DIM100 Search Results

Contextual Info: Quick Start Guide SPRUGP7 – June 2009 TMS320C28343 Experimenter’s Kit Overview The C28343 Experimenter’s Kit is a quick, easy, and low-cost way to evaluate the TMS320C2834x family of devices. It consists of a DIM100 docking station and a C28343 DIM100 controlCARD. The docking

DIM100PHM33-F000

Contextual Info: DIM100PHM33-F000 DIM100PHM33-F000 Half Bridge IGBT Module DS5764-1.2 June 2008 LN26119 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■

DIM100PHM33-F000

Abstract: DIM100PHM33-F 100a diode bridge DIM100PHM33
Contextual Info: DIM100PHM33-F000 Half Bridge IGBT Module Replaces DS5764-1.2 DS5764-2 October 2011 LN28815 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

DIM1000XSM33-TS001

Contextual Info: DIM1000XSM33-TS001 Single Switch IGBT Module DS6126-1 October 2013 LN31016 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

Contextual Info: DIM100CHS17-A000 DIM100CHS17-A000 Half Bridge IGBT Module PDS5709-1.5 January 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

Contextual Info: DIM100CHS17-A000 DIM100CHS17-A000 Half Bridge IGBT Module Replaces February 2004 version, issue PDS5709-1.6 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate PDS5709-2.1 June 2004 KEY PARAMETERS VCES typ

Contextual Info: DIM100CHS17-E000 DIM100CHS17-E000 Half Bridge IGBT Module PDS5728-1.0 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM100CHS17-A000 DIM100CHS17-A000 Half Bridge IGBT Module PDS5709-1.6 February 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

Contextual Info: DIM1000ECM33-TL000 IGBT Chopper Module DS6105-1 June 2013 LN30633 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

Contextual Info: DIM1000NSM33-TL000 Single Switch IGBT Module DS6109-1 June 2013 LN30637 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT

Contextual Info: DIM100CHS12-A000 DIM100CHS12-A000 Half Bridge IGBT Module Replace February 2004 version, issue DS5734-1.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5734-2.1 June 2004 KEY PARAMETERS VCES typ

half bridge circuit diagram

Contextual Info: DIM100CHS12-H000 DIM100CHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5632-1.3 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS VCES

Contextual Info: DIM100CHS12-E000 DIM100CHS12-E000 Half Bridge IGBT Module PDS5682-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

DIM100WHS12-A000

Abstract: dynex
Contextual Info: DIM100WHS12-A000 DIM100WHS12-A000 Half Bridge IGBT Module Replaces February 2004 version, issue DS5735-1.0 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate DS5735-2.0 May 2004 KEY PARAMETERS VCES typ

Contextual Info: DIM1000ECM33-TS000 IGBT Chopper Module DS6091-1 April 2013 LN30401 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  Isolated AlSiC Base with AlN Substrates

bi-directional switches IGBT

Abstract: DIM100PHM33-F000
Contextual Info: DIM100PHM33-F000 DIM100PHM33-F000 Half Bridge IGBT Module PDS5764-1.1 April 2004 FEATURES • Soft Punch Through Silicon ■ 10µs Short Circuit Withstand ■ Isolated MMC Base with AlN Substrates ■ High Thermal Cycling Capability APPLICATIONS ■ High Reliability Inverters

87630-1001

Abstract: DIM-100 DIMM100 TMDSDIM100CON5PK DIM100 DIMM-100 876-3010
Contextual Info: DIM100 Connector 5 Pack - DIM100CON5PK - TI Tool Folder Samples & Purchase Cart | Contact Us | TI Worldwide: United States | my.TI Login All Searches Search by Keyword GO Search by Part Number TI Home > Semiconductors > Microcontrollers > DIM100 Connector 5 Pack

DIM1000ECM33-TS000

Abstract: DIM1000ECM33-TS
Contextual Info: DIM1000ECM33-TS000 IGBT Chopper Module Replaces DS6091-2 DS6091-3 September 2014 LN31962 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)

DIM100

Abstract: C28346 ADS7865 SPRUG01 DIM-100 C2000 DIM168 C2834
Contextual Info: Quick Start Guide SPRUG01 – March 2009 Delfino C28343 controlCARD ™ Overview The Delfino C28343 controlCARD is based on the standard DIM100 controlCARD form factor and is compatible with existing C2000 controlCARD based application development boards. It is based around

Contextual Info: DIM100WHS17-A000 DIM100WHS17-A000 Half Bridge IGBT Module PDS5715-1.0 Febuary 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Base Plate KEY PARAMETERS VCES typ VCE(sat) * (max) IC (max) IC(PK) 1700V 2.7V

Contextual Info: DIM100CHS12-A000 DIM100CHS12-A000 Half Bridge IGBT Module DS5734-1.0 Fbruary 2004 FEATURES • 10µs Short Circuit Withstand ■ Non Punch Through Silicon ■ Isolated Copper Baseplate KEY PARAMETERS VCES typ VCE(sat)* (max) IC (max) IC(PK) 1200V 2.2V 100A

Contextual Info: DIM100WHS12-E000 DIM100WHS12-E000 Half Bridge IGBT Module PDS5710-1.1 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)

Contextual Info: DIM100

copper heatsink

Abstract: LM 949
Contextual Info: DIM100WHS12-H000 DIM100WHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5650-1.0 August 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate APPLICATIONS ■