DIODE 3039 Search Results

DL-3039-011

Contextual Info: Ordering number : EN5865 Red Laser Diode D L-3039-011 Index Guided AIGalnP Laser Diode Overview Package Dimensions DL-3039-011 is 670 nm Typ. index guided AIGalnP laser diode with low threshold current and high operating temperature. The low threshold current and short wavelength are achieved by use of a

Contextual Info: Ordering number : EN5865 DL-3039-011 Red Laser Diode DL-3039-011 Index Guided AlGaInP Laser Diode Overview Package Dimensions DL-3039-011 is 670 nm Typ. index guided AlGaInP laser diode with low threshold current and high operating temperature. The low threshold current and short wavelength are achieved by use of a

diode 5082-3039

Contextual Info: 5082-3039 SILICON PIN DIODE PACKAGE STYLE 01 DESCRIPTION: TheASI 5082-3039 is a Silicon PIN Diode Designed for General Purpose Attenuator and Switching Applications from 100 MHz to 3 GHz. MAXIMUM RATINGS IF 100 mA VR 150 V PDISS 250 mW @ TA = 25 °C TJ -65 °C to +200 °C

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

EN4552

Abstract: 2SA1898 FP106
Contextual Info: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.

2SA1898

Abstract: FP106 MARKING 106
Contextual Info: Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.

Contextual Info: Ordering number : EN 4552 SANYO No.4552 ¡I_ FP106 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC-DC Converter Applications F eatu res • Complex type with a PNP transistor and a Schottky barier diode in one package, facilitating highdensity mounting.

zener diode 1N PH 48

Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Contextual Info: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:

Contextual Info: RED LASER DIODE DL-3039-011 Ver.3 Apr. 1999 Features Package • Short wavelength : 670 nm Typ. • Low threshold current : Ith = 30 mA (Typ.) • High operating temperature : 5 mW at 60°C Tolerance : ± 0.2 (Unit : mm) ø9.0 - 0.03 ø5.35 ø4.75± 0.15

Contextual Info: 5082-3039 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 150 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.1.25 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.25pò Carrier Lifetime (S)100n @I(F) (test) (A)50m @I(R) (A) (Test Condition)250m

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

3041B

Abstract: zener diode JEDEC 1N 3031B zener diode 1n IN3043B
Contextual Info: 1N 3016B thru 1N 3 0 5 1 B / Micmemi Corp. P The diode experts / SANTA ANA, CA SCOTTSDALE, A 2 / F o r m o re in fo rm a tio n call: ' 6 0 2 941-6300 FEATURES SILICON 1 WATT ZENER DIODES • Z E N E R V O LTA G E RANGE: 6.8V TO 200V • 1N3016B THROUGH 1N3051B HAVE JAN, JA N T X , and JA N T X V Q U A LIFICA TIO N S

IN3027B

Abstract: IN3048B IN3034B diode 1N3048b ZENER 1 WATT 6.8V in3020b in3022b in3033b 1N3020B 1N3016B
Contextual Info: 1N 3016B thru 1 N 3 0 5 1B Microlsemi Corp. ' The diode experts SA NTA A NA, CA SCOTTSDA J.E, A Z / F o r m ore in fo rm atio n call: 602 9 4 I-6 3 0 0 FEATURES • ZENER VO LTA G E RANGE: 6.8 V TO 200V • 1N3016B TH RO UG H 1N3051B H A VE JA N , JA N T X , and J A N T X V Q U A L IF IC A T IO N S

diode 5082-3077

Abstract: IN5719 1N5767 5082-3039 diode 5082-3080 1N5 diode 1N5719 F 5082 1N5712 RS-296-D
Contextual Info: PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications

1N5767

Abstract: DIODE T25 in5719 1nxxxx diode 1N5712 1N5719 RS-296-D digital phase shifters 1N5 diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications These general purpose switch­ing diodes are intended for low power switching applications such as RF ­duplexers,

in5719

Abstract: DIODE T25 5082-XXXX 5082-3001 1N5719 diode 5082-3077 diode 5082- 3039 5082-3080 1N57xx 1Nxx
Contextual Info: Agilent 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Features • Low Harmonic Distortion • Large Dynamic Range Description/Applications These general purpose switching

1N5767

Abstract: IN5719 1nxxxx diode 5082-XXXX
Contextual Info: 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 PIN Diodes for RF Switching and Attenuating Data Sheet Description/Applications Features These general purpose switching diodes are intended for low power switching applications such as RF

IN5767

Abstract: HP 5082-3081 HPND-4165 EN 4165 5082-3042 1N5719 1N5767 HPND-4166 IN5719 RS-296-D
Contextual Info: PIN DIODES FOR RF SWITCHING AND ATTENUATING 1N5719 IN5767 5082-3001/02 5082-3039 5082-3042/43 5082-3077 5082-3080 5082-3081 5082-3168/88 5082-3379 HPNO-4165/66 Features LOW HARMONIC DISTORTION LARGE DYNAMIC RANGE LOW SERIES RESISTANCE LOW CAPACITANCE LOW TEMPERATURE COEFFICIENT

1N5767

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.SA PIN Diodes for RF Switching and Attenuating Technical Data 1N5719, 1N5767, 5082-3001, 5082-3039, 5082-3077, 5082-3080/81, 5082-3188, 5082-3379 Features

AV 2075 ANTENNA

Abstract: TXV-3039 tt 2074
Contextual Info: HEWLETT-PACKARDn C N PN TS Sfi DE I 4 4 4 7 S A 4 O D O S ^ 11] 4 |~~ 4 4 4 75 84 H E WL ETT-PACKARD» CMPNTS m HIGH RELIABILITY PIN DIODES FOR RF SWITCHING AND ATTENUATING HEW LETT PACKARD DJ-bl'lS 58C 02949 Generic 5082-3001, -3002, -3039 and -3077 TX-3001/2

bbc ds diodes DS 1,8

Abstract: BBC DSA 0,9 14 A BBC DSA 0.9 bbc ds diodes bbc ds diodes DS 1,8 04 A diode bbc ds 1.8 bbc ds 17 bbc dsd 17 BBC DSA 42 bbc ds diodes DS 22
Contextual Info: BBC Technical Data Silicon-Semiconductor ' Components BR0” Printed order nr. Rectifier-Diodes D G H s 30392 E Diodes are e le ctric devices which con du ct current in one directio n i.e. offer a low resistance, w hile blocking i.e. offering a high resistance, in the reverse direction.