DIODE 20V 2A Search Results

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A

Contextual Info: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A

Contextual Info: OBSOLETE - PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A

Contextual Info: OBSOLETE - PLEASE USE ZXTPS718MC ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A

A1 dual diode

Abstract: Schottky Diode 40V 5A dual MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
Contextual Info: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

Contextual Info: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

A1 dual diode

Abstract: MLP832 ZX3CD2S1M832 ZX3CD2S1M832TA ZX3CD2S1M832TC
Contextual Info: ZX3CD2S1M832 MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-20V; RSAT = 64m ; C = -3.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

A1 dual diode

Abstract: ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC
Contextual Info: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

A1 dual diode

Abstract: ZX3CDBS1M832 MLP832 ZX3CDBS1M832TA ZX3CDBS1M832TC
Contextual Info: ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A VR = 40V; VF = 500mV @1A ; IC=1A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP this combination dual

Contextual Info: RUR020N02 Nch 20V 2A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: RUF020N02 Datasheet Nch 20V 2.0A Power MOSFET lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.8W lFeatures (3) TUMT3 (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3).

Contextual Info: RUR020N02 Datasheet Nch 20V 2A Power MOSFET lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

Contextual Info: RUR020N02 Nch 20V 2A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 1W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).

transistor A2

Abstract: Marking Y1 SOT26 DFN3020 diodes transistor marking k2 dual
Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A

Contextual Info: RUF020N02 Nch 20V 2.0A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.8W lFeatures (3) TUMT3 (1) (2) lInner circuit 1) Low on - resistance. 2) Built-in G-S Protection Diode. (1) Gate (2) Source (3) Drain 3) Small Surface Mount Package (TUMT3).

transistor A2

Abstract: diodes transistor marking k2 dual DFN3020B-8
Contextual Info: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A

Contextual Info: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION Features and Benefits Mechanical Data PNP Transistor • BVCEO > -20V • IC = -3.5A Continuous Collector Current • Low Saturation Voltage -220mV max @ -1A

Contextual Info: RW1C020UN Datasheet Nch 20V 2A Power MOSFET lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.7W lFeatures (6) (5) WEMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (WEMT6).

Contextual Info: RW1C020UN Nch 20V 2A Power MOSFET Datasheet lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.7W lFeatures (6) (5) WEMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) 1.5V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (WEMT6).

DFN3020B-8

Abstract: ZXTPS718MCTA
Contextual Info: A Product Line of Diodes Incorporated ZXTPS718MC 20V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = -20V • RSAT = 64mΩ

DFN3020B-8

Abstract: ZXTN DS3193
Contextual Info: A Product Line of Diodes Incorporated ZXTNS618MC 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL Features Mechanical Data • • • • • • • • • • • • • • • PNP Transistor • VCEO = 20V • RSAT = 47mΩ

Contextual Info: WILLAS FM120-M+ 66* THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product LESHAN RADIO COMPANY, LTD. Package outline Features Switching diode Switching diode • SOD - 723 SOD-123H .013 0.32 .009(0.25)

Contextual Info: International Iö R Rectifier PD - 9.1648A IRF7524D1 PRELIMINARY FETKY M OSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint V dss = -20V R d s o h

a1952

Contextual Info: Ordering number : ENA1952A MCH3476 N-Channel Power MOSFET http://onsemi.com 20V, 2A, 125mΩ, Single MCPH3 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage