68w Transistor smd
Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W
|
Original
|
PDF
|
HG4100
HG4516
HG4507
HG4078B
SGR46G
125VAC
60VDC
150VDC
24VDC
68w Transistor smd
bbc 127 324 DIODE
TRANSISTOR SMD 13W
smd transistor yb
lamp indicator 115vac 400hz
18w smd transistor
RD 6BL
relay 12v 1c/o
kd smd transistor
SGR642H
|
2EDL23N06
Abstract: trimble R8
Text: Eice DR IV ER High voltage gate driver IC BDTIC E valu atio n B oar d Application Note EV AL -2 E DL2 3N 06 PJ EV AL -2 E DL2 3N 06 PJ Applic atio n N ote Rev. 1.0 2014-04-11 Infin eon T echnol ogi es A G www.BDTIC.com/infineon BDTIC Edition 2014-04-11
|
Original
|
PDF
|
R-0603
R1206
R-0805
0R02/1W
T-NPN-BC848A
2EDL23N06PJ
2EDL23N06
trimble R8
|
zener smd marking 2x
Abstract: 3H DIODE smd smd diode marking 2J smd 27 3e diode sod323 diode marking code 2E 1Z 116 MM3Z10 MM3Z11 MM3Z12 MM3Z13
Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic
|
Original
|
PDF
|
MM3Z120
OD-323
OD-323
zener smd marking 2x
3H DIODE smd
smd diode marking 2J
smd 27 3e diode
sod323 diode marking code 2E
1Z 116
MM3Z10
MM3Z11
MM3Z12
MM3Z13
|
RHFAC16244K1
Abstract: FPC-48 rhfac16244k01v 54AC16244 5962-0421
Text: 54AC16244 16-BIT BUS BUFFER WITH 3-STATE OUTPUTS NON INVERTED • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 8 µA (MAX.) at TA = 25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.)
|
Original
|
PDF
|
54AC16244
16-BIT
RHFAC16244K1
FPC-48
rhfac16244k01v
54AC16244
5962-0421
|
smd zener diode code 2J
Abstract: Zener diode smd marking code 2A sod323 diode marking code 2E 3H DIODE smd smd diode marking 2J smd diode sod-323 marking code 2j ZENER 2V7 diode smd 3H DIODE SMD CODE MARKING 1e diode zener 8v2
Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic
|
Original
|
PDF
|
MM3Z120
OD-323
OD-323
smd zener diode code 2J
Zener diode smd marking code 2A
sod323 diode marking code 2E
3H DIODE smd
smd diode marking 2J
smd diode sod-323 marking code 2j
ZENER 2V7
diode smd 3H
DIODE SMD CODE MARKING 1e
diode zener 8v2
|
3H DIODE smd
Abstract: 1Z 116 marking code B0 SMD diode smd diode marking 2J zener smd marking 2x MM3Z10 MM3Z11 MM3Z12 MM3Z120 MM3Z13
Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES FEATURES PINNING • Total power dissipation : max. 300 mW PIN • Small plastic package suitable for DESCRIPTION 1 Cathode 2 Anode surface mounted design • Tolerance approximately ± 5% 1 2 DESCRIPTION Silicon planar zener diode in a small plastic
|
Original
|
PDF
|
MM3Z120
OD-323
OD-323
3H DIODE smd
1Z 116
marking code B0 SMD diode
smd diode marking 2J
zener smd marking 2x
MM3Z10
MM3Z11
MM3Z12
MM3Z120
MM3Z13
|
smd diode marking 2J
Abstract: 5V6 DIODE MM3Z ZENER DIODE Datasheet Zener diode smd marking 07 sod323 diode marking code 2E 1P SMD CODE MARKING 3H DIODE smd 6V2 Zener Diode DIODE ZENER smd marking 72 smd transistor marking 1p
