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    DIODE 47-6 H1 Search Results

    DIODE 47-6 H1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CEZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ6V8
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CEZ5V6
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, ESC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ6V2
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ30V
    		Toshiba Electronic Devices & Storage Corporation Zener Diode, 30 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 47-6 H1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    50-12P1

    Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 B3 X18 L9 Pin arangement see outlines T16 O7 S18


    Original     		50-12P1 42T120 50-12P1 PDF

    50-12P1

    Abstract: S2485
    Contextual Info: VKI 50-12P1 IC25 = 49 A = 1200 V VCES VCE sat typ. = 3.1 V IGBT Modules in ECO-PAC 2 H-Bridge configuration Short Circuit SOA Capability Square RBSOA Preliminary data sheet F10 K10 A1 P18 K13 A4 D4 NTC H13 N9 Pin arangement see outlines T16 t O7 S18 Features


    Original     		50-12P1 42T120 50-12P1 S2485 PDF

    50-12P1

    Abstract: PSHI50-12 pshi50
    Contextual Info: ECO-PACTM 2 PSHI 50/12* IGBT Module IC25 = 49 A VCES = 1200 V VCE sat typ. = 3.1 V Preliminary Data Sheet F10 K10 K13 H13 A1 S18 N9 NTC P18 PSHI 50/12* *NTC optional IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES IC25 IC80 TC = 25°C


    Original     		42T120 50-12P1 50-12P1 PSHI50-12 pshi50 PDF

    ntc 50d 9

    Contextual Info: ECO-PACTM 2 PSHI 50D/12* IGBT Module IC25 = 49 A VCES = 1200 V VCE sat typ. = 3.1 V Preliminary Data Sheet Short Circuit SOA Capability Square RBSOA F10 A1 H13 S18 N9 IGBTs Symbol Conditions VCES TVJ = 25°C to 150°C NTC PSHI 50D/12* Maximum Ratings VGES


    Original     		50D/12* 42T120 50-12P1 ntc 50d 9 PDF

    H11NXM

    Abstract: H11N1M
    Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.


    Original     		H11N1-M H11N2-M H11N3-M H11NX-M P01101866 CR/0117 E90700, H11NXM H11N1M PDF

    17434

    Abstract: 343 "cross-reference" opto cross reference 4n35f 4n26f 94766 H11A1 "cross reference" 4N25M H11A4 4N35M
    Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)


    Original     		H11A1 H11A2 H11A3 H11A4 H11A5 E90700) 4N25V-M) 4N25-M /imaging/BITTING/cpl/20020725 10/FAIR/07252002/4N37-M 17434 343 "cross-reference" opto cross reference 4n35f 4n26f 94766 H11A1 "cross reference" 4N25M H11A4 4N35M PDF

    H11AV2

    Abstract: H11AV1A H11AV1M
    Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


    Original     		H11AV1 H11AV2 P01101866 CR/0117 E90700, H11AV1A H11AV1M PDF

    H11AV1

    Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
    Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


    Original     		H11AV1 H11AV2 H11AV2SR2V-M H11AV2SV-M P01101866 CR/0117 E90700, H11AV1A H11AV2A H11AV1M PDF

    4N37 "cross reference"

    Abstract: TD 6pin 4N35M
    Contextual Info: GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N25 4N37 4N26 H11A1 4N27 H11A2 WHITE PACKAGE -M SUFFIX 4N35 H11A4 4N36 H11A5 SCHEMATIC 6 1 4N28 H11A3 1 6 2 5 6 3 NC 4 1 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE 6 1 BLACK PACKAGE (NO -M SUFFIX)


    Original     		H11A1 H11A2 H11A3 H11A4 H11A5 4N25-M E90700) 4N25V-M) 4N37-M P01101866 4N37 "cross reference" TD 6pin 4N35M PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA PDF

    H10N

    Abstract: mosfet 650v H10N65
    Contextual Info: HI-SINCERITY Spec. No. : MOS200906 Issued Date : 2009.03.23 Revised Date :2009.08.05 Page No. : 1/6 MICROELECTRONICS CORP. H10N65 Series H10N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 650V,10A


    Original     		MOS200906 H10N65 O-220AB O-220FP) 183oC 217oC 260oC H10N mosfet 650v PDF

    H11BX522

    Abstract: 2500VPEAK 2MTC
    Contextual Info: 1 •»$ .*/> G E N E R A I ELECTRIC Photon Coupled Isolator H11BX522 Ga As Solid State Lamp & NPN Silicon Photo-Darlington Amplifier The G eneral E lectric H 11B X 522 is a gallium arsenide, infrared em itting diode coupled w ith a silicon photo-d arlin g to n am plifier


    OCR Scan     		H11BX522 H11BX522 33mW/Â 2500VPEAK 2MTC PDF

    A15420

    Abstract: 01-A15420 74ABT16 74ABT16240A dl 750 philips
    Contextual Info: INTEGRATED CIRCUITS 74ABT16240A 16-bit inverting buffer/driver 3-State Product data Replaces data sheet 74ABT/H16240A of 1998 Feb 25 Philips Semiconductors 2004 Feb 12 Philips Semiconductors Product data 16-bit inverting buffer/driver (3-State) FEATURES


    Original     		74ABT16240A 16-bit 74ABT/H16240A 64mA/-32mA 500mA 74ABT16240A A15420 01-A15420 74ABT16 dl 750 philips PDF

    h11n1 "cross-reference"

    Abstract: H11N1M
    Contextual Info: 6-PIN DIP HIGH SPEED LOGIC OPTOCOUPLERS H11N1-M H11N2-M H11N3-M PACKAGE SCHEMATIC ANODE 1 6 VCC 6 6 CATHODE 2 5 GND 1 1 3 4 VO 6 1 DESCRIPTION The H11NX-M series has a high speed integrated circuit detector optically coupled to an AlGaAs infrared emitting diode.


    Original     		H11N1-M H11N2-M H11N3-M H11NX-M mH11N3SR2M P01101866 CR/0117 E90700, h11n1 "cross-reference" H11N1M PDF

    fairchild 1011 opto

    Abstract: cj 6PIN H11L1SR2M H11L1M
    Contextual Info: 6-PIN DIP OPTOISOLATORS LOGIC OUTPUT H11L1M H11L2M H11L3M DESCRIPTION The H11LX series has a high speed integrated circuit detector optically coupled to a gallium-arsenide infrared emitting diode. The output incorporates a Schmitt trigger, which provides hysteresis for noise immunity and


    Original     		H11L1M H11LX H11L2M H11L3M H11L3-M P01101866 CR/0117 E90700, fairchild 1011 opto cj 6PIN H11L1SR2M PDF

    H11D3

    Abstract: RBE1
    Contextual Info: H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V


    Original     		H11D1/H11D2/H11D3 H11D1/H11D2, H11D3, E52744 H11D1/2/3 H11D1/2/3 H11D3 RBE1 PDF

    H11D3

    Abstract: DSA0011162
    Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original     		H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 17-August-01 H11D3 DSA0011162 PDF

    1N9778

    Abstract: 1N9628-1 1n9628 3195g 1N9920-1 1N9878 1N9818-1 3195gc 1n9620 1n9918
    Contextual Info: H1L 4ML J> H SHfc-LS DOGQISS 003432^ 2S1! • M I L S r , | The documentation and process conversion > | measures necessary to comply with this [ f revision shall be completed by 15 June1994 [ 1- ■- 1 ,-,


    OCR Scan     		GQ34S2R HXL-S-19500/117K HIL-S-19500/117J 1H962B-1 1N992B-1, 1N962BUR-1 1N992BUR-1, 1N962C-1 1N992C-1, 1N962CUR-1 1N9778 1N9628-1 1n9628 3195g 1N9920-1 1N9878 1N9818-1 3195gc 1n9620 1n9918 PDF

    H11D3

    Abstract: OPTO H11D1
    Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original     		H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 1-888-Infineon H11D1/2/3/4 H11D3 OPTO H11D1 PDF

    H11D1

    Abstract: H11D3 h11d3-d4 H11D12
    Contextual Info: H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original     		H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3/4 1-888-Infineon H11D1/2/3/4 H11D1 H11D3 h11d3-d4 H11D12 PDF

    pcb diagram welding inverter

    Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
    Contextual Info: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive


    Original     		MIXA20W1200MC 20091002a pcb diagram welding inverter CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM PDF

    H11D3

    Contextual Info: g y, , H11D1/H11D2/H11D3/H11D4 Phototransistor, 5.3 KV, TRIOS High BVCER Voltage Optocoupler FEATURES • CTR at IF=10 mA, BVCER=10 V: ≥20% • Good CTR Linearity with Forward Current • Low CTR Degradation • Very High Collector-Emitter Breakdown Voltage


    Original     		H11D1/H11D2/H11D3/H11D4 H11D1/H11D2, H11D3/H11D4, E52744 H11D1/2/3 H11D1/2/3/4 H11D3 PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF