DIODE 2124 Search Results

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

5sdd0135z0400

Abstract: 0135Z0400
Contextual Info: VRRM = 400 V IFAVM = 13526 A IFRMS = 21247 A IFSM = 85000 A VF0 = 0.758 V rF = 0.021 mΩ Housingless Welding Diode 5SDD 0135Z0400 PRELIMINARY Doc. No. 5SYA1179-00 March 07 • • • • High forward current capability Low forward and reverse recovery losses

0135Z0400

Contextual Info: VRRM = 400 V IFAVM = 13526 A IFRMS = 21247 A IFSM = 85000 A VF0 = 0.758 V rF = 0.021 mΩ Housingless Welding Diode 5SDD 0135Z0400 PRELIMINARY Doc. No. 5SYA1179-00 July 06 • High forward current capability • Low forward and reverse recovery losses • High current application up to 2000 Hz

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

MMD0840

Abstract: fs r6a CIRCUIT DIAGRAM IN5711 vishay LIMITING INRUSH CURRENT mosfet LTC6910-1 coiltronics ctx02-13664 MMD-0840 CTX02-13664 LTC3439 mmd series mosfets
Contextual Info: LINEAR TECHNOLOGY VOLUME XII NUMBER 4 DECEMBER 2002 COVER ARTICLE Ideal Diode Controller Eliminates Energy Wasting Diodes in Power OR-ing Applications . 1 David Laude Issue Highlights . 2 LTC in the News . 2

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

thyristor 406

Abstract: 4024 N c 3198 transistor T1059N T1589N T2159N T308N T458N T709N KD206V
Contextual Info: W3C-Schaltung Anschlußspannung ~ ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D Thyristor T [°C]

A 3198

Abstract: c 3198 T1059N T1589N T2159N T308N T458N T709N KD206V THYRISTOR 1724
Contextual Info: W3C-Schaltung Anschlußspannung ~ ~ ~ ~ ~ ~ 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 2200 V Kühlblöcke für Wasserkühlung Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D Thyristor T [°C]

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

3sm6

Abstract: DS-049 35M6 3SM4 1N5550 1N5552 1N5553 Diode 1N5554 35M8 3SM8
Contextual Info: SEMTECH CORP 5flE » • B M W 1N5550 1N5551 1N5552 1N5553 1N5554 STANDARD RECOVERY AXIAL LEADED HERMETICALLY SEALED STANDARD RECOVERY RECTIFIER DIODE 3SM2 3SM4 3SM6 3SM8 3SM0 • Vr = 200 - 1000V » If = 5.0A • trr = 2jaS • Vf = 1.0V unless otherw ise specified

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

7803 3V 1A positive voltage regulator

Abstract: 20 qfn 3x3 datasheet for 4x4 keyboard F QFN 3X3 LTC3452 LTC3524 QFN-56 5x9 50w LED driver sw 2604 ic ic sw 2604
Contextual Info: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/24/08 3:43:50 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.

7803 3V 1A positive voltage regulator

Abstract: 4x5 led display 12V, 350mA LED driver LT3476 LTC3454 sw 2604 ic datasheet for 4x4 keyboard 03 07 qfn 3x3 F QFN 3X3 LT3755
Contextual Info: VOL 2 Power Management for LEDs High Performance Analog ICs 04109 CS3_LIN_LED_FA_10–7–08.r2.indd 2 10/21/08 12:52:45 PM LEDs and LED Driver Technology LEDs A light-emitting diode LED is a semiconductor device that emits narrow-spectrum incoherent light when forward-biased.

500NT

Abstract: DIODE 2124
Contextual Info: i F SA\YO D S462 N0.2124A Silicon Epitaxial Planar Type J High-Voltage Switching Diode jpf A b s o lu te M axim um R a tin g s a t T a = 25°C Peak Reverse Voltage Reverse Voltage Vr Peak Forward Current Average Rectified C u rrent Iq Surge Forward C urrent

Contextual Info: Ordering number : ENN6666 5LP01S P-Channel Silicon MOSFET 5LP01S Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-Speed Switching. 2.5V drive. unit : mm 2124 [5LP01S] 0.4 • 0.3 0.75 0.6 3 0.8 1.6 0 to 0.1

Contextual Info: Ordering number:ENN6561 N-Channel Silicon MOSFET 5LN01S Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2124 0.4 [5LN01S] 0.3 0.75 0.6 3 1 2 0.5 0.5 1.6 0.4 0.2 0.1

BERULUB FR 16

Abstract: ixys vuo 52-16 ups PURE SINE WAVE schematic diagram Vienna Rectifier TL 82036 BERULUB FR 43 UC3858 schema inverter welding veridul BERULUB FR 16 B
Contextual Info: Application Notes & Technical Information Volume 2 Volume 1 Contents Title Page Standard IGBT "G" Series M1 - 2 What is a HiPerFET Power Mosfet? M1 - 3 New 1600 V BIMOSFET Transistors Open up New Appl. M1 - 5 Comparative Performance of BIMOSFET in FLY Back Converter Circuits

monochrome tv receiver

Abstract: diode c750 diodo 76 R diodo 72 by 228 v ESM thyristor diodo esm ESM diode esm 200 ESM188
Contextual Info: CB 72 T O 66 ( C EÏ 7 2 } Fast turn off devices for T V receivers C o m p o s a n t s ra p id e s p o u r ré ce p te u rs té lévisio n T H Y R IS T O R S S I L IC O N C O N T R O L L E D R E C T IF I E R S E S M 188 M -450 Déviation horizontale, monochrome, thyris­

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

circuit diagram of GSM based home automation system

Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB
Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by

DIODE A34

Contextual Info: ECOsine Passive January 2015 ECOsine® Passive Harmonic Mitigation Portfolio 1 ECOsine® Passive Schaffner Group The Schaffner Group is the international leader in development and production of solutions which ensure efficient and reliable operation of electronic systems. The Group's broad range of product and services

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

sot-89 BV SMD TRANSISTOR MARKING CODE

Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