Text: MM3Z2V0~MM3Z120 SILICON PLANAR ZENER DIODES PINNING FEATURES PIN DESCRIPTION ● Total power dissipation : max. 200 mW ● Small plastic package suitable for 1 Cathode surface mounted design 2 Anode ● Tolerance approximately + 5% 1 DESCRIPTION 2 Silicon planar zener diode in a small plastic
|
Original
|
PDF
|
MM3Z120
OD-323
OD-323
smd diode marking 2J
5V6 DIODE
MM3Z ZENER DIODE Datasheet
Zener diode smd marking 07
sod323 diode marking code 2E
1P SMD CODE MARKING
3H DIODE smd
6V2 Zener Diode
DIODE ZENER smd marking 72
smd transistor marking 1p
|
marking 3U 3T 3C diode
Abstract: marking 3U 3T 3C diode 3E 3G smd marking code 3Z smd diode marking codes 3t zener diode SMD marking code 27 4B marking 3U 3T diode smd zener diode code 4d NXP SMD ZENER DIODE MARKING CODE nxp Standard Marking 3w zener diode smd marking 4d
Text: SO D3 23F TDZxJ series Single Zener diodes Rev. 2 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description General-purpose Zener diodes in a SOD323F SC-90 very small and flat lead Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits
|
Original
|
PDF
|
OD323F
SC-90)
AEC-Q101
marking 3U 3T 3C diode
marking 3U 3T 3C diode 3E 3G
smd marking code 3Z
smd diode marking codes 3t
zener diode SMD marking code 27 4B
marking 3U 3T diode
smd zener diode code 4d
NXP SMD ZENER DIODE MARKING CODE
nxp Standard Marking 3w
zener diode smd marking 4d
|
ISL95831HRTZ
Abstract: ISL95831 95831 HRTZ isl95831 hrtz ISL95831IRTZ 95831 SMD MARKING CODE v3p isl9583 95831hrtz intersil 95831
Text: 3+1 Voltage Regulator for IMVP-7/VR12 CPUs ISL95831 Features Compliant with IMVP-7/VR12™, the ISL95831 provides a complete solution for microprocessor and graphic processor core power supply. It provides two Voltage Regulators VRs with three integrated gate drivers. The first VR can be
|
Original
|
PDF
|
IMVP-7/VR12TM
ISL95831
IMVP-7/VR12TM,
ISL95831
5m-1994.
FN7613
ISL95831HRTZ
95831 HRTZ
isl95831 hrtz
ISL95831IRTZ
95831
SMD MARKING CODE v3p
isl9583
95831hrtz
intersil 95831
|
panasonic smd book
Abstract: No abstract text available
Text: TO PIDSA HQ DELIVERY SPECIFICATIONS Orderer Customer Part Number Panasonic Global Part Number Vendor Issue Number AN48846B-NL 1203004 ORDERER (CUSTOMER) Confirmation of Security Control We confirm and certify that the products of these specifications shall not be supplied so as to be used for Military Purpose (defined herein
|
Original
|
PDF
|
AN48846B-NL
panasonic smd book
|
Untitled
Abstract: No abstract text available
Text: TO PIDSA HQ DELIVERY SPECIFICATIONS Orderer Customer Part Number Panasonic Global Part Number Vendor Issue Number AN48836B-NL 1203003 ORDERER (CUSTOMER) Confirmation of Security Control We confirm and certify that the products of these specifications shall not be supplied so as to be used for Military Purpose (defined herein
|
Original
|
PDF
|
AN48836B-NL
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB3N120E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N120E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1200 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
TB3N120E/D
MTB3N120E
In982.
