DIODE 4 MARKING Search Results

chip Marking 3A3

Abstract: Diode BGX50A BGX50A VPS05178
Contextual Info: BGX50A Silicon Switching Diode Array 3
Bridge configuration
High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type BGX50A Marking U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 4=A2/C3 Package SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

marking SA

Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)

Contextual Info: Ordering number : ENN7029 SBS806M Schottky Barrier Diode SBS806M 30V, 0.5A Rectifier Applications Package Dimensions unit : mm 1310 • 2.1 3 2 1 0.65 5 2.0 4 1 : Anode Diode 1 2 : No Contact 3 : Anode (Diode 2) 4 : Cathode (Diode 2) 5 : Cathode (Diode 1)

VPS05178

Abstract: EHA07008
Contextual Info: BAR 65-07 Silicon RF Switching Diode 3
Low loss, low capacitance PIN-diode
Band switch for TV-tuners 4
Series diode for mobile communication transmit-receiver switch 2
Unconnected pair 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAR 65-07 M Pin Configuration

A1 SOT143

Abstract: VPS05178 BAW101 EHA07008
Contextual Info: BAW101 Silicon Switching Diode Array 3
Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings Parameter Symbol Diode reverse voltage

SOT JPs

Abstract: VPS05178 EHA07008
Contextual Info: BAW 101 Silicon Switching Diode Array 3 • Electrically insulated high-voltage medium-speed diodes 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAW 101 JPs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse voltage

VPS05178

Abstract: marking a4 SOT-143 a3 sot143 marking s8s 4C3 diode
Contextual Info: BAT 14-099R Silicon Crossover Ring Quad Schottky Diode 3 • Medium barrier diode for double balanced mixer, phase detectors and modulators 4 2 1 4 VPS05178 3 1 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

A4 marking diode

Abstract: VPS05178 sot-143 s6s diode marking a4 4C3 diode 15-099R
Contextual Info: BAT 15-099R Silicon Crossover Ring Quad Schottky Diode 3 • Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

diode marking 343

Abstract: sot-343 schottky diode
Contextual Info: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, Dual, Galvanically isolated Silicon Schottky diode , is designed for use in high speed surface mount switching applications. Marking Code is WSH4.

diode oar

Abstract: BAT54
Contextual Info: CD1L BAT54 SCHOTTKY BARRIER DIODE BAT54 single diode Marking PACKAGE OUTLINE DETAILS ALL DIM ENSIONS IN m m B A T 5 4 -4 L _3.0_ 2.8 1 = ANODE 2 = NC 3 = CATHODE 0 .1 4 0 .4 3 0 .3 8 Pin configuration 3 2.6 2 .4 _1.02 o.8<r 0.6 0 2.00 040" 1.80 ABSOLUTE MAXIMUM RATINGS

1S2473 DIODE equivalent

Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Contextual Info: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5

marking u1s SOT-143

Abstract: VPS05178 chip Marking 3A3
Contextual Info: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol

BAS40-07W

Contextual Info: BAS40-07W 3 Silicon Schottky Diode 4
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping 2
High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -

BAR80

Abstract: VSO05553
Contextual Info: BAR80 Silicon RF Switching Diode 3
Design for use in shunt configuration 4
High shunt signal isolation
Low shunt insertion loss 2 1 VSO05553 Type Marking BAR80 AAs Pin Configuration 1=C 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: Central CMASH-4 SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-923 CASE MARKING CODE: A TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor Corp. CMASH-4 is a high quality Schottky Diode designed for applications where very small size and operational efficiency are prime

Contextual Info: DSA15IM200UC preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 15 A VF = 0.78 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA15IM200UC Marking on Product: SFMAUI Backside: cathode 1 3 4 Features / Advantages:

4C3 diode

Abstract: Schottky Diode Marking C3 A4 marking diode VPS05178 BAT15-099R diode marking a4 diode MARKING A3
Contextual Info: BAT15-099R Silicon Crossover Ring Quad Schottky Diode 3
Low barrier diode for double balance mixers, phase detectors and modulators 4 2 4 1 3 1 VPS05178 2 EHA07012 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT15-099R

Contextual Info: SIEMENS Silicon Switching Diode Array BGX 50 A • Bridge configuration • High-speed switch diode chip Type Marking Ordering Code tape and reel BGX 50 A U1s Q62702-G38 Pin Configuration Package1) SOT-143 4 OU00007 Maximum Ratings per Diode Parameter Symbol

sot143 marking code u1s

Abstract: BFP181 BGX50A E6327
Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAT62

Abstract: VPS05178
Contextual Info: BAT62 Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz frequencies 4 2 1 VPS05178 1 4 2 3 EHA07020 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT62 62s Pin Configuration 1 = A1 2 = C2 3 = A2

BAT63-07W

Contextual Info: BAT63-07W Silicon Schottky Diode 3
Low barrier diode for detectors up to GHz 4 frequencies
For high-speed switching applications
Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

SRV05-4

Abstract: 076a
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD SRV05-4 Preliminary DIODE LOW CAPACITANCE TVS DIODE ARRAY „ DESCRIPTION The UTC SRV05-4 is a low capacitance TVS diode array, it uses UTC’s advanced technology to provide customers with low leakage current and low clamping voltage, etc.

6Y150AS

Abstract: 6Y150AS IXYS
Contextual Info: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak