DIODE 60V 6A Search Results

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

Contextual Info: SEMICONDUCTOR MBRD6U60CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K D L : IO=6A. ・Repetitive Peak Reverse Voltage B : VRRM=60V. H

Contextual Info: SEMICONDUCTOR MBRD6U60CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATURES A C ・Average Output Rectified Current K L D : IO=6A. ・Repetitive Peak Reverse Voltage B : VRRM=60V. H

Contextual Info: SBT150-06JS Ordering number : ENA1652 SANYO Semiconductors DATA SHEET SBT150-06JS Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features

Contextual Info: Ordering number : ENA1242B CPH6442 N-Channel Power MOSFET http://onsemi.com 60V, 6A, 43mΩ, Single CPH6 Features • • • Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage

Contextual Info: Ordering number : ENA1242B CPH6442 N-Channel Power MOSFET http://onsemi.com 60V, 6A, 43mΩ, Single CPH6 Features • • • Low ON-resistance 4V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage

Contextual Info: SBT150-06J Ordering number : ENN8352 SBT150-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C.

SBT150-06J

Abstract: SBT150
Contextual Info: SBT150-06J Ordering number : ENN8352 SBT150-06J Schottky Barrier Diode Twin Type • Cathode Common 60V, 15A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • • • • Tj=150°C.

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Tj=125°C, typ Applications Features Low VF Optimized for 3.3V 5V output application

YG803C06

Contextual Info: YG803C06R 15A Schottky barrier diode 60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

YG803C06

Abstract: application FULL WAVE RECTIFIER diode full wave rectifier 6 v
Contextual Info: YG803C06 15A Schottky barrier diode (60V / 15A ) Outline drawings, mm TO-220F Major characteristics Characteristics YG803C06 Units Condition VRRM VF 60 0.48 V V IO 15 A Applications Features Low VF Optimized for 3.3V 5V output application Center tap connection

Contextual Info: SCHOTTKY BARRIER DIODE 11EQS05 11EQS06 1.1A/50~60V FEATURES • Miniature Size MAX 'DIA 2.7 .106 , < ± ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0.60(.024) d ia 0.54C021) ° High Surge Capability ° 20 Volts thru 100 Volts Types Available

21DQ05

Abstract: 21DQ06 CVM60 t22.80
Contextual Info: SCHOTTKY BARRIER DIODE 21DQ05 21DQ06 1.9A/50— 60V FEATURES • Miniature Size • Low Forward Voltage Drop • Low Power L o s s , High Efficiency • High Surge Capability »20 Volts thru 100 Volts Types Available • 52mm Inside Tape Spacing Package Available

Contextual Info: SCHOTTKY BARRIER DIODE EC10QS05 EC10QS06 1.1A/50— 60V FEA TURES oMiniature Size, Surface Mount Device ° Low Forward Voltage Drop » Low Power Loss, High Efficiency ° High Surge Capability » 20 Volts thru 100 Volts Types Available °Packaged in 12mm Tape and Reel

DIODE j5.m

Contextual Info: SCHOTTKY BARRIER DIODE 4VQ05CT 4VQ06CT 4VQ05CTF 4VQ06CTF 4 .4 A /5 0 — 60V FEATURES ° TO-251AA Case 71 .264' 4l.25'2 '" 5 vQi 2 1 1 1 2 :;* m a \ i.n94> 2 3 S MAX i H 4t 12:1.00) M AX n 7 °TO-252AA Case, Surface Mount Device 6 2 2 I.24Ò) rt.i>{.035l

n fet 60v 3a

Abstract: 30v N channel MOS FET N channel MOS FET P Channel Low Gate Charge 100A 60v 6a diode
Contextual Info: SSG4575 N Channel 6A, 60V,R DS ON 36mΩ P Channel -4.2A, - 60V,R DS(ON) 72mΩ Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 45 The SSG4575 provide the designer with the best combination of fast switching,

GSS4575

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/06/06 REVISED DATE :2005/09/29B N-CH BVDSS 60V N-CH RDS ON 36m N-CH ID 6A P-CH BVDSS -60V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4575 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4575 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: AP4575GM-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D2 D2 ▼ Low On-resistance RDS ON 36mΩ ID P-CH BVDSS RDS(ON) ID 6A -60V 72mΩ -4.2A D1 D1 ▼ Fast Switching Performance

NB06HSA12

Abstract: TL113
Contextual Info: 6A Avg. •最大定格 120 Volts SBD NB06HSA12 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage V RRM 120 V 平 均 整 流 電 流 Average Rectified Forward Current

Contextual Info: SSM4575M COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement N-Ch D2 BV D2 Low on-resistance D1 D1 Fast switching performance SO-8 S1 G1 Description G2 S2 60V DSS R DS ON 36mΩ ID 6A -60V 72mΩ -4.2A P-Ch BV DSS RDS(ON)

9973

Contextual Info: Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9973J3 BVDSS ID RDSON 60V 14A 80mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

APF30324

Abstract: APF30205 APF30224 APF30212 DC-217 IEC 60947-5-1 APF3024H apf30312 APF10205 APF10206
Contextual Info: PF APF VDE Compliant with European standards 1a/1c 6A Slim power relays Compliance with RoHS Directive PF RELAYS (APF) FEATURES TYPICAL APPLICATIONS 1. High density mounting with 5 mm .197 inch width Space saved with 5 mm .197 inch slim type with 28 mm 1.102 inch length.

Contextual Info: PF APF VDE Compliant with European standards 1a/1c 6A Slim power relays RoHS compliant PF RELAYS (APF) FEATURES TYPICAL APPLICATIONS 1. High density mounting with 5 mm .197 inch width Space saved with 5 mm .197 inch slim type with 28 mm 1.102 inch length.