DIODE 1-35 L V6 Search Results

24N60AU

Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Contextual Info: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V

d 1548

Abstract: FU-695PDF-V620M06 FU-695PDF-V620M10 FU-695PDF-V620M14 FU-695PDF-V620M18 FU-695PDF-V620M22 FU-695PDF-V620M26 FU-695PDF-V620M30 FU-695PDF-V620M34
Contextual Info: TZ7-01-307A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-695PDF-V620Mxx • 8ch for 50GHz spacing, 350GHz range thermally wavelength tunable PRELIMINARY A B x Date 9.Oct.’01

V60100PW-M3/4W

Abstract: J-STD-002 diode package outline V60100PW
Contextual Info: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation

UPC1298V

Abstract: FU-672PDF-V620M03 FU-672PDF-V620M05 FU-672PDF-V620M06
Contextual Info: TZ7-01-304A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-672PDF-V620Mxx • 4ch for 50GHz spacing, 150GHz range thermally wavelength tunable A B x Date 5.Oct.’01 C D

150ghz

Abstract: FU-675PDF-V620M03 FU-675PDF-V620M04 FU-675PDF-V620M05 FU-675PDF-V620M06 FU-675PDF-V620M08 FU-675PDF-V620M09 FU-675PDF-V620M10
Contextual Info: TZ7-01-305A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-675PDF-V620Mxx • 4ch for 50GHz spacing, 150GHz range thermally wavelength tunable A B x Date 5.Oct.’01 C D

RTH1 THERMISTOR

Abstract: 156020 d 1548 FU-692PDF-V620M06 FU-692PDF-V620M10 FU-692PDF-V620M14 FU-692PDF-V620M18 FU-692PDF-V620M22 FU-692PDF-V620M26 FU-692PDF-V620M30
Contextual Info: TZ7-01-306A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-692PDF-V620Mxx • 8ch for 50GHz spacing, 350GHz range thermally wavelength tunable PRELIMINARY A B x Date 9.Oct.’01

Contextual Info: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: V60100PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation

0824D

Contextual Info: New Product V60100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.47 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation

Contextual Info: New Product V60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

V60100C

Abstract: J-STD-002
Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

Contextual Info: New Product V60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses • High efficiency operation

J-STD-002

Abstract: V60100C VB60100C
Contextual Info: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power

V60100C

Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

TLD 721

Abstract: optical fiber at 1.55um 153248 d 1548 TLD 521 FU-698PDF-V620MZ1 154552-1
Contextual Info: TZ7-02-399A 1/7 July 22, 2002 Approved Approved Charged M.Sato Specification of wavelength monitor integrated DFB-LD module Module type: FU-698PDF-V620Mxx • 16ch for 25GHz spacing thermally wavelength tunable PRELIMINARY A B x Date 25 Jul.’02 C D Approved

J-STD-002

Contextual Info: New Product V60120C, VB60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-263AB

V60100C

Abstract: J-STD-002 VB60100C
Contextual Info: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power

Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

V60100C

Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

V60100C

Contextual Info: New Product V60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation

FU-632SEA-V31M11

Abstract: FU-632SEA-V31M13 FU-632SEA-V31M15 FU-632SEA-V31M17 FU-632SEA-V31M19 FU-632SEA-V31M21 FU-632SEA-V31M23 FU-632SEA-V31M9 TZ7-02-621B ke 931 diode
Contextual Info: TZ7-02-621B 1/8 14 January,2003 APPROVED CHARGED K.Abe Specification of EAM/DFB-LD module for 2.5Gb/s, 6400ps/nm, and 12800 ps/nm WDM application Type No. FU-632SEA-V31Mxx FU-632SEA-V61Mxx FU-632SEA-W31Mxx FU-632SEA-W61Mxx ( XX :9~91) A B C D X Approved Date

Contextual Info: New Product V60120C, VB60120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-263AB

Contextual Info: New Product V60100C & VB60100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS TO-220AB TO-263AB • Low forward voltage drop, low power