DIODE 6203 Search Results

Contextual Info: mu GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 O P TO ELEC TR O N IC PRODUCTS DIVISION * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 is a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to

Contextual Info: ma GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 OPTO ELE CT RON IC PRODUCTS D I VI SI O N * HIGH INTENSITY GaAIAs VERSION AVAILABLE RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 ¡s a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to

Contextual Info: HICROPAC INDUSTRIES INC 45E D b i i s m o ooQOTaa s a dpi GaAs LIGHT-EMITTING DIODE 62033 TYPE GS 5040 * HIGH INTENSITY GaAIAs VERSION AVAILABLE •-T3W-U RECESSED TO-46 HEADER FOR PRECISE BEAM ALIGNMENT HIGH EFFICIENCY HERMETIC PACKAGE Mii 62033 is a P-N GaAs Infrared Light Emitting Diode in a lensed TO-46 package, and is spectrally matched to

Contextual Info: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03W L Ordering Code Pin Configuration Package Q62702-A1028

JN sod323

Abstract: JN sod-323
Contextual Info: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03V\ L Ordering Code Pin Configuration Package Q62702-A1028

Q62702-A1028

Abstract: 6203W diode bat 85
Contextual Info: BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 62-03W L Q62702-A1028 Pin Configuration Package 1=A SOD-323

diode RL 04

Contextual Info: BAT 62-03W Silicon Schottky Diode 2
Low barrier diode for detectors up to GHz 1 frequencies VPS05176 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration BAT 62-03W L 1=C Package 2=A SOD-323 Maximum Ratings

Contextual Info: 62033 TO-46 LIGHT EMITTING DIODE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 06/30/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package Touch screen arrays Reflective sensors Position sensors Level sensors

Contextual Info: 62033 TO-46 LIGHT EMITTING DIODE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 06/30/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package Touch screen arrays Reflective sensors Position sensors Level sensors

Contextual Info: 62038 GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 08/18/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package End-of-tape indicators Reflective sensors Card readers

Contextual Info: 62033 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE TYPE GS5040 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION Touch screen arrays

TO46 package

Abstract: GS5040-3 GS5040-1 GS5040-2
Contextual Info: 62033 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE TYPE GS5040 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION Touch screen arrays

Contextual Info: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION

TIL31B

Abstract: IR TIL31B TO46 package TIL33B
Contextual Info: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION

Contextual Info: ma 62038 GaAs INFRARED LIGHT-EMITTING DIODE OPTOELECTRONIC PRODUCTS DIVISION REPLACES TIL 33B GENERAL DESCRIPTION The 62038 is designed to emit near-infrared radiation when forward biased. The output is spectrally compatible with silicon sensors and is a pin compatible replacement for the TIL33B. The 62038 is hermetically sealed and utilizes a flat lense. A coin­

TSHA620

Abstract: TSHA6202 TSHA520 TSHA6200 TSHA6201 TSHA6203
Contextual Info: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

tube 6203

Abstract: GL-6203 diode 6203 GL620 rs tube DIODE E91 general electric
Contextual Info: E T -T 1 0 2 6 DESCRIPTION AND RATING TWIN DIODE GL-6203 FIVE-STAR TUBE ★ ★ ★ ★ ★ The GL-6203 is a miniature full-wave high-vacuum rectifier intended for use in power supplies of a-c and storage-battery-operated equipment. The tube is specially designed to assure dependable life and reliable service under the exacting conditions

Contextual Info: TSHA620. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA620. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

circuit sc 6200

Abstract: DS-02-V
Contextual Info: NJU7261 Series C-MOS STEP-UP SWITCHING REGULATOR • GENERAL DESCRIPTION ■ PRELIM INARY PACKAGE OUTLINE The NJU7261 series is a C-MOS step-up switching regulator which contains accurate voltage reference, error amplifier, CR osciIlator, control circuit, switching transistor, diode

Contextual Info: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability

TIL31

Contextual Info: mu 62038 GaAs INFRARED LIGHT-EMITTING DIODE O P TO E LE C TR O N IC PRODUCTS D IV IS IO N REPLACES TIL 33B GENERAL DESCRIPTION The 62038 is designed to emit near-infrared radiation when forward biased. The output is spectrally compatible with silicon sensors and is a pin compatible replacement for the TIL33B. The 62038 is hermetically sealed and utilizes a flat lense. A coin­