 2009 - Rev 03-Mar-09 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

14522

Abstract: DM6030HK
Contextual Info: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

Contextual Info: TGA4915-CP 7 W Ka Band Packaged Power Amplifier Key Features and Performance • • • • • • • Frequency Range: 26 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss 0.25µm pHEMT Technology Bias Conditions: Vd = 6V, Idq = 4.2 A

Contextual Info: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD March 2009 - Rev 04-Mar-09 Features Chip Device Layout 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing

TGA4915-EPU-CP

Abstract: ka band power mmic
Contextual Info: Advance Product Information June 30, 2004 7 W Ka Band Packaged Power Amplifier TGA4915-EPU-CP Key Features and Performance • • • • • • • Frequency Range: 26 - 31 GHz 38 dBm Typical Psat @ Pin =21 dBm 22 dB Nominal Gain 15 dB Typical Return Loss

96708

Abstract: SMJ320C50 SMJ320C50KGD 2128-3 RAM
Contextual Info: SMJ320C50KGD DIGITAL SIGNAL PROCESSOR KNOWN GOOD DIE SGZS007 – JUNE 1996 D D D D D D D D Processed to MIL-PRF-38535 Fast Instruction Cycle Time of 30 ns, 40 ns, and 50 ns Source-Code Compatible With all ’C1x and ’C2x Devices RAM-Based Operation – 9K x 16-Bit Dual-Access On-Chip