418B-02
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TB3N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB3N100E T M O S E-FET™ Motorola Preferred Device High Energy Power FET D2 p a k for Surface Mount TMOS POWER FET 3.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
TB3N100E/D
MTB3N100E
MTB3N100E/D
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD3N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD3N25E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET
|
OCR Scan
|
PDF
|
MTD3N25E/D
TD3N25E
|
|
|
diode F 82 bp
Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip
|
OCR Scan
|
PDF
|
10DS1
EC10DS2
EC10DS4
EC10DS6
EC10Q
EC10QSO
10QS05
10QS06
EC10QS10
EC15Q
diode F 82 bp
DIODE BP
ZF8.2
ZF-8.2
Zf12
smd zener bp
ZF24
ZF30
Q05CT
|
Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICOND U> N L06IC bl E D m bSGllSE 0074fibb 7 ^ National Semiconductor 54AC/74AC175 • 54ACT/74ACT175 Quad D Flip-Flop General Description Features The ’A C /’ACT175 is a high-speed quad D flip-flop. The de vice is useful for general flip-flop requirements where clock
|
OCR Scan
|
PDF
|
L06IC)
0074fibb
54AC/74AC175
54ACT/74ACT175
ACT175
74ACT
54ACT
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 03 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
|
OCR Scan
|
PDF
|
MMDF3N03HD/D
|
airtronic capacitor
Abstract: TP5051 REGULATOR IC 7805 SMD smd transistor 1205 WS 7805 voltage regulator 7805 7805 smd regulator WS 7805 63 lp 7805
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The TP5051 is designed for 470 MHz cellular radio base stations in both analog and digital applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and
|
OCR Scan
|
PDF
|
TP5051
airtronic capacitor
REGULATOR IC 7805 SMD
smd transistor 1205
WS 7805
voltage regulator 7805
7805 smd regulator
WS 7805 63
lp 7805
|
smd diode UJ 64 A
Abstract: cz 017 v3
Text: □IX Y S Preliminary Data Sheet IXGH32N60BU1 IXGH32N60BU1S HiPerFAST IGBT with Diode tfi Test Conditions VCES Tj = 25 °C to 150°C 600 V V CGR Tj = 25 °C to 150°C; RGE = 1 M ii 600 V v GES Continuous ±20 V VGEM Transient ±30 V *C25 Tc = 25 °C ^C90
|
OCR Scan
|
PDF
|
IXGH32N60BU1
IXGH32N60BU1S
O-247
4bflb22b
smd diode UJ 64 A
cz 017 v3
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 02 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
|
OCR Scan
|
PDF
|
MMDF3N02HD/D
|
transistor smd Q 865
Abstract: SMD footprint design smd transistor 647 046 sot428 PHD3055E PHB3055E PHP3055E SC18 T0220AB T404
Text: Preliminary specification Philips Semiconductors TrenchMOS transistor SYMBOL FEATURES • • • • • PHP3055E, PHB3055E, PHD3055E QUICK REFERENCE DATA d ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance
|
OCR Scan
|
PDF
|
PHP3055E,
PHB3055E,
PHD3055E
PHP3055E
T0220AB)
PHB3055E
OT404
transistor smd Q 865
SMD footprint design
smd transistor 647
046 sot428
PHD3055E
SC18
T0220AB
T404
|
diode smd marking 5j
Abstract: MARKING CODE SMD IC 12B Diode smd 5j IOR 451
Text: PD 9.1436 International IGR Rectifier IRF7314 PRELIMINARY HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching V dss =
|
OCR Scan
|
PDF
|
IRF7314
diode smd marking 5j
MARKING CODE SMD IC 12B
Diode smd 5j
IOR 451
|
el415
Abstract: No abstract text available
Text: co « ÆM National Semiconductor 54AC/74AC138 • 54ACT/74ACT138 1-of-8 Decoder/Demultiplexer General Description Features The ’AC/'ACT138 is a high-speed 1-of-8 decoder/demulti plexer. This device is ideally suited for high-speed bipolar memory chip select address decoding. The multiple input
|
OCR Scan
|
PDF
|
54AC/74AC138
54ACT/74ACT138
ACT138
1-of-24
1-of-32
AC138:
ACT138:
el415
|
Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICOND LOGIC b S D 1 1 2 E D 0 7 H Ô G 0 flTb « N S C l blE D CO T-a~zi-5< co National Semiconductor 54AC/74AC138 • 54ACT/74ACT138 1-of-8 Decoder/Demultiplexer General Description Features The ’AC/'ACT138 is a high-speed 1-of-8 decoder/demulti
|
OCR Scan
|
PDF
|
54AC/74AC138
54ACT/74ACT138
ACT138
1-of-24
74ACT
54ACT
|
