DIODE 360 Search Results
DIODE 360 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIODE 360 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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US1239Contextual Info: SKiiP 1202 GB 061 - 360 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 2500 -25.+85 IGBT and Inverse Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms |
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IGBT11) Rthjs10) US1239 | |
IGBT K 40 T 1202
Abstract: IGBT 1200A diode current 1200A M2 1200 DIODE semikron skiip 20 US1239
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IGBT11) IGBT K 40 T 1202 IGBT 1200A diode current 1200A M2 1200 DIODE semikron skiip 20 US1239 | |
Contextual Info: 5SDF 04T4504 5SDF 04T4504 Old part no. DM 827C-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500 |
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04T4504 827C-360-45 04T4504 04T4004 1768/138a, DM/277/08 Jul-10 | |
DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
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Contextual Info: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500 |
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04D4504 04D4504 04D4004 1768/138a, DM/219/06 Jul-10 | |
biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
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658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 | |
Contextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for |
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FFPF60B150DS O-220F FFPF60B150DSTU O-220F | |
FFPF60B150DSContextual Info: FFPF60B150DS FFPF60B150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-220F Applications 1 2 3 Damper • Modulation + Damper diode designed for |
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FFPF60B150DS O-220F FFPF60B150DS | |
Contextual Info: FFAF60A150DS FFAF60A150DS Features • High voltage and high reliability • High speed switching Modulation diode / Damper diode • Low conduction loss Modulation diode / Damper diode TO-3PF Applications 1 2 3 Modulation Damper • Modulation + Damper diode designed for |
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FFAF60A150DS | |
305-0065-780
Abstract: TOLD9225M TOLD9442M 35-3600 laser diode lifetime lens laser diode DL3038-033 DL3147-261 ML1013R AT/305-0065-780
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635nm 785nm DL3038-033 DL4038-031 OLD9442M OLD9231M OLD9225M ML44126N 01JAN01 305-0065-780 TOLD9225M TOLD9442M 35-3600 laser diode lifetime lens laser diode DL3038-033 DL3147-261 ML1013R AT/305-0065-780 | |
marking SAContextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1) |
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ENN7029 SBS806M SBS806M SBS006. SBS806M] marking SA | |
Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1) |
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ENN7029 SBS806M SBS806M] SBS806M SBS006. | |
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance |
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3600E170300 CH-5600 | |
4DSMContextual Info: Data Sheet, Doc. No. 5SYA 1416-00 04-2011 5SLA 3600E170300 ABB HiPakTM, Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance |
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3600E170300 CH-5600 4DSM | |
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5SLA 3600E170300
Abstract: 5SYA2039 3600E170300
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3600E170300 C9113 CH-5600 5SLA 3600E170300 5SYA2039 | |
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance |
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3600E170300 CH-5600 | |
C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
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EN935B SVC333 SVC333 SVC333] C10V C25V IN 4004 diode diode IN 4004 3662 diode | |
semikron skiip 342
Abstract: igbt bridge switching power supply IGBT PROTECTION DIODE
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semikron skiip 232
Abstract: OF IGBT
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Diode Motorola 711 2N2905A
Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
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MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555 | |
6R1MBi100P
Abstract: 1600V 100a igbt
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6R1MBi100P-160 400A/75A 6R1MBi100P 1600V 100a igbt | |
Contextual Info: 6R1MBi100P-160 Diode Module Diode Module with Brake Diode:1600V / 100A, IGBT:1400A/75A Features • Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motor Drive · AC and DC Servo Drive Amplifier |
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6R1MBi100P-160 400A/75A | |
6R1MBI100P160
Abstract: 100A/IGBT 1600V 100a igbt
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6R1MBi100P-160 400A/75A 6R1MBI100P160 100A/IGBT 1600V 100a igbt | |
Contextual Info: LASER DIODE Laser diode L9278-14 TOSA type, 1310 nm FP Fabry-Perot laser diode Features Applications l Optical fiber communication l Gigabit ethernet l Fiber channel l 1310 nm FP (Fabry-Perot) laser diode l φ1.25 mm sleeve type TOSA (Transmitter Optical |
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L9278-14 SE-171 KLED1041E01 |