DIODE 1N6045 Search Results

diode 1n6045

Contextual Info: Part: 1N6045 Series: 1N60 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current

1N6037A

Abstract: 1N6036A JESD22-A102 Diode LT 5230
Contextual Info: INCH-POUND MIL-PRF-19500/717 9 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV

1N6042

Abstract: 1N6069 1N6052A 1N6053A diode 1n60 1N6058A 1N6038 1N6049 1N6054 1N6055A
Contextual Info: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability

What is a TRANSZORB

Abstract: SCL20A 1N6302A 1.5KE 180A keytek* 424 generator SCM120A diode 1.5ke 13A 5643A 1N6042A 5kp28a, 15000W reco relay
Contextual Info: TransZorb PROVIDING PROTECTION FOR • Telecommunications • Military • Computer • Industrial • Test & Instrumentation • Medical • Automotive GENERAL SEMICONDUCTOR INDUSTRIES, INC. A TransZorb® is a class o f diode, tw o term inal, that is designed

Contextual Info: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Low zener impedance • 100% surge tested

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 23 February 2012. INCH-POUND MIL-PRF-19500/507F 23 November 2011 SUPERSEDING MIL-PRF-19500/507E 7 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

mil-prf-19500/MIL-PRF-19500/478

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 December 1999. INCH-POUND MIL-PRF-19500/507C 12 September 1999 SUPERSEDING MIL-S-19500/507B 9 December 1992 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

1N6059

Abstract: 1N6055A JANTX 1N6036A 1N6037A 1N6038A 1N6039A 1N6072A VQE 21 d 452a
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2007. INCH-POUND MIL-PRF-19500/507E 7 August 2007 SUPERSEDING MIL-PRF-19500/507D 8 August 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Contextual Info: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets

1N6066 thomson

Abstract: lpp 68 g1 don connex 6064A 1N6036
Contextual Info: S G S —THOMSON S'ìC 59C ^ T H O M S O 02625 D 1I 7^ 237 GGG2b25 D 7 > //-£3 ’ N - C S F 1 1 M 6 0 3 6 ,A — DIVISION SEMICONDUCTEURS ► 1 IM 6 0 7 2 ,A BIDIRECTIONAL TR A N S IE N T V O L T A G E S U P P R E S S O R S DIODES DE PROTECTION BIDIRECTIONNELLES

SMD 1N60

Abstract: SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS
Contextual Info: rz j S G S -T H O M S O N ^ 7£ 1N 5634A /1N 5665A 1N 6040A /1N 6072A TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 11V to 200 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .

Contextual Info: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